Portal de Transparencia

Actividad investigadora:

• Artículos en revistas
  • [2019] (S)TEM methods contributions to improve the fabrication of InGaN thin films on Si, and InN nanostructures on flat Si and rough InGaN
  • [2019] Electron Tomography of Pencil-Shaped GaN/(In,Ga)N Core-Shell Nanowires
  • [2019] Unravelling the polarity of InN quantum dots using a modified approach of negative-spherical-aberration imaging
  • [2018] Effective Refractive-Index Approximation: A Link between Structural and Optical Disorder of Planar Resonant Optical Structures
  • [2018] Formation mechanisms of single-crystalline InN quantum dots fabricated via droplet epitaxy
  • [2018] Unvealing GaN Polytypism in Distributed GaN/InAlN Bragg Reflectors Through HRTEM Image Simulation
  • [2017] Emission of Linearly Polarized Single Photons from Quantum Dots Contained in Nonpolar, Semipolar, and Polar Sections of Pencil-Like InGaN/GaN Nanowires
  • [2017] Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
  • [2016] A top-gate GaN nanowire metal-semiconductor field effect transistor with improved channel electrostatic control
  • [2016] Impact of alloyed capping layers on the performance of In As quantum dot solar cells
  • [2016] Influence of composition, strain, and electric field anisotropy on different emission colors and recombination dynamics from InGaN nanodisks in pencil-like GaN nanowires
  • [2016] Influence of composition, strain, and electric field anisotropy on different emission colors and recombination dynamics from InGaN nanodisks in pencil-like GaN nanowires
  • [2016] Quantitative parameters for the examination of InGaN QW multilayers by low-loss EELS
  • [2016] Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
  • [2016] Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
  • [2016] Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
  • [2016] Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
  • [2015] Blue-to-green single photons from InGaN/GaN dot-in-a-nanowire ordered arrays
  • [2015] Crystallographically uniform arrays of ordered (In)GaN nanocolumns
  • [2015] Dynamic control of the optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves
  • [2015] Formation Mechanisms of GaN Nanowires Grown by Selective Area Growth Homoepitaxy
  • [2015] Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters
  • [2015] Stacked GaAs(Sb)(N)-capped InAs/GaAs quantum dots for enhanced solar cell efficiency
  • [2014] Analysis of InAl(Ga)N/GaN wet-etching by structural, morphological and electrical methods
  • [2013] A comprehensive diagram to grow (0001)InGaN alloys by molecular beam epitaxy
  • [2013] A comprehensive diagram to grow (0001)InGaN alloys by molecular beam epitaxy
  • [2013] Insight into high-reflectivity AlN/GaN Bragg reflectors with spontaneously formed (Al,Ga)N transient layers at the interfaces
  • [2013] Insight into high-reflectivity AlN/GaN Bragg reflectors with spontaneously formed (Al,Ga)N transient layers at the interfaces
  • [2013] Insight into the Compositional and Structural Nano Features of AlN/GaN DBRs by EELS-HAADF
  • [2013] Insight into the Compositional and Structural Nano Features of AlN/GaN DBRs by EELS-HAADF
  • [2013] Q-factor of (In,Ga)N containing III-nitride microcavity grown by multiple deposition techniques
  • [2013] Q-factor of (In,Ga)N containing III-nitride microcavity grown by multiple deposition techniques
  • [2013] Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures
  • [2013] Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures
  • [2012] A comprehensive diagram to grow metal-polarity InGaN alloys by molecular beam epitaxy
  • [2012] Optoelectronic Properties of InAlN/GaN Distributed Bragg Reflector Heterostructure Examined by Valence
  • [2010] E. CALLEJA, M.A. SÁNCHEZ-GARCIA, P. LEFEBVRE, J.RISTIC, F. BARBAGINI, A. BENGOECHEA, Z. GACEVIC. "Los LEDs también iluminarán las ciudades" Revista UPM, 16, 11-15 (2010)
  • [2010] InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy
  • [2010] Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, D. HOSSEINI, S. ESTRADE, F. PEIRÓ, E. CALLEJA ''InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam Epitaxy'' Journal of Applied Physics, 108, 113117 (2010).
  • [2009] Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, E. CALLEJA, E. LUNA, A. TRAMPERT "Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma assisted molecular beam epitaxy" Physica status Solidi (c), 6, S2, S643-S645 (2009)
  • [2008] A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy
  • [2008] Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma-assisted Molecular Beam Epitaxy
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• Capítulos de libros
  • [2017] Ga(In)N nanowires grown by Molecular Beam Epitaxy: from quantum light sources to nano-transistors
  • [2017] The Impact of Alloyed Capping Layers on the Performance of InAs/GaAs Quantum Dot Solar Cells
• Conferencias invitadas en congresos
  • [2019] Ga(In)N nanowires grown by MBE: nanotransistors and quantum light emitters
  • [2015] Modified InAs/GaAs quantum dots for enhanced solar cell efficiency
  • [2015] Novel optoelectronics devices
  • [2015] Selective Area Growth of InGaN/GaN Nanocolumnar structures for Classical and Quantum Light Sources
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• Cursos, seminarios y tutoriales
  • [2019] Modelling and global optimization of MIR-THz quantum cascade lasers
  • [2017] Seminario del Ponente Dr. Nenad Vukmirovic: Simulation Insights into Electronic Properties of Organic Semiconductors
  • [2016] Curso impartido por el Dr. Zarko Gacevic en University of Belgrade
  • [2012] Zarko Gacevic.- "Constituent Blocks of III-Nitride Microcavities Grown by Molecular Beam Epitaxy"
  • [2010] ZARKO GACEVIC.- "Systematic study of internal quantum efficiency mechanism in III-nitride Quantum Dots". 22/01/2010 ISOM-ETSIT-UPM, Madrid (España)
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• Estancias y sabáticos recogidos en programas oficiales
  • [2017] Estancia breve de Nenad Vukmirovic.- Universidad de Belgrado, dentro del programa Erasmus+
  • [2017] Estancia, Erasmus, Master Thesis.- Sanja Djurdjic
  • [2017] Estancia, Erasmus, Master Thesis.- Sanja Djurdjic programa de movilidad Erasmus+ Mobility Agreement Staff Mobility for teaching.
  • [2016] Estancia del Dr. Zarko Gacevic en University of Belgrade
  • [2009] D. Zarko Gacevic "CEA-GRENOBLE, CEA/Grenoble, Department of Fundamental Research on Condensed Matter" Grenoble, France 2009 13 week/s
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• Ponencia en Congresos
  • [2017] Emission of linearly polarized single photons from quantum dots contained in nonpolar, semipolar and polar sections of pencil-Like InGaN/GaN Nanowires
  • [2017] Growth of self-assembled AIN nanowires on SiO2/Si substrates
  • [2016] Dynamic acoustic control of single photon emission from III-Nitride nanowire heterostructures
  • [2016] Fabrication on III-nitride dot-ín-a-wire single photon sources
  • [2016] Nonpolar, semipolar and polar III-nitride dot-in-a-wire sources of linearly polarized single photons
  • [2016] Photoelectrochemical properties of full composition InxGa1-xN/Si photoanodes
  • [2016] Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
  • [2016] Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
  • [2015] A two-color emitting ingan nanodisk as a site-controlled source of classical and quantum light
  • [2015] Formation Mechanisms of GaN nanowires grown by slective area growth homoepitaxy
  • [2015] GaAs(Sb)(N)-caped InAs/GaAs Quantum Dots for enhanced solar cell efficiency
  • [2015] InGaN-on-Si for solar water splitting: compact layers, nanowalls and nanocolumns
  • [2015] Stacked GaAs(Sb)(N)-capped InAs/GaAs quantum dots for enhanced solar cell effiiency
  • [2015] Type-I and Type-II InAs/GaAs Quantum Dot solar cells with a GaAsSb capping layer
  • [2015] Valence EELS analysis of multiple InGaN-QW structure for electronic properties
  • [2014] Stacked GaAsSbN-capped InAs/GaAs quantum dots for enhanced solar cell efficiency
  • [2014] XRD analysis of InGaN uniform layers grown on Si (111) without any buffer layers and on Sapphire
  • [2013] A Simple Method to Model Bragg Reflectors with Transient Layers Formed at the Interfaces
  • [2013] Electron Energy Loss Spectroscopy for the analysis of AlN/GaN interfaces in MBE grown distributed Bragg Reflectors
  • [2013] Insight into AlN/GaN Bragg reflectors with spontaneously formed AlGaN transient layers at the interfaces
  • [2013] Insight into AlN/GaN Bragg reflectors with spontaneously formed AlGaN transient layers at the interfaces
  • [2013] Localized emission from the apex of GaN/(In,Ga)N/GaN
  • [2013] Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on Si(111): from ultraviolet to infrared emission
  • [2013] Spectroscopy for the analysis of AlN/GaN interfaces in MBE grown distributed Bragg Reflectors
  • [2012] A comprehensive diagram to grow (0001) InGaN alloys by molecular beam epitaxy
  • [2012] AlN/GaN DBR layer low-loss EELS-HAADF compositional mapping
  • [2012] EELS-HAADF combination for characterization of a new AlN/GaN DBRs growth method
  • [2012] EELS-HAADF spectrum imaging for characterization of (AlGa)N multilayer heterostructures
  • [2012] Electrical and Surface Characterization of Wet-etched InAlN/AlN/GaN HEMTs
  • [2012] Electrical and surface characterization of wet-etched InAlN/AlN/GaN HEMTs
  • [2012] Hybrid MBE/MOVPE grown III-nitride microcavity
  • [2012] Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures
  • [2012] Structural characterization of wet-etched quaternary InAlGaN barrier HEMT structures
  • [2011] A. Eljarrat, Z. Gacevic, S. Fernández-Garrido, E. Calleja, C. Magén, S. Estradé, F. Peiró "Optical and structural properties of InAlN/GaN Bragg reflectors examined by transmission electron microscopy and electron energy loss spectroscopy"
  • [2011] Growth and characterization of InGaN/GaN quantum dots for violet/blue applications
  • [2011] Growth and characterization of InGaN/GaN quantum dots for violet/blue applications
  • [2011] Growth and characterization of InGaN/GaN quantum dots for violet/blue applications
  • [2011] InN/GaN heterojunction electrical behavior
  • [2011] J.M. Ulloa, M. Montes, K. Yamamoto, Z. Gacevic, A. Guzmán, A. Hierro, M. Bozkurt, P.M.Koenraad, D. Fernández, D. González and D. Sales "Tuning the size, strain and band offsets of InAs/GaAs quantum dots through a thin GaAs(Sb)(N) capping layer"
  • [2011] Optical and structural properties of InAlN/GaN Bragg reflectors examined by transmission electron microscopy and electron energy loss spectroscopy
  • [2011] STEM-HAADF-EELS and HRTEM assessment of cubic-hexagonal transitions and In-enrichment in InAlN/GaN Bragg reflectors grown by plasma-assisted Molecular Beam Epitaxy
  • [2011] Structural properties of InAlN single layers nearly latice-matched to GaN grown by plasma assisted molecular beal epitaxy
  • [2011] Structural properties of InAlN single layers nearly latice-matched to GaN grown by plasma assisted molecular beal epitaxy
  • [2011] Tomography of multilayered materials for optoelectronic applications
  • [2011] Transmission Electron Microscopy and Electron Energy Loss Spectroscopy investigations of InAlN/GaN Bragg reflectors grown by plasma-assisted Molecular Beam Epitaxy
  • [2011] Transmission Electron Microscopy and Electron Energy Loss Spectroscopy investigations of InAlN/GaN Bragg reflectors grown by plasma-assisted Molecular Beam Epitaxy
  • [2011] Z. Gacevic, P. Lefebvre, F. Bertram, G. Schmidt, P. Veit, J. Christen, and E. Calleja "Growth and characterization of InGaN/GaN quantum dots for violet/blue applications"
  • [2011] Z. Gacevic, S. Fernández-Garrido, E. Calleja, D. Hosseini, S. Estrade and F. Peiró "Structural properties of InAlN single layers nearly latice-matched to GaN grown by plasma assisted molecular beal epitaxy"
  • [2009] S. FERNANDEZ-GARRIDO, Z. GACEVIC, E. CALLEJA, A. REDONDO-CUBERO, R. GAGO, E.MUÑOZ "A Comprehensive Diagram to Grow Inaln Alloys By Plasma-Assisted Molecular Beam Epitaxy" 15th European Molecular Beam Epitaxy Workshop Zakopane (Poland), 2009
  • [2009] Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, E. CALLEJA "Current status and further challenge in MBE growth of lattice-matched InAlN/GaN Bragg reflectors" 8th International Conference on Nitride Semiconductors Jeju (Korea), 2009
  • [2009] Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, E. CALLEJA "New approach to grow high reflectivity Al(Ga)N bragg reflectors by plasma-assited molecular beam epitaxy" 8th International Conference on Nitride Semiconductors Jeju (Korea), 2009
  • [2009] Z. GACEVIC, S. FERNÁNDEZ-GARRIDO, E. CALLEJA, E.LUNA, A. TRAMPERT "Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma assisted molecular beam epitaxy" 15th European Molecular Beam Epitaxy Workshop Zakopane (Poland), 2009
  • [2008] A diagram to grow InAlN layers on (0001)GaN by plasma-assisted molecular beam epitaxy International workshop on nitrides Semiconductors 2008, 6-10 de Octubre 2008 Montreux, (Suiza), 2008
  • [2008] Growth and characterization of lattice-matched InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy International workshop on nitrides Semiconductors 2008, 6-10 de Octubre 2008. Conferences Proceedings. Montreux, (Suiza), 2008
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• Premios
  • [2016] Thin GaAsSb capping layers for im-proved performance of InAs/GaAs quantum dot solar cells
  • [2013] Premio Extraordinario de Doctorado (curso 2011-2012)
• Proyectos de I+D+i
  • [2019] GANQUBIT: Nanohilos basados en GaN para sistemas de información cuántica y circuitos digitales
  • [2012] GECCO: 3D GaN for High Efficiency Solid State Lighting
  • [2011] Células solares de InGaN mejoradas con plasmones superficiales y fabricadas por MBE sobre sustratos de Silicio y capas de GaN (SPINSOL)
  • [2008] Desarrollo de Micro y Nanocavidades incluyendo regiones activas de Puntos Cuánticos de Nitruros-III: Aplicaciones a emisores de luz en azul y UV (QUADONIC)
  • [2008] Fabricación de substratos nanoestructurados de SiO2 para crecimiento epitaxial de emisores eficientes de Luz Blanca con Nitruros del Grupo-III
  • [2008] Nanoestructuras de semiconductores como componentes para la información cuántica
  • [2007] "Nanoestructuras de Semiconductores como Componentes para la Información Cuántica (NANIC)" Min. Educación y Ciencia, Acción Estratégica en Nanotecnología. NAN2004-09109-C04-02. (2005-2008).
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• Responsabilidades
  • [2016] Responsable de sala y equipo Rayos X
  • [2016] Responsables sala de Epitaxia MBE I y II
• Tesis Doctorales
  • [2017] InxGa1-xN layers, nanowires, and nanodots on Silicon for clean energy applications
  • [2016] Investigations on III-Nitrides nanostructures: application to Renewable Energies and Bio-Sensing
  • [2012] Bloques constituyentes de microcavidades planares de nitruros-III crecidos por epitaxia de haces moleculares