Portal de Transparencia

Actividad investigadora:

• Artículos en revistas
  • [2018] Laterally Biased Quantum-Well Infrared Photodetectors Operating at Room Temperature With Low Dark Currents
  • [2018] Size and shape tunability of self-assembled InAs/GaAs nanostructures through the capping rate
  • [2018] Type-II GaAsSb/GaAsN superlattice solar cells
  • [2018] Type-II GaAsSb/GaAsN superlattice solar cells
  • [2017] Laterally biased structures for room temperature operation of quantum-well infrared photodetectors
  • [2017] Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process
  • [2017] Scanning tunneling spectroscopic monitoring of surface states role on water passivation of InGaAs uncapped quantum dots
  • [2017] Strain-balanced type-II superlattices for efficient multi-junction solar cells
  • [2017] Strain-balanced type-II superlattices for efficient multi-junction solar cells
  • [2017] Strain-balanced type-II superlattices for efficient multi-junction solar cells
  • [2016] General route for the decomposition of InAs quantum dots during the capping process
  • [2016] Influence of Sb/N contents during the capping process on the morphology of InAs/GaAs quantum dots
  • [2016] Mixed Effects of the Atomic Arrangement and Surface Chemistry on the Electrodeposition of Bi Thin Films on n-GaAs Substrates
  • [2016] Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
  • [2015] Effect of annealing in the Sb and In distribution of type II GaAsSb-capped InAs quantum dots
  • [2015] High sensitivity to environment of InGaAs surface nanostructures
  • [2015] Role of the wetting layer in the enhanced responsivity of InAs/GaAsSb quantum dot infrared photodetectors
  • [2015] Stacked GaAs(Sb)(N)-capped InAs/GaAs quantum dots for enhanced solar cell efficiency
  • [2015] Type II InAs/GaAsSb quantum dots: Highly tunable exciton geometry and topology
  • [2014] Photoexcited-induced sensitivity of InGaAs surface QDs to environment
  • [2014] Strong Influence of the Humidity on the Electrical Properties of InGaAs Surface Quantum Dots
  • [2013] Dependence of Surface InGaAs Quantum Dot Luminescence on the Molecular Properties of the Environment
  • [2013] Dependence of Surface InGaAs Quantum Dot Luminescence on the Molecular Properties of the Environment
  • [2013] Electrical characterization of Schottky contacts to n-MgZnO films
  • [2013] Electrical characterization of Schottky contacts to n-MgZnO films
  • [2013] Impact of the Sb content on the performance of GaAsSb-capped InAs/GaAs quantum dot lasers
  • [2013] Impact of the Sb content on the performance of GaAsSb-capped InAs/GaAs quantum dot lasers
  • [2012] Critical Role of Two-Dimensional Island-Mediated Growth on the Formation of Semiconductor Heterointerfaces
  • [2012] High optical sensitivity to ambient conditions of uncapped InGaAs surface quantum dots
  • [2012] Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots
  • [2012] Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer
  • [2012] Kinetic Monte Carlo simulations and cross-sectional scanning tunneling microscopy as tools to investigate the heteroepitaxial capping of self-assembled quantum dots
  • [2012] PREPARING MECHANICAL ENGINEERING STUDENTS FOR PRODUCT DESIGN PROFESSIONAL PRACTICE THROUGH PBL: PLANNING AND EXECUTION OF THE SUBJECT "PRODUCT DESIGN METHODOLOGY"
  • [2011] Inhibition of In desorption in diluted nitride InAsN quantum dots
  • [2011] Metamorphic In0.20Ga0.80As p-i-n photodetectors grown on GaAs substrates for near infrared applications
  • [2011] Near Infrared InAs/GaAsSb Quantum Dot Light Emitting Diodes
  • [2011] Room temperature absorption in laterally biased Quantum Infrared Detectors fabricated by MBE regrowth
  • [2010] G. TABARES, A. HIERRO, J.M. ULLOA, A. GUZMAN, E. MUÑOZ, A. NAKAMURA, T. HAYASHI, J. TEMMYO "High responsivity and internal gain mechanisms in Au-ZnMgO Schottky photodiodes" Applied Physics Letters 96, 101112/1-101112/3, 2010.
  • [2010] J.M. ULLOA, R. GARGALLO-CABALLERO, M. BOZKURT, M. DEL MORAL, P. M. KOENRAAD, A. GUZMAN, A. HIERRO ''GaAsSb-capped InAs quantum dots: from enlarged quantum dot height to alloy fluctuations'' Physical Review B, 81, 165305 (2010)
  • [2010] M. MONTES, A. GUZMAN, A. TRAMPERT, A. HIERRO, "1.3 µm emitting GaInNAs/GaAs quantum well resonant cavity LEDs", Solid-State Electronics 54, 492-496, 2010.
  • [2010] M. MONTES, A. HIERRO, J. M ULLOA, J. MIGUEL-SÁNCHEZ, A. GUZMÁN, B. DAMILANO, M. HUGUES, M. AL KHALFIOUI, J.-Y. DUBOZ, J. MASSIES, "Current spreading efficiency and Fermi level pinning in GaInNAs/GaAs quantum well laser diodes" IEEE Journal of Quantum Electronics 46, 1058-1065, 2010.
  • [2010] M. MONTES, A. HIERRO, J. M. ULLOA, A. GUZMÁN, M. AL KHALFIOUI, M. HUGUES, B. DAMILANO, J. MASSIES "External efficiency and carrier loss mechanisms in InAs/GaInNAs quantum dot light emitting diodes". Journal of Applied Physics 108, 033104/1-033104/8, 2010.
  • [2009] A. GUZMÁN, E. LUNA, F. ISHIKAWA, A. TRAMPERT "The role of Sb and N ions on the morphology and localization of (Ga,In) (N,As) quantum wells" Journal of Crystal Growth, 311, 1728-1732 (2009)
  • [2009] M. MONTES, A. HIERRO, J. M. ULLOA, A. GUZMÁN, M. AL KHALFIOUI, M. HUGUES, B. DAMILANO, J. MASSIES "Electroluminescence analysis of 1.3-1.5 µm InAs quantum dot LEDs with (Ga,In)(N,As) capping layers" Physical Status Solidi (c), 6, 6, 1424-1427 (2009)
  • [2009] R. GARGALLO-CABALLERO, Á.GUZMÁN, M. HOPKINSON, J. M. ULLOA, A. HIERRO, E. CALLEJA "Dependence of N incorporation into (Ga)InAsN QDs on Ga content probed by rapid thermal annealing" Physica status solidi (c), 6,6, 1441-1444 (2009)
  • [2008] Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes
  • [2008] Impact of carrier localization on the photoluminescence characteristics of (Ga,In)(N,As) and (Ga,In)(N,As,Sb) quantum wells
  • [2008] Local vibration modes and nitrogen incorporation in AlGaAs: N layers
  • [2008] Resonant Raman study of local vibrational modes in AlGaAsN layers
  • [2008] Resonant Raman-active localized vibrational modes in AlyGa{1-y}NxAs{1-x} alloys: Experiment and firstprinciples calculations
  • [2008] The effect of rapid thermal annealing on the photoluminescence of InAsN/InGaAs dot-in-a-well structures
  • [2008] The effect of the individual species of the N plasma on the characteristics of InAsN quantum dots grown by MBE
  • [2008] Vertical composition fluctuations in (Ga,In)(N,As) quantum wells grown on vicinal (1 1 1)B GaAs
  • [2007] J. MIGUEL-SÁNCHEZ, A. GUZMÁN, U. JAHN, A. TRAMPERT, J. M. ULLOA, E. MUÑOZ, A. HIERRO "Role of ionized nitrogen species in the optical and structural properties of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy"Journal of Applied Physics, 101,1035261-10352616 (2007) ISSN: 0021-8979
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• Capítulos de libros
  • [2017] The Impact of Alloyed Capping Layers on the Performance of InAs/GaAs Quantum Dot Solar Cells
  • [2008] Impact of Nitrogen Ion Density on the Optical and Structural Properties of MBE Growh GaInAs/GaAs (100) and (111)B Quantum Wells
  • [2008] Photo- and Electro-luminescence from GaInNAs/GaAs single quantum wells and light emitting diodes
  • [2007] A. HIERRO, J.M. ULLOA, J. MIGUEL-SÁNCHEZ, A. GUZMÁN, A. TRAMPERT, E. TOURNIE "Photo- and Electro-luminescence from GaInNAs/GaAs single quantum wells and light emitting diodes" Nitrides and Dilute Nitrides: Growth, Physics and Devices 2007, 77-98. ISBN 978-81-7895-250-5.
  • [2007] A. HIERRO, J.M. ULLOA, J. MIGUEL-SÁNCHEZ, A. GUZMÁN, A. TRAMPERT, E. TOURNIE "Photo- and Electro-luminescence from GaInNAs/GaAs single quantum wells and light emitting diodes" Nitrides and Dilute Nitrides: Growth, Physics and Devices 2007, 77-98. ISBN 978-81-7895-250-5.
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• Conferencias invitadas en congresos
  • [2017] High temperature photoresponse of double Quantum-Well Infrared Photodetectors using laterally biased structures
  • [2017] Strain-balanced type-II superlattices for efficient multi-junction solar cells
  • [2015] High sensitivity to environment of InGaAs surface nanostructures
  • [2015] High sensitivity to environment of InGaAs surface nanostructures
  • [2015] Modified InAs/GaAs quantum dots for enhanced solar cell efficiency
  • [2013] GaAsSb(N)-capped InAs quantum dots: from atomic scale characterization to improved devices
  • [2011] New approaches for room temperatura operation of quantum infrared photodetectors
  • [2008] Multicolor absorption using Quantum Well Infrared Photodetectors based on dilute nitrides
  • [2007] Á. Guzmán, E. Luna, J. Hernando, E. Muñoz "Quantum Well Infrared Photodetectors (QWIP), Basics and current activities at UPM University" 19th NATO/RTO Sensors and Electronics Technology Panel Business Meeting Toledo (España) 9 al 9 de octubre de 2007.
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• Cursos, seminarios y tutoriales
  • [2015] Surface InGaAs nanostructures for sensing applications
  • [2014] Future of multifunctional nanocrystalline ZnO
  • [2011] Optoelectronic devices based on oxide and arsenide compound semiconductors. Dr. Kenji Yamamoto
  • [2011] Spectroscopy of droplet epitaxial GaAs nanoemitters, Dr Marco Abbarchi
  • [2010] Professor MUTSUKO HATANO.- Tutorial de colaboración con Dr. Kenji Yamamoto
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• Estancias y sabáticos recogidos en programas oficiales
  • [2016] Estancia del Dr. Alvaro de Guzmán Fernández González
  • [2012] ESTANCIA INVESTIGADORA DEL PROF. ALVARO DE GUZMAN FERNANDEZ GONZÁLEZ.- Estudio mediante catodoluminiscencia de muestras de puntos cuánticos superficiales.
  • [2012] Estudio mediante catodoluminiscencia de muestras de puntos cuánticos superficiales.
  • [2008] ESTANCIA DEL DR. JOSE MARÍA ULLOA HERRERO, CENTRO: Technical University Eindhoven LOCALIDAD: Eindhoven PAÍS: Países Bajos AÑO: 2008 DURACIÓN: 5 meses TEMA: Estudio de las propiedades estructurales de nanostructuras semiconductoras cero-dimensionales
  • [2007] Estancia de la Doctorando Doña Raquel Gargallo Caballero, en la University of Sheffield, Department of Electronic and Electrical Engineering, III/V Facility of the EPSRC National Center for III-V Technologies, Sheffield (Reino Unido), para Crecimiento mediante Epitaxia por Haces Moleculares (MBE) de nanoestructuras de punto cuántico para su aplicación en detectores de infrarrojo, duración de la estancia 3 meses del 29/05/2007 al 31/08/2007.
  • [2007] Estancia del Profesor Titular de Universidad, Dr. D. ALVARO DE GUZMÁN FERNÁNDEZ GONZÁLEZ Octubre de 2007: estancia durante 6 meses en el Paul Drude Institut (PDI) de Berlín. Motivo: Crecimiento por MBE de aleaciones de InGaAsN con antimonio (Sb).
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• Otras Publicaciones
  • [2016] Analysis of capping with GaAsSbN thin layers in (un)coupled InAs/GaAs multi quantum dot layers for enhanced solar cells
  • [2016] Analysis of the Sb and N distribution in GaAsSb/GaAsN superlattices for solar cell applications
• Otros méritos
  • [2015] M.J. Milla, I. Hernández, J. Mendez, Jorge M. Garcia and A. Guzmán, ''Best poster contribution (Role of Surface States on the Sensing Properties of In0.5Ga0.5As Surface Quantum Dots)'', 18th European Molecular Beam Epitaxy Workshop, Canazei (Italy) March 15-18 2015.
• Ponencia en Congresos
  • [2018] Interplay between carrier lifetime, electronic coupling, and extraction efficency
  • [2018] QWIP structures with lateral bias : An alternative approach to achieve high-temperature operation
  • [2018] Type-II GaAsSb/GaAsN superlattice solar cells
  • [2017] High temperature photoresponse of double Quantum-Well Infrared Photodetectors using laterally biased structures
  • [2017] Strain-balanced type-II GaAsSb/GaAsN superlattices for efficient multi-junction solar cells
  • [2016] Analysis of capping with GaAsSbN thin layers in (un)coupled InAs/GaAs multi quantum dot layers for enhanced solar cells
  • [2016] Analysis of capping with GaAsSbN thin layers in (un)coupled InAs/GaAs multi quantum dot layers for enhanced solar cells
  • [2016] Analysis of the Sb and N distribution in GaAsSb/GaAsN superlattices for solar cell applications
  • [2016] Analysis of the Sb and N distribution in GaAsSb/GaAsN superlattices for solar cell applications
  • [2016] Análisis de la interdifusión en superredes de GaNAsSb para aplicaciones en celdas solares de multiunión
  • [2016] Role of the wetting layer in the performance of quantum dot solar cells
  • [2016] Role of the wetting layer in the performance of quantum dot solar cells
  • [2016] Room Temperature Operation of Laterally Biased Quantum Well Infrared Photodetectors
  • [2016] Strain-balanced GaAsSb-GaAsN Type-II superlattices as 1 eV layer for efficient multi-junction solar cells
  • [2016] Strain-balanced Type-II GaAsSb/GaAsN Superlattices as 1 eV layer for Efficient Multi-junction Solar Cells
  • [2016] Strain-balanced Type-II GaAsSb/GaAsN Superlattices as 1 eV layer for Efficient Multi-junction Solar Cells
  • [2016] Strain-balanced Type-II GaAsSb/GaAsN Superlattices for Efficient Multi-junction Solar Cells
  • [2016] Strain-balanced Type-II GaAsSb/GaAsN Superlattices for Efficient Multi-junction Solar Cells
  • [2015] Analysis of Sb and In distribution in GaAsSb-capped InAs quantum dots by advance transmission electron microscopy
  • [2015] Capping layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots
  • [2015] GaAs(Sb)(N)-caped InAs/GaAs Quantum Dots for enhanced solar cell efficiency
  • [2015] Role of surface states on the sensing properties of In0.5Ga0.5As surface quantum dots
  • [2015] Stacked GaAs(Sb)(N)-capped InAs/GaAs quantum dots for enhanced solar cell effiiency
  • [2015] Type-I and Type-II InAs/GaAs Quantum Dot solar cells with a GaAsSb capping layer
  • [2014] Stacked GaAsSbN-capped InAs/GaAs quantum dots for enhanced solar cell efficiency
  • [2013] High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing
  • [2013] High performance environment sensors based on InGaAs surface Quantum Dots.
  • [2013] Impact of a thin GaAsSb capping layer on the lasing characteristics of InAs/GaAs quantum dot lasers
  • [2013] Nitride 2DEG-based devices for UV photodetection
  • [2013] Nitride 2DEG-based devices for UV photodetection
  • [2013] Room temperature luminescence beyond 1.3 ìm from GaAsSbN-capped InAs quantum dots
  • [2013] Room temperature luminescence beyond 1.3 ìm from GaAsSbN-capped InAs quantum dots
  • [2012] Broad band structure tunability of InAs/GaAs quantum dots with a thin GaAsSbN capping layer
  • [2012] Impact of N on the structural properties of GaAsSbN-capped InAs QDs studied by advanced transmission electron microscopy techniques
  • [2012] Impact of the environment on the optical emission of InGaAs surface quantum dots
  • [2012] Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer
  • [2012] Self-limited interface width of MBE-grown semiconductor heterointerfaces
  • [2011] Absorption analysis of GaAsSb-capped InAs/GaAs quantum-dot infrared photodetectors
  • [2011] Analysis of the modified optical properties of GaAs1-xSbx-capped InAs/GaAs quantum dots
  • [2011] Comparison of interface properties in two-dimensional heterostructures grown layer-by-layer or by step flow
  • [2011] Evaluation of the In desorption during the capped process in diluted nitride In(Ga)As quantum dots
  • [2011] Gas sensor based on room temperature optical properties of Surface QDs
  • [2011] MBE growth approaches for improving Sb-based In0.5Ga0.5As(Sb)/GaAs QDs
  • [2011] Mid-infrared photodetectors based on GaAsSb-capped InAs quantum dots
  • [2011] Modified optical properties of GaAs(Sb)(N)-capped InAs/GaAs quantum dots
  • [2011] Oxide based UV photodetection using schottky photodiodes
  • [2011] Room temperature photoluminescence of InGaAs Surface Quantum Dots
  • [2011] Size, strain, and band offset engineering in GaAs(Sb)(N)-capped InAs quantum dots for 1.3 - 1.55 µm LEDs and LDs
  • [2011] Synthesis and characterization of GaAsSb-capped InAs-based QDIPs
  • [2011] Tuning the size, strain and band offsets of InAs/GaAs quantum dots through a thin GaAs(Sb)(N) capping layer
  • [2010] A.GUZMÁN FERNÁNDEZ, R. GARGALLO-CABLLERO, MJ. MILLA, JM. ULLOA, A. HIERRO "Low optical degradation in InGaAsN/GaAs Quantum Dot p-i-n structures emitting from 1.1 to 1.55 µm" 16th International MBE Conference Berlín (German), 2010
  • [2010] A.GUZMÁN FERNÁNDEZ, R. SAN-ROMÁN, A.HIERRO "Laterally biased double quantum well IR detector fabricated by MBE regrowth". 6th International Conference on Molecular Beam Epitaxy Berlín (Germany), 2010
  • [2010] D.F. REYES, D.L. SALES, R. GARGALLO-CABALLERO, J.M.ULLOA, A. HIERRO, A. GUZMÁN, D. GONZÁLEZ "Efecto de la incorporación de nitrógeno en puntos cuánticos enterrados de in In(Ga)As crecidos sobre GaAs" Congreso Nacional de Materiales, Zaragoza (Spain), 2010
  • [2010] D.F. REYES, D.L. SALES, R. GARGALLO-CABALLERO, J.M.ULLOA, A. HIERRO, A. GUZMÁN, D. GONZÁLEZ. "Effects of the nitrogen incorporation in the optical and structural characteristics of nitrogen-dilute InAsN QDs" European Materials Research Society Spring Meeting 2010 Strasbourg (France), 2010
  • [2010] J. M. ULLOA, M. DEL MORAL, M. BOZKURT, R. GARGALLO-CABALLERO, A. GUZMÁN, P. M. KOENRAAD, A. HIERRO "GaAsSb-capped InAs quantum dots: from enlarged quantum dot height to alloy fluctuations" Internacional Quantum Dot Conference 2010. Nottinghan (UK), 2010
  • [2010] J.M. ULLOA, R. GARGALLO-CABALLERO, A. GUZMÁN, A. HIERRO . "GaAsSbN-capped InAs quantum dots for 1.3 - 1.55 µm emission" European Materials Research Society Spring Meeting 2010. Strasbourg (France), 2010
  • [2009] J.M. ULLOA, M. DEL MORAL, R. GARGALLO, M. MONTES, A. GUZMAN, A. HIERRO, M. BOZKURT, P.M. KOENRAAD "1.3- 1.5 nm GaAsSb-capped InAs quantum dots: effect of the Sb content on the structural and optical properties" Spring European Materials Research Society Conference 2009 Strasburg (France), 2009
  • [2009] J.M. ULLOA, M. DEL MORAL, R. GARGALLO, M. MONTES, A. GUZMAN, A. HIERRO, M. BOZKURT, P.M. KOENRAAD "1.3- 1.5 µm GaAsSb-capped InAs quantum dots: effect of the Sb content on the structural and optical properties" 15th European Molacular Beam Epitaxy Workshop Zakopane (Poland), 2009
  • [2009] M. MONTES, A. HIERRO, J. M. ULLOA, A. GUZMÁN, M. AL KHALFIOUI, M. HUGUES, B. DAMILANO, J. MASSIES "1.3-1.5 µm emitting InAs quantum dot LEDs with (Ga, In)(N,As) and Ga(As,Sb) capping layers: a comparison" Spring European Materials Research Society Conference 2009 Strasburg (France), 2009
  • [2008] Electroluminescence analysis of 1.3-1.5 µm InAs quantum dot LEDs with (Ga,In)(N,As) capping layers 35th International Symposium on Compound Semiconductors (ISCS) Friburgo (Alemania), 2008
  • [2008] Enhancement of N incorporation into (Ga)InAsN quantum dots International Symposium on Compound Semiconductors (ISCS) Friburgo (Alemania), 2008
  • [2008] The effect of ions and Sb on the carrier localization in GaInNAs quantum wells 15th International Conference on Molecular Beam Epitaxy Vancouver (Canada), 2008
  • [2008] The influence of Ga composition of GaInAsN QDs on N incorporation.
  • [2008] The influence of the Ga content on the N incorporation in InAsN and GaInNAs Quantum Dots 7th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS), Les Arcenaulx, Marseille (Francia), 2008
  • [2007] E. Gallardo, S. Lazic, J. M. Calleja, J. Miguel-Sánchez, M. Montes, A. Hierro, R. Gargallo-Caballero, A. Guzmán, A.M. Teweldeberhan, S. Fahy "Local vibration modes and nitrogen incorporation in AlGaAs:N layers" 7th International Conference on Nitride Semiconductors (ICNS07) Las Vegas (Nevada, USA) 16 al 21 de septiembre de 2007
  • [2007] J. Miguel-Sánchez, M. Hopkinson, Á. Guzmán, R. Gargallo-Caballero, E. Muñoz. "(In)Gaas(N) On Gaas (100) And (111)B Grown In A Low Pressure N2 Environment" 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 de marzo de 2007
  • [2007] J. Miguel-Sánchez, M. Montes, A. Hierro, R. Gargallo-Caballero, A. Guzmán, E. Muñoz, S. Lazic, E. Gallardo, J. M. Calleja "Growth And Characterization Of Algaas(N) On Gaas" 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 de marzo de 2007
  • [2007] J. Miguel-Sánchez, M. Montes, A. Hierro, R. Gargallo-Caballero, A. Guzmán, E. Muñoz, S. Lazic, E. Gallardo, J. M. Calleja "Growth And Characterization Of Algaas(N) On Gaas" 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 de marzo de 2007
  • [2007] R. Gargallo-Caballero, A.Guzmán, J. Miguel-Sánchez, A. Hierro, E.Muñoz "Analysis Of Gain Spectra And Fermi Level Pinning Of Gainnas/Gaas Quantum Well Lasers With 0 To 3.3% N Content" European Materials Research Society Meeting (E-MRS) 2007 Estrasburgo (Francia) 28 de mayo al 1 Junio de 2007
  • [2007] R. Gargallo-Caballero, A.Guzmán, J. Miguel-Sánchez, A. Hierro, E.Muñoz. "Analysis of gain spectra and Fermi level pinning of GaInNAs/GaAs quantum well lasers with 0 to 3.3% N content" European Materials Research Society Meeting (E-MRS) 2007 Estrasburgo (Francia) 28 de mayo al 1 Junio de 2007
  • [2007] R. Gargallo-Caballero, J. Miguel-Sánchez, Á. Guzmán, A. Hierro, E. Muñoz. "Structural and optical study of InAsN quantum dots grown on GaAs(100) and buried with different materials" 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 de marzo de 2007
  • [2007] R. Gargallo-Caballero, M. Sanz, Á. Guzmán, E. Calleja, E. Muñoz "Quantum Dot Infrared Photodetector for mid-infrared detection at high temperatures"6th Spanish Conference on Electronic Devices CDE-07 El Escorial, Madrid (España) 31 de enero al 2 de febrero de 2007
  • [2007] R. Gargallo-Caballero, M. Sanz, Á. Guzmán, E. Calleja, E. Muñoz "Quantum Dot Infrared Photodetector for mid-infrared detection at high temperatures".6th Spanish Conference on Electronic Devices CDE-07 El Escorial, Madrid (España) 31 de enero al 2 de febrero de 2007
  • [2007] R. Gargallo-Caballero, M.Sanz, Á.Guzmán, E.Calleja, E.Muñoz "High Temperature Multiquantum Dot Infrared Photodetectors Using InAs Self-Assembled Quantum Dots" 6th Spanish Conference on Electronic Devices CDE-07. El Escorial, Madrid (España) 31 de enero al 2 de febrero de 2007
  • [2007] R. Gargallo-Caballero, Á.Guzmán, J. Miguel-Sánchez, A. Hierro. "Role Of N Plasma Species On The Morphology And Luminescence Of Inasn Quantum Dots Grown By Mbe" European Materials Research Society Meeting (E-MRS) 2007 Estrasbourg (Francia) 28 de mayo al 1 Junio de 2007
  • [2007] R. Gargallo-Caballero, Á.Guzmán, J. Miguel-Sánchez, A. Hierro. "Role Of N Plasma Species On The Morphology And Luminescence Of InAsN Quantum Dots Grown By Mbe" European Materials Research Society Meeting (E-MRS) 2007 Estrasbourg (Francia) 28 de mayo al 1 Junio de 2007
  • [2007] S. Lazić, E. Gallardo, J.M. Calleja, J. Miguel-Sánchez, M. Montes, A. Hierro, R. Gargallo-Caballero, A. Guzmán, E. Muñoz, A.M Teweldeberhan, S.Fahy "Resonant Raman study of local vibrational modes in AlxGa1-xAs1-yNy layers" 13th International Conference on Modulated Semiconductor Structures (MSS-13) Génova (Italia) 15 al 20 de julio de 2007
  • [2007] S. Lazic, E. Gallardo, J.M. Calleja, J. Miguel-Sánchez, M. Montes, A. Hierro, R. Gargallo-Caballero, A. Guzmán, E. Muñoz, A.M Teweldeberhan, S.Fahy "Resonant Raman study of local vibrational modes in AlxGa1-xAs1-yNy layers" 13th International Conference on Modulated Semiconductor Structures (MSS-13) Génova (Italia) 15 al 20 de julio de 2007
  • [2007] Á. Guzmán, E. Luna, J. Hernando, E. Muñoz "Quantum Well Infrared Photodetectors (QWIP), Basics and current activities at UPM University" 19th NATO/RTO Sensors and Electronics Technology Panel Business Meeting Toledo (España) 9 al 9 de octubre de 2007.
  • [2007] Á. Guzmán, F. Ishikawa, A. Trampert, K.H. Ploog "Effect Of Sb On The Optical Properties Of Gainnas And Gainnassb Quantum Wells Grown By Mbe" 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 de marzo de 2007
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• Premios
  • [2016] Strain-balanced GaAsSb-GaAsN type-II superlattices as 1eV layer for efficient multi-junction solar cells
  • [2016] Thin GaAsSb capping layers for im-proved performance of InAs/GaAs quantum dot solar cells
• Proyectos de I+D+i
  • [2016] NanoSb-GBSC: Nuevas nanoestructuras basadas en Sb para aplicaciones fotovoltaicas de alta eficiencia
  • [2015] FESEM: Extension de medida de catodoluminiscencia (cl) al rango infrarojo en microscopio de barrido electrónico FESEM
  • [2015] FESEM: Extensión de medida de catodoluminiscencia(CL) al rango infrarrojo en microcospio de barrido electrónico FESEM
  • [2015] NANODILNIT: Aleaciones emergentes de nitruros diluidos III-V y nanoestructuras relacionadas para aplicaciones fotovoltaicas y de fotodetección de alta eficiencia
  • [2015] Zoterac: Zinc Oxide For TeraHertz Cascade Devices
  • [2014] SISTEMA DE ATERRRIZAJE PARA AVIONES NO TRIPULADOS (SAPANT)
  • [2013] Laterally biased Quantum IR detectors
  • [2013] MBE REGROWTH OF A LATERALLY-BIASED DOUBLE QUANTUM WELL TUNABLE DETECTOR.
  • [2013] SISTEMA DE ATERRRIZAJE PARA AVIONES NO TRIPULADOS (SAPANT)
  • [2012] MBE REGROWTH OF A LATERALLY-BIASED DOUBLE QUANTUM WELL TUNABLE DETECTOR.
  • [2012] Sistema de Aterrizaje de precisión para aviones no tripulados (SAPANT)
  • [2012] Sistema de Aterrizaje de precisión para aviones no tripulados (SAPANT)
  • [2011] MBE REGROWTH OF A LATERALLY-BIASED DOUBLE QUANTUM WELL TUNABLE DETECTOR.
  • [2010] DESARROLLO MATRIZ DE DETECTORES MULTIESPECTRAL EN EL INFRARROJO 3-5
  • [2010] MBE REGROWTH OF A LATERALLY-BIASED DOUBLE QUANTUM WELL TUNABLE DETECTOR.
  • [2009] ASISTENCIA TECNICA PARA CONTRL Y CARACTERIZACIÓN DE LAS MATRICES DEL DEMOSTRADOR SIRIO.
  • [2009] ASISTENCIA TECNICA PARA LA OPTIMIZACION DE LA TENOLOGIA DE DETECTORES QWIP TRICOLOR PARA LA BANDA DE 3 A 5 MICRAS
  • [2009] Caracterización de la matriz de detectores qwip tricolor
  • [2009] DESARROLLO DE DETECTORES OWIP
  • [2009] DESARROLLO DE MATRICES DE DETECTORES QWIP TRICOLOR
  • [2009] DESARROLLO MATRIZ DE DETECTORES MULTIESPECTRAL EN EL INFRARROJO 3-5
  • [2009] MBE REGROWTH OF A LATERALLY-BIASED DOUBLE QUANTUM WELL TUNABLE DETECTOR.
  • [2008] 14th European Molecular Beam Epìtaxy. Acción complementaria TEC2007-30322-E/
  • [2008] Asistencia técnica para el control y caracterización de las matrices tricolor del demostrador SIRIO
  • [2008] Asistencia técnica para la optimización de la tecnología de detectores Qwip tricolor para la banda de 3 a 5 micras
  • [2008] Ayudas financieras para la mejora de las infraestructuras científicas y tecnológicas singulares y para el acceso a las mismas
  • [2008] Ayudas para apoyar las líneas de I+D en el programa de creación y consolidación de grupos de investigación de la UPM. (Resolución de 19 de junio de 2007)
  • [2008] Caracterización de la matriz de detectores QWIP Tricolor
  • [2008] Desarrollo de láseres horizontales y de cavidad vertical para la banda de 1.35 a 1.55 micras basados en pozos cuánticos de GaInNAs/GaAs
  • [2008] Desarrollo de matrices de detectores QWIP tri-color
  • [2008] Desarrollo matriz de detectores multiespectral en el infrarrojo 3-5
  • [2008] Nano y microdispositivos basados en ZnO para la detección de H2 y UV (THINKOXIDE)
  • [2008] Nanoestructuras de semiconductores como componentes para la información cuántica
  • [2008] Programa de infraestructura y gestión de calidad de la red de laboratorios incluido en el Contrato-Programa de I+D entre la CAM y la UPM
  • [2008] Programa de infraestructura y gestión de calidad de la red de laboratorios incluido en el Contrato-Programa de I+D entre la CAM y la UPM
  • [2007] "14th European Workshop on MBE, Sierra Nevada, Granada, ESPAÑA" Min. Educación y Ciencia, ACC-030000-2007-3 (2007)
  • [2007] "14th European Workshop on MBE, Sierra Nevada, Granada, ESPAÑA" Ministerio de Educación y Ciencia.TEC2007-30322-E/ (2007)
  • [2007] "14th European Workshop on MBE, Sierra Nevada, Granada, ESPAÑA.ISOM-UPM
  • [2007] "Asistencia técnica para el control y caracterización de las matrices tricolor del demostrador SIRIO"PROGRAMA DN8644: COINCIDENTE SIRIO (2006-2007. CIDA- Univ. Politécnica
  • [2007] "Ayudas para apoyar las líneas de I+D en el programa de creación y consolidación de grupos de investigación de la Universidad Politécnica de Madrid. CAM, Referencia: CCG07-UPM/000-3220"
  • [2007] "Desarrollo de láseres horizontales y de cavidad vertical para la banda de 1.35 a 1.55 micras basados en pozos cuánticos de GaInNAs/GaAs" Min. Educación y Ciencia, TEC2005-03694/MIC (2005-2008).
  • [2007] "Desarrollo matriz de detectores multiespectral en el infrarrojo 3-5 micras"FIT-330101-2007-11 (2007-2009)
  • [2007] "Microscopio de barrido de capacidad para caracterización de nanoestructuras". Min. Educación y Ciencia, UNPM06-33-037 (2007)
  • [2007] "Nanoestructuras de Semiconductores como Componentes para la Información Cuántica (NANIC)" Min. Educación y Ciencia, Acción Estratégica en Nanotecnología. NAN2004-09109-C04-02. (2005-2008).
  • [2007] "Nanoestructuras de Semiconductores como Componentes para la Información Cuántica (NANIC)" Min. Educación y Ciencia, Acción Estratégica en Nanotecnología. NAN2004-09109-C04-02. (2005-2008).
  • [2007] "Nanoestructuras de semiconductores como componentes para la información cuántica"(NANOCOMIC)
  • [2007] "Sistema de caracterización óptica avanzada multifuncional"
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• Responsabilidades
  • [2016] Responsables sala de Epitaxia MBE I y II
  • [2008] Profesor Álvaro de Guzmán Fernández González.- Miembro vocal del Comité Asesor Específico para la evaluación de las solicitudes de los programa de ayudas a la Formación del Personal Investigador del Gobierno Vasco dentro del área 5 (Física, Astronomía, Astrofísica y Electrónica) entre los años 2005-2008.
  • [2007] Alvaro de Guzmán Fernández González. Invitación del PDI, durante un semestre 2007-2008 para actividades de Asesoramiento e Investigación, crecimiento por MBE de aleaciones de InGaAsN con antimonio (Sb).
  • [2007] Álvaro de Guzmán Fernández González, Miembro del Comité Asesor para la concesión de Becas del Gobierno Vasco dentro del área 5 (Física) entre 2005-2007.
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• Tesis Doctorales
  • [2015] Surface InGaAs nanostructures for sensing applications
  • [2010] RAQUEL GARGALLO CABALLERO "Desarrollo de dispositivos optoelectrónicos mediante crecimiento por MBE y caracterización de nanoestructuras de punto cuántico basadas en (Ga,In)(As,N)". Director Alvaro de Guzmán Fernández, Sobresaliente cum laude.