Portal de Transparencia

Actividad investigadora:

• Artículos en revistas
  • [2019] Controllable and Highly Propagative Hybrid Surface Plasmon-Phonon Polariton in a CdZnO-Based Two-Interface System
  • [2019] Intersubband absorption at normal incidence by m-plane ZnO/MgZnO Quantum Wells
  • [2019] Observation of Intersubband Absorption in ZnO Coupled Quantum Wells
  • [2019] Optical Phase Transition in Semiconductor Quantum Metamaterials
  • [2019] Short infrared wavelength quantum cascade detectors based on non-polar ZnO/ZnMgO quantum wells
  • [2018] Breaking the Intersubband Selection Rules for Absorption with ZnO Quantum Wells: Light Polarization Sensitivity under Normal Incidence
  • [2018] Ga-doping of nonpolar m-plane ZnMgO with high Mg contents
  • [2018] GaAsN/GaAsSb superlattices as 1 eV layers for efficient multi-junction solar cells
  • [2018] Intersubband transitions and many body effects in ZnMgO/ZnO quantum wells
  • [2018] Multisubband Plasmons in Doped ZnO Quantum Wells
  • [2018] Rock-salt CdZnO as a transparent conductive oxide
  • [2018] Short infrared wavelength quantum cascade detectors based on m-plane ZnO/ZnMgO quantum wells
  • [2018] Size and shape tunability of self-assembled InAs/GaAs nanostructures through the capping rate
  • [2018] Type-II GaAsSb/GaAsN superlattice solar cells
  • [2018] Type-II GaAsSb/GaAsN superlattice solar cells
  • [2017] Homoepitaxy of non-polar ZnO/(Zn,Mg)O multi-quantum wells: From a precise growth control to the observation of intersubband transitions
  • [2017] Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process
  • [2017] Strain-balanced type-II superlattices for efficient multi-junction solar cells
  • [2017] Strain-balanced type-II superlattices for efficient multi-junction solar cells
  • [2017] Strain-balanced type-II superlattices for efficient multi-junction solar cells
  • [2017] Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
  • [2016] General route for the decomposition of InAs quantum dots during the capping process
  • [2016] Impact of alloyed capping layers on the performance of In As quantum dot solar cells
  • [2016] Influence of Sb/N contents during the capping process on the morphology of InAs/GaAs quantum dots
  • [2016] Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
  • [2016] Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
  • [2016] Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
  • [2016] Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
  • [2015] Effect of annealing in the Sb and In distribution of type II GaAsSb-capped InAs quantum dots
  • [2015] Impact of Mg content on native point defects in MgxZn1-xO (0 <= x <= 0.56)
  • [2015] Native point defect energies, densities, and electrostatic repulsion across (Mg, Zn)O alloys
  • [2015] Optical properties of ZnMgO films grown by spray pyrolysis and their application to UV photodetection
  • [2015] Role of the wetting layer in the enhanced responsivity of InAs/GaAsSb quantum dot infrared photodetectors
  • [2015] Stacked GaAs(Sb)(N)-capped InAs/GaAs quantum dots for enhanced solar cell efficiency
  • [2015] Type II InAs/GaAsSb quantum dots: Highly tunable exciton geometry and topology
  • [2013] Electrical characterization of Schottky contacts to n-MgZnO films
  • [2013] Electrical characterization of Schottky contacts to n-MgZnO films
  • [2013] Impact of the Sb content on the performance of GaAsSb-capped InAs/GaAs quantum dot lasers
  • [2013] Impact of the Sb content on the performance of GaAsSb-capped InAs/GaAs quantum dot lasers
  • [2013] Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: Effect of thermal annealing
  • [2013] Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: Effect of thermal annealing
  • [2013] Self-assembled MgxZn1-xO quantum dots (0 <= x <= 1) on different substrates using spray pyrolysis methodology
  • [2013] Self-assembled MgxZn1-xO quantum dots (0 <= x <= 1) on different substrates using spray pyrolysis methodology
  • [2012] Analysis of the modified optical properties and band structure of GaAs1-xSbx-capped InAs/GaAs quantum dots
  • [2012] Analysis of the modified optical properties and band structure of GaAs12xSbx-capped InAs/GaAs quantum dots
  • [2012] Deep levels in a-plane, high Mg-content MgxZn1-xO epitaxial layers grown by molecular beam epitaxy
  • [2012] Deep levels in a-plane, high Mg-content MgxZn1-xO epitaxial layers grown by molecular beam epitaxy
  • [2012] High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing
  • [2012] High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing
  • [2012] Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots
  • [2012] Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots
  • [2012] Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots
  • [2012] Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer
  • [2012] Kinetic Monte Carlo simulations and cross-sectional scanning tunneling microscopy as tools to investigate the heteroepitaxial capping of self-assembled quantum dots
  • [2012] Self-assembled MgxZn1-xO quantum dots (0¡Ü x ¡Ü1) on different substrates using spray pyrolysis methodology
  • [2012] Single phase alpha-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents
  • [2011] Green Electroluminescence From ZnCdO Multiple Quantum-Well Light-Emitting Diodes Grown by Remote-Plasma-Enhanced Metal-Organic Chemical Vapor Deposition
  • [2011] Inhibition of In desorption in diluted nitride InAsN quantum dots
  • [2011] Metamorphic In0.20Ga0.80As p-i-n photodetectors grown on GaAs substrates for near infrared applications
  • [2011] Near Infrared InAs/GaAsSb Quantum Dot Light Emitting Diodes
  • [2011] Polarization-sensitive Schottky photodiodes based on a-plane ZnO/ZnMgO multiple quantum-wells
  • [2011] Room temperature absorption in laterally biased Quantum Infrared Detectors fabricated by MBE regrowth
  • [2011] Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional
  • [2010] A. NAKAMURA,T. HAYASHI , A.HIERRO, G.TABARES, J.M.ULLOA, E.MUÑOZ, J. TEMMYO, "Schottky barrier contacts formed on polar and nonpolar MgxZn1-xO films grown by remote plasma enhanced MOCVD" Phys. Status Solidi B 247, 1472-1475, 2010.
  • [2010] Current Spreading Efficiency and Fermi Level Pinning in GaInNAs-GaAs Quantum-Well Laser Diodes
  • [2010] External efficiency and carrier loss mechanisms in InAs/GaInNAs quantum dot light-emitting diodes
  • [2010] G. TABARES, A. HIERRO, J.M. ULLOA, A. GUZMAN, E. MUÑOZ, A. NAKAMURA, T. HAYASHI, J. TEMMYO "High responsivity and internal gain mechanisms in Au-ZnMgO Schottky photodiodes" Applied Physics Letters 96, 101112/1-101112/3, 2010.
  • [2010] High responsivity and internal gain mechanisms in Au-ZnMgO Schottky photodiodes
  • [2010] J.M. ULLOA, R. GARGALLO-CABALLERO, M. BOZKURT, M. DEL MORAL, P. M. KOENRAAD, A. GUZMAN, A. HIERRO ''GaAsSb-capped InAs quantum dots: from enlarged quantum dot height to alloy fluctuations'' Physical Review B, 81, 165305 (2010)
  • [2010] M. MONTES, A. GUZMAN, A. TRAMPERT, A. HIERRO, "1.3 µm emitting GaInNAs/GaAs quantum well resonant cavity LEDs", Solid-State Electronics 54, 492-496, 2010.
  • [2010] M. MONTES, A. HIERRO, J. M ULLOA, J. MIGUEL-SÁNCHEZ, A. GUZMÁN, B. DAMILANO, M. HUGUES, M. AL KHALFIOUI, J.-Y. DUBOZ, J. MASSIES, "Current spreading efficiency and Fermi level pinning in GaInNAs/GaAs quantum well laser diodes" IEEE Journal of Quantum Electronics 46, 1058-1065, 2010.
  • [2010] M. MONTES, A. HIERRO, J. M. ULLOA, A. GUZMÁN, M. AL KHALFIOUI, M. HUGUES, B. DAMILANO, J. MASSIES "External efficiency and carrier loss mechanisms in InAs/GaInNAs quantum dot light emitting diodes". Journal of Applied Physics 108, 033104/1-033104/8, 2010.
  • [2009] A.HIERRO, G. TABARES, J. M. ULLOA, E. MUÑOZ, A. NAKAMURA, T. HAYASHI, J. TEMMYO "Carrier compensation by deep levels in Zn1-xMgxO/sapphire" Applied Physics Letters, 94, 232101-1, 232101-3 (2009)
  • [2009] M. MONTES, A. HIERRO, J. M. ULLOA, A. GUZMÁN, M. AL KHALFIOUI, M. HUGUES, B. DAMILANO, J. MASSIES "Electroluminescence analysis of 1.3-1.5 µm InAs quantum dot LEDs with (Ga,In)(N,As) capping layers" Physical Status Solidi (c), 6, 6, 1424-1427 (2009)
  • [2009] R. GARGALLO-CABALLERO, Á.GUZMÁN, M. HOPKINSON, J. M. ULLOA, A. HIERRO, E. CALLEJA "Dependence of N incorporation into (Ga)InAsN QDs on Ga content probed by rapid thermal annealing" Physica status solidi (c), 6,6, 1441-1444 (2009)
  • [2008] Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes
  • [2008] Local vibration modes and nitrogen incorporation in AlGaAs: N layers
  • [2008] Resonant Raman study of local vibrational modes in AlGaAsN layers
  • [2008] Resonant Raman-active localized vibrational modes in AlyGa{1-y}NxAs{1-x} alloys: Experiment and firstprinciples calculations
  • [2008] The effect of rapid thermal annealing on the photoluminescence of InAsN/InGaAs dot-in-a-well structures
  • [2008] The effect of the individual species of the N plasma on the characteristics of InAsN quantum dots grown by MBE
  • [2008] Vertical composition fluctuations in (Ga,In)(N,As) quantum wells grown on vicinal (1 1 1)B GaAs
  • [2007] J. MIGUEL-SÁNCHEZ, A. GUZMÁN, U. JAHN, A. TRAMPERT, J. M. ULLOA, E. MUÑOZ, A. HIERRO "Role of ionized nitrogen species in the optical and structural properties of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy"Journal of Applied Physics, 101,1035261-10352616 (2007) ISSN: 0021-8979
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• Capítulos de libros
  • [2017] The Impact of Alloyed Capping Layers on the Performance of InAs/GaAs Quantum Dot Solar Cells
  • [2008] Impact of Nitrogen Ion Density on the Optical and Structural Properties of MBE Growh GaInAs/GaAs (100) and (111)B Quantum Wells
  • [2008] Photo- and Electro-luminescence from GaInNAs/GaAs single quantum wells and light emitting diodes
  • [2007] A. HIERRO, J.M. ULLOA, J. MIGUEL-SÁNCHEZ, A. GUZMÁN, A. TRAMPERT, E. TOURNIE "Photo- and Electro-luminescence from GaInNAs/GaAs single quantum wells and light emitting diodes" Nitrides and Dilute Nitrides: Growth, Physics and Devices 2007, 77-98. ISBN 978-81-7895-250-5.
  • [2007] A. HIERRO, J.M. ULLOA, J. MIGUEL-SÁNCHEZ, A. GUZMÁN, A. TRAMPERT, E. TOURNIE "Photo- and Electro-luminescence from GaInNAs/GaAs single quantum wells and light emitting diodes" Nitrides and Dilute Nitrides: Growth, Physics and Devices 2007, 77-98. ISBN 978-81-7895-250-5.
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• Conferencias invitadas en congresos
  • [2019] Interface phonon-polaritons as an all-optical technique to assess the Mg content in ZnO/MgZnO multiple quantum wells
  • [2019] Intersubband transitions in wide band gap semiconductor oxides: a tool to tune the hyperbolic response in metamaterials
  • [2019] Short infrared wavelength quantum cascade detectors based on non-polar ZnO/ZnMgO quantum wells
  • [2019] Using ZnO multiple quantum well metastructures for IR light polarization sensitive photodetection under normal incidence
  • [2018] Breakage of the polarization selection rules for intersubband transitions in ZnO/MgZnO quantum wells
  • [2018] Homoepitaxy of non-polar ZnO/(Zn,Mg)O multi-quantum wells: from a precise growth control to the observation of intersubband transitio
  • [2018] Intersubband transitions and many body effects in ZnMgO/ZnO quantum wells
  • [2018] Phonon-intersubband transition coupling in MgZnO/ZnO quantum wells.
  • [2017] Mind-IR Intersubband absorption in m-plane ZnO/ZnMgO MQWs
  • [2017] Non-polar ZnO/(Zn,Mg)O heterostructures for intersubband devices: novel applications with an old material system
  • [2017] Strain-balanced type-II superlattices for efficient multi-junction solar cells
  • [2017] Using MIS structures to probe bulk traps: the case of ZnO
  • [2016] Scientific Meeting on Advanced Materials for New Technologies
  • [2016] Strain-balanced type-II superlattices for efficient multi-junction solar cells
  • [2016] ZnMgO-based UV photodiodes: a comparison of films grown by spray pyrolysis and MBE
  • [2015] Modified InAs/GaAs quantum dots for enhanced solar cell efficiency
  • [2015] ZnO/ZnMgO multiple quantum well light polarization sensitive photodetectors
  • [2013] GaAsSb(N)-capped InAs quantum dots: from atomic scale characterization to improved devices
  • [2012] Ion beams as a tool for advanced structural characterization in ZnO-based materials
  • [2010] A.HIERRO "ZnMgO-based UV Photodetectors" Instituto de Ciencias de Materiales de Madrid, CSIC Madrid (Spain) 2010
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• Cursos, seminarios y tutoriales
  • [2019] b-Ga2O3 Materials and Devices: MBE and MOCVD Comparisons and Record Transport Properties From the Perspective of Defects
  • [2018] Quick view on our research exchange and interaction with Chonqing Univ. (China) on next perovskites and oxides photovoltaics
  • [2016] Si-based Tandem and Multijunction Solar Cells Using III-V Compounds
  • [2015] Propiedades Ópticas y Estructurales de nanoestructuras de Zn(Cd)(Mg)O
  • [2014] Electronic Structure and Properties of Transparent Conducting Oxide Semiconductors
  • [2013] Applications of ion beam techniques for the study of semiconductors: from growth to processing issues, SEMINARIO INVITADO IMPARTIDO POR ANDRES REDONDO CUBERO
  • [2013] Type II InAs/GaSb superlattice infrared photodetectors. SEMINARIO INVITADO IMPARTIDO POR WENQUAN MA
  • [2012] Prof. Steve A. Ringel. The Ohio State University and Institute for Materials Research (IMR), Ohio (USA). "An introduction to photovoltaics"
  • [2011] Challenges of Understanding GaN HEMT Degradation and Reliability and Recent Results. Prof. Steve A. Ringel
  • [2011] II-Nitride FETs on Nitride Substrates. Prof. Masaaki Kuzuhara
  • [2011] Jornada científica sobre FOTÓNICA EMERGENTE BASADA EN ÓXIDOS AVANZADOS
  • [2011] Jornada científica sobre FOTÓNICA EMERGENTE BASADA EN ÓXIDOS AVANZADOS
  • [2011] Oxide-based UV Photodetection
  • [2011] Resultados de la caracterización eléctrica de los semiconductores GaInAs, GaInNAs, InN y GaN.
  • [2010] MANUEL LOPEZ PONCE "Procesado y caracterización de nanohilos de ZnO crecidos MOCVD-D".27/05/2010. ISOM-ETSIT-UPM. Madrid (España).
  • [2010] Professor STEVEN A. RINGEL. "Spectrum Optimized Solar Cells and Green Light Emitters Using Engineered Si Substrates"-07/05/2010- Ohio State University and Institute for Materials Research (IMR)-Ohio-(USA)
  • [2008] Profesor Steven A. Ringel, Professor and Neal A. Smith Chair in Electrical Engineering Director, Ohio State University Institute for Materials Research Deep Level Optical Spectroscopy:  Approach to Investigate Defects in GaN-AlGaN Materials and Devices
  • [2008] Profesor Steven A. Ringel, Professor and Neal A. Smith Chair in Electrical Engineering Director, Ohio State University Institute for Materials Research Metamorphic III-V Materials for Infrared and High Speed Devices Based on Sub-Lattice Specific Grading
  • [2008] Profesor Steven A. Ringel,Professor and Neal A. Smith Endowed Chair in Electrical Engineering Director, Ohio State Institute for Materials Research Epitaxial Integration of III-V Semiconductors, Devices and Solar Cells with Si via Lattice Engineering
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• Estancias y sabáticos recogidos en programas oficiales
  • [2016] Estancia de Oleksii Klymov
  • [2015] Diseño y crecimiento mediante epitaxia de haces moleculares (MBE) de heterostructuras de ZnO/ZnMgO para la realización de dispositivos optoelectrónicos
  • [2015] Estancia por Programa Erasmus.- Hajar Bencheikh. Lugar de origen: Insa Lyon, France
  • [2012] ESTANCIA INVESTIGADORA DE MANUEL LOPEZ PONCE.-TRPL in ZnCdO nanowires
  • [2010] GEMA TABARES.- Estancia en Department of Electrical and Computer Engineering, Ohio State University (EEUU), bajo la dirección del Profesor Steven Ringel, duración 3 meses.
  • [2009] D. Adrián Hierro Herrero "Research Institute for Electronics- University of Shizuoka" Shizuoka, Japón 2009
  • [2007] Estancia del Doctorando Miguel Montes Bajo, en la University of Sheffield, Department of Electronic and Electrical Engineering, III/V Facility of the EPSRC National Center for III-V Technologies, Sheffield (Reino Unido), Sheffield, para el aprendizaje de técnicas de procesado de láseres estrechos, durante 3 meses, 18/09/2008 al 19/12/2007
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• Otras Publicaciones
  • [2018] Artículo de interés publicado en revista científica. Autores: M. Montes Bajo, J. Tamayo-Arriola, M. Hugues, JM. Ulloa, Nolwenn Le Biavan, R. Peretti, F. H. Julien, J.Faist, J-M Chauveau, A. Hierro, Título: 'Multisubband Plasmons in Doped ZnO Quantum Wells', Revista: Physics Review Applied, Editor's Suggestion, vol. 10, 024005 (2018)
  • [2017] Strain-balanced Type-II superlatices for efficient multi-juntion solar cells
  • [2016] Analysis of capping with GaAsSbN thin layers in (un)coupled InAs/GaAs multi quantum dot layers for enhanced solar cells
  • [2016] Analysis of the Sb and N distribution in GaAsSb/GaAsN superlattices for solar cell applications
  • [2015] Hacia una nueva era en la emisión y la detección de radiación de terahercios. Comienza el proyecto europeo ZOTERAC liderado por Adrián Hierro, que aspira a inaugurar una nueva era en la emisión y detección de radiación de terahercios (THz). La tecnología que surja podría reemplazar a los rayos X convencionales en el campo de la medicina, o mejorar la detección de armas y explosivos, entre otras numerosas aplicaciones. Noticias en la UPM www.zoterac.eu Dr. Adrián Hierro adrian.hierro@upm.es
  • [2011] Processing and adsorption control in ZnO single nanowire photodetectors
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• Otros méritos
  • [2019] Prof. Adrián Hierro. Miembro del Comité Científico del Programa, SPIE Photonics West 2019 - Oxide-based Materials and Devices X, San Francisco, EEUU, 02/01-07/02/2019.
  • [2017] Miembro del Comité Científico del Programa, SPIE Photonics West 2017 - Oxide-based Materials and Devices VIII, San Francisco, EEUU, 28/01-02/02/2017.
  • [2016] Miembro del Comité Científico del Programa, SPIE Photonics West 2016 - Oxide-based Materials and Devices VII, San Francisco, EEUU, 13-18/02/2016.
  • [2015] 2015 European Semiconductor Laser Workshop (EWSL), Madrid, 24-25/09/2015. Miembro del Comité Científico, Adrián Hierro Cano
  • [2015] Evaluador de la Agencia Nacional de Evaluación y Prospectiva, Área de Tecnología Electrónica y de las Comunicaciones, 2006, 2008, 2010, y 2015. Adrián Hierro Cano
  • [2015] Revisión de artículos para su publicación en las revistas: Nanotechnology, IEEE Electron Device Letters, IEEE Photonics Technology Letters, IEEE Journal of Quantum Electronics, Applied Surface Science, Journal of Applied Physics, Applied Physics Letters, Journal of Crystal Growth, Superlattices and Microstuctures, Sensors and Actuators A: Physical, Nanotechnology. Adrián Hierro Cano
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• Ponencia en Congresos
  • [2019] Double-interface surface plasmon modes in CdZnO thin films and their hybridization with phonons
  • [2019] Effect of capping rate on InAs/GaAs quantum dot solar cells
  • [2019] Improving the efficiency of InAs/GaAs quantum dot solar cells by engineering the wetting layer
  • [2019] Improving the efficiency of InAs/GaAs quantum dot solar cells by engineering the wetting layer
  • [2019] Intersubband absorption at normal incidence by m-plane ZnO/MgZnO Quantum Wells
  • [2019] Intersubband plasmons induced negative refraction at mid-IR frequency in heterostructured semiconductor metamaterials
  • [2019] Intersubband plasmons induced negative refraction at mid-IR frequency in heterostructured semiconductor metamaterials
  • [2019] Rock-salt CdZnO for IR plasmonics
  • [2019] Short infrared wavelength quantum cascade detectors based on non-polar ZnO/ZnMgO quantum wells
  • [2018] Bandgap energy and electrical properties of cubic Cd1-xZnxO
  • [2018] Effect of GaAs(Sb)(N) capping layers on (un)coupled In/GaAs multi quantum dot layers for enhanced solar cells
  • [2018] Homoepitaxy on non-polar ZnO/(Zn,Mg)O multi-quantum wells: from a precise growth to the observation of intersubband transitions
  • [2018] Interfacial phonon resonances in ZnO/MgZnO quantum wells : a compositional calibration tool
  • [2018] Interplay between carrier lifetime, electronic coupling, and extraction efficency
  • [2018] Strain-balanced ype-II superlattices for efficient multi-junction solar cells
  • [2018] Type-II GaAsSb/GaAsN superlattice solar cells
  • [2017] Electrical and transport characteristics of non-polar m-plane Ga:MgxZn1-xO
  • [2017] Intersubband Transitions and Polarons in (Zn,Mg)O/ZnO Quantum Wells
  • [2017] Intersubband spectroscopy of ZnO/ZnMgO quantum wells grown on m-plane ZnO substrates for quantum cascade device applications
  • [2017] Strain-balanced type-II GaAsSb/GaAsN superlattices for efficient multi-junction solar cells
  • [2016] Analysis of capping with GaAsSbN thin layers in (un)coupled InAs/GaAs multi quantum dot layers for enhanced solar cells
  • [2016] Analysis of capping with GaAsSbN thin layers in (un)coupled InAs/GaAs multi quantum dot layers for enhanced solar cells
  • [2016] Analysis of the Sb and N distribution in GaAsSb/GaAsN superlattices for solar cell applications
  • [2016] Analysis of the Sb and N distribution in GaAsSb/GaAsN superlattices for solar cell applications
  • [2016] Análisis de la interdifusión en superredes de GaNAsSb para aplicaciones en celdas solares de multiunión
  • [2016] Deep level analysis of non-polar and semipolar homoepitaxial ZnO
  • [2016] Deep level spectroscopy in metal-insulator-semiconductor structures
  • [2016] Infrared intersubband absorption from non-polar homoepitaxial m-ZnO/ZnMgO MQWs
  • [2016] Non polar ZnO/(Zn,Mg)O homoepitaxial heterostructures for intersubband devices
  • [2016] Non polar ZnO/(Zn,Mg)O multiple quantum wells for intersubband devices grown on ZnO bulk substrates
  • [2016] Role of the wetting layer in the performance of quantum dot solar cells
  • [2016] Role of the wetting layer in the performance of quantum dot solar cells
  • [2016] Strain-balanced GaAsSb-GaAsN Type-II superlattices as 1 eV layer for efficient multi-junction solar cells
  • [2016] Strain-balanced Type-II GaAsSb/GaAsN Superlattices as 1 eV layer for Efficient Multi-junction Solar Cells
  • [2016] Strain-balanced Type-II GaAsSb/GaAsN Superlattices as 1 eV layer for Efficient Multi-junction Solar Cells
  • [2016] Strain-balanced Type-II GaAsSb/GaAsN Superlattices for Efficient Multi-junction Solar Cells
  • [2016] Strain-balanced Type-II GaAsSb/GaAsN Superlattices for Efficient Multi-junction Solar Cells
  • [2016] Strain-balanced type-II GaAsSb/GaAsN superlattices as 1 eV layer for efficient multi-junction solar cells
  • [2016] Strain-balanced type-II GaAsSb/GaAsN superlattices as 1 eV layer for efficient multi-junction solar cells
  • [2016] Strain-balanced type-II GaAsSb/GaAsN superlattices for efficient multi-junction solar cells
  • [2016] Strain-balanced type-II GaAsSb/GaAsN superlattices for efficient multi-junction solar cells
  • [2016] Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
  • [2016] Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
  • [2015] Analysis of Sb and In distribution in GaAsSb-capped InAs quantum dots by advance transmission electron microscopy
  • [2015] Capping layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots
  • [2015] Deep levels in homoepitaxial ZnO and the effect of N doping
  • [2015] GaAs(Sb)(N)-caped InAs/GaAs Quantum Dots for enhanced solar cell efficiency
  • [2015] Stacked GaAs(Sb)(N)-capped InAs/GaAs quantum dots for enhanced solar cell effiiency
  • [2015] Type-I and Type-II InAs/GaAs Quantum Dot solar cells with a GaAsSb capping layer
  • [2014] Deep Level Analysis of Homoepitaxial ZnO Doped with N
  • [2014] Deep and shallow traps in ZnMgO:N
  • [2014] Lattice Structural Effects on Native Point Defect Densities and Energies across MgZnO Alloys
  • [2014] Light Polarization Sensitive Photodetectors with Non-Polar and Semi-Polar Homoepitaxial ZnO/ZnMgO MQWs
  • [2014] Morphological and Structural Characterization of MgxZn1-xO?, 8th International Workshop on Zinc Oxide and Related Materials
  • [2014] Optical Properties of ZnMgO Grown by Spray Pyrolysis and Development of MSM Photodetectors for the UV
  • [2014] Stacked GaAsSbN-capped InAs/GaAs quantum dots for enhanced solar cell efficiency
  • [2014] ZnCdO/ZnO Multiple Quantum Well Nanowires Emitting in the Visible
  • [2013] Acceptor Levels Probed by DLOS in ZnMgO:N
  • [2013] High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing
  • [2013] Impact of a thin GaAsSb capping layer on the lasing characteristics of InAs/GaAs quantum dot lasers
  • [2013] Impact of annealing on the Sb and In distribution in GaAsSb-capped InAs quantum dots
  • [2013] Room temperature luminescence beyond 1.3 ìm from GaAsSbN-capped InAs quantum dots
  • [2013] Room temperature luminescence beyond 1.3 ìm from GaAsSbN-capped InAs quantum dots
  • [2012] Broad band structure tunability of InAs/GaAs quantum dots with a thin GaAsSbN capping layer
  • [2012] Impact of N on the structural properties of GaAsSbN-capped InAs QDs studied by advanced transmission electron microscopy techniques
  • [2012] Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer
  • [2012] Study of the effect of rapid thermal annealing in high Cd content Zn1-XCdXO nanowires grown by MOCVD
  • [2012] Time-resolved Photoluminescence spectroscopy of Zn1-XCdXO nanowires
  • [2012] UV detection with a-ZnO/ZnMgO MQW Schottky and MSM photodetectors on a-ZnO
  • [2011] 8th Spanish conference on electron devices
  • [2011] ANALYSIS OF THE PHOTOLUMINESCENCE OF Zn1-XCdXO NANOWIRES UNDER THERMAL ANNEALING
  • [2011] Absorption analysis of GaAsSb-capped InAs/GaAs quantum-dot infrared photodetectors
  • [2011] Analysis of the modified optical properties of GaAs1-xSbx-capped InAs/GaAs quantum dots
  • [2011] Analysis of the photoluminescence of zn1-xcdxo nanowires under thermal annealing
  • [2011] Evaluation of the In desorption during the capped process in diluted nitride In(Ga)As quantum dots
  • [2011] Gas sensor based on room temperature optical properties of Surface QDs
  • [2011] High Level of Mg Alloying Effects on the Deep Level Defects in MgxZn1-xO
  • [2011] J.M. Ulloa, M. Montes, K. Yamamoto, Z. Gacevic, A. Guzmán, A. Hierro, M. Bozkurt, P.M.Koenraad, D. Fernández, D. González and D. Sales "Tuning the size, strain and band offsets of InAs/GaAs quantum dots through a thin GaAs(Sb)(N) capping layer"
  • [2011] MBE growth approaches for improving Sb-based In0.5Ga0.5As(Sb)/GaAs QDs
  • [2011] Mid-infrared photodetectors based on GaAsSb-capped InAs quantum dots
  • [2011] Modified optical properties of GaAs(Sb)(N)-capped InAs/GaAs quantum dots
  • [2011] Near infrared high efficiency InAs/GaAsSb QDLEDs: band alignment and carrier recombination mechanisms
  • [2011] Oxide based UV photodetection using schottky photodiodes
  • [2011] Processing and adsorption control in ZnO single nanowire photodetectors
  • [2011] Processing and adsorption control in ZnO single nanowire photodetectors
  • [2011] Room temperature photoluminescence of InGaAs Surface Quantum Dots
  • [2011] Size, strain, and band offset engineering in GaAs(Sb)(N)-capped InAs quantum dots for 1.3 - 1.55 µm LEDs and LDs
  • [2011] Synthesis and characterization of GaAsSb-capped InAs-based QDIPs
  • [2011] Tuning the size, strain and band offsets of InAs/GaAs quantum dots through a thin GaAs(Sb)(N) capping layer
  • [2011] ZnMgO-based photodetectors for short wavelength and light polarization detection
  • [2011] ZnMgO-based photodetectors for short wavelength and light polarization detection
  • [2011] ZnO/ZnMgO QW Schottky photodiodes sensitive to light polarization
  • [2010] A.GUZMÁN FERNÁNDEZ, R. GARGALLO-CABLLERO, MJ. MILLA, JM. ULLOA, A. HIERRO "Low optical degradation in InGaAsN/GaAs Quantum Dot p-i-n structures emitting from 1.1 to 1.55 µm" 16th International MBE Conference Berlín (German), 2010
  • [2010] A.GUZMÁN FERNÁNDEZ, R. SAN-ROMÁN, A.HIERRO "Laterally biased double quantum well IR detector fabricated by MBE regrowth". 6th International Conference on Molecular Beam Epitaxy Berlín (Germany), 2010
  • [2010] D.F. REYES, D.L. SALES, R. GARGALLO-CABALLERO, J.M.ULLOA, A. HIERRO, A. GUZMÁN, D. GONZÁLEZ "Efecto de la incorporación de nitrógeno en puntos cuánticos enterrados de in In(Ga)As crecidos sobre GaAs" Congreso Nacional de Materiales, Zaragoza (Spain), 2010
  • [2010] D.F. REYES, D.L. SALES, R. GARGALLO-CABALLERO, J.M.ULLOA, A. HIERRO, A. GUZMÁN, D. GONZÁLEZ. "Effects of the nitrogen incorporation in the optical and structural characteristics of nitrogen-dilute InAsN QDs" European Materials Research Society Spring Meeting 2010 Strasbourg (France), 2010
  • [2010] G. TABARES, A. HIERRO, C. DEPARIS, C. MORHAIN, J-M. CHAUVEAU. "Polarization-Sensitive Schottky Photodiodes Based on A-Plane ZnO/ ZnMgO Multiple Quantum-Wells". 52nd Electronic Materials Conference 2010 Indiana (USA), 2010
  • [2010] J. M. ULLOA, M. DEL MORAL, M. BOZKURT, R. GARGALLO-CABALLERO, A. GUZMÁN, P. M. KOENRAAD, A. HIERRO "GaAsSb-capped InAs quantum dots: from enlarged quantum dot height to alloy fluctuations" Internacional Quantum Dot Conference 2010. Nottinghan (UK), 2010
  • [2010] J.M. ULLOA, R. GARGALLO-CABALLERO, A. GUZMÁN, A. HIERRO . "GaAsSbN-capped InAs quantum dots for 1.3 - 1.55 µm emission" European Materials Research Society Spring Meeting 2010. Strasbourg (France), 2010
  • [2010] K. YAMAMOTO, A. HIERRO, E. MUÑOZ, A. NAKAMURA, J. TEMMYO "ZnCdO multiple-quantum-well green LEDs" 6th International Workshop on ZnO and Related Materials Changchun (China), 2010.
  • [2009] A. HIERRO, G. TABARES, J.M. ULLOA, E. MUÑOZ, A. NAKAMURA, T. HAYASHI, J. TEMMYO "Carrier compensation by deep levels in a-plane MgxZn1-xO Schottky photodiodes grown by RPE-MOCVD" Spring European Materials Research Society Conference 2009 Strasburg (France), 2009
  • [2009] A. HIERRO, G. TABARES, J.M. ULLOA, E. MUÑOZ, A. NAKAMURA, T. HAYASHI, J. TEMMYO "Impact of acceptor states in MgxZn1-xO Schottky photodiodes" Internacional Conference on II-VI Compounds, Saint Petersburg (Russia), 2009
  • [2009] A. NAKAMURA, T. HAYASHI, J. TEMMYO, A. HIERRO, G. TABARES, J.M.ULLOA, E.MUÑOZ "Schottky barrier contacts formed on polar-, nonporlar-MgxZn1-xO film grown by remote-plasma-enhanced MOCVD" Internacional Conference on II-VI Compounds, San Petersburgo, Rusia, 2009
  • [2009] G.TABARES, A.HIERRO, J.M.ULLOA, E.MUÑOZ, A. NAKAMURA, T. HAYASHI, J. TEMMYO "Responsivity and transient response of non-polar Au-MgXZn1-xO Schottky photodiodes" Spring European Materials Research Society Conference 2009 Strasburg (France), 2009
  • [2009] J. MATEOS, S. PÉREZ, R. CUERDO, E. MUÑOZ, F. CALLE, T. GONZÁLEZ "Monte Carlo Simulation of GaN HEMTs: Influence of GaN p-type Doping and High Temperature of Operation" 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE¿09) Málaga (Spain), 2009
  • [2009] J.M. ULLOA, M. DEL MORAL, R. GARGALLO, M. MONTES, A. GUZMAN, A. HIERRO, M. BOZKURT, P.M. KOENRAAD "1.3- 1.5 nm GaAsSb-capped InAs quantum dots: effect of the Sb content on the structural and optical properties" Spring European Materials Research Society Conference 2009 Strasburg (France), 2009
  • [2009] J.M. ULLOA, M. DEL MORAL, R. GARGALLO, M. MONTES, A. GUZMAN, A. HIERRO, M. BOZKURT, P.M. KOENRAAD "1.3- 1.5 µm GaAsSb-capped InAs quantum dots: effect of the Sb content on the structural and optical properties" 15th European Molacular Beam Epitaxy Workshop Zakopane (Poland), 2009
  • [2009] M. MONTES, A. HIERRO, J. M. ULLOA, A. GUZMÁN, M. AL KHALFIOUI, M. HUGUES, B. DAMILANO, J. MASSIES "1.3-1.5 µm emitting InAs quantum dot LEDs with (Ga, In)(N,As) and Ga(As,Sb) capping layers: a comparison" Spring European Materials Research Society Conference 2009 Strasburg (France), 2009
  • [2009] M. MONTES, A. HIERRO, J. M. ULLOA, M. AL KHALFIOUI, M. HUGUES, B. DAMILANO, J. MASSIES "InAs/(Ga,In)(N,As) Quantum Dot LEDs Emitting at 1.3-1.5 ìm" 7th Spanish Conference on Electron Devices 2009 Santiago Compostela (Spain), 2009
  • [2009] R. GARGALLO-CABALLERO, A. GUZMÁN, M. HOPKINSON, A. HIERRO, J. M. ULLOA, E. CALLEJA "Optoelectronic devices based on (Ga,In)(As,N) Quantum dots" 15th European Molacular Beam Epitaxy Workshop Zakopane (Poland), 2009
  • [2008] Electroluminescence analysis of 1.3-1.5 µm InAs quantum dot LEDs with (Ga,In)(N,As) capping layers 35th International Symposium on Compound Semiconductors (ISCS) Friburgo (Alemania), 2008
  • [2008] Enhancement of N incorporation into (Ga)InAsN quantum dots International Symposium on Compound Semiconductors (ISCS) Friburgo (Alemania), 2008
  • [2008] The influence of the Ga content on the N incorporation in InAsN and GaInNAs Quantum Dots 7th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS), Les Arcenaulx, Marseille (Francia), 2008
  • [2007] A. Hierro "Diluted Nitrides For Ir Lasing Applications" 31st Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2007 Venecia (Italia) 20 al 23 de mayo de 2007
  • [2007] J. Miguel-Sánchez, M. Montes, A. Hierro, R. Gargallo-Caballero, A. Guzmán, E. Muñoz, S. Lazic, E. Gallardo, J. M. Calleja "Growth And Characterization Of Algaas(N) On Gaas" 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 de marzo de 2007
  • [2007] J. Miguel-Sánchez, M. Montes, A. Hierro, R. Gargallo-Caballero, A. Guzmán, E. Muñoz, S. Lazic, E. Gallardo, J. M. Calleja "Growth And Characterization Of Algaas(N) On Gaas" 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 de marzo de 2007
  • [2007] M. Montes, A. Hierro, B. Damilano, M. Hugues, M. Al Khalfioui, J.-Y. Duboz, J. Massies "Analysis Of Gain Spectra and Fermi Level Pinning Of Gainnas/Gaas Quantum Well Lasers With 0 To 3.3% N Content" European Materials Research Society 2007 Spring Meeting Estrasburgo (Francia) 28 de mayo al 1 Junio de 2007
  • [2007] M. Montes, A. Hierro, J.M. Ulloa, B. Damilano, M. Hugues, M. Al Khalfioui, J.-Y. Duboz, J. Massies "Role of N plasma species on the morphology and luminescence of InAsN quantum dots grown by MBE" European Materials Research Society (E-MRS) Spring Meeting Estrasburgo (Francia) 28 de mayo al 1 Junio de 2007
  • [2007] R. Gargallo-Caballero, A.Guzmán, J. Miguel-Sánchez, A. Hierro, E.Muñoz. "Analysis of gain spectra and Fermi level pinning of GaInNAs/GaAs quantum well lasers with 0 to 3.3% N content" European Materials Research Society Meeting (E-MRS) 2007 Estrasburgo (Francia) 28 de mayo al 1 Junio de 2007
  • [2007] R. Gargallo-Caballero, J. Miguel-Sánchez, Á. Guzmán, A. Hierro, E. Muñoz. "Structural and optical study of InAsN quantum dots grown on GaAs(100) and buried with different materials" 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 de marzo de 2007
  • [2007] R. Gargallo-Caballero, Á.Guzmán, J. Miguel-Sánchez, A. Hierro. "Role Of N Plasma Species On The Morphology And Luminescence Of Inasn Quantum Dots Grown By Mbe" European Materials Research Society Meeting (E-MRS) 2007 Estrasbourg (Francia) 28 de mayo al 1 Junio de 2007
  • [2007] R. Gargallo-Caballero, Á.Guzmán, J. Miguel-Sánchez, A. Hierro. "Role Of N Plasma Species On The Morphology And Luminescence Of InAsN Quantum Dots Grown By Mbe" European Materials Research Society Meeting (E-MRS) 2007 Estrasbourg (Francia) 28 de mayo al 1 Junio de 2007
  • [2007] S. Lazić, E. Gallardo, J.M. Calleja, J. Miguel-Sánchez, M. Montes, A. Hierro, R. Gargallo-Caballero, A. Guzmán, E. Muñoz, A.M Teweldeberhan, S.Fahy "Resonant Raman study of local vibrational modes in AlxGa1-xAs1-yNy layers" 13th International Conference on Modulated Semiconductor Structures (MSS-13) Génova (Italia) 15 al 20 de julio de 2007
  • [2007] S. Lazic, E. Gallardo, J.M. Calleja, J. Miguel-Sánchez, M. Montes, A. Hierro, R. Gargallo-Caballero, A. Guzmán, E. Muñoz, A.M Teweldeberhan, S.Fahy "Resonant Raman study of local vibrational modes in AlxGa1-xAs1-yNy layers" 13th International Conference on Modulated Semiconductor Structures (MSS-13) Génova (Italia) 15 al 20 de julio de 2007
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• Premios
  • [2016] Premio 'Sociedade Portuguesa de Física' en el congreso EXMATEC
  • [2016] Strain-balanced GaAsSb-GaAsN type-II superlattices as 1eV layer for efficient multi-junction solar cells
  • [2016] Thin GaAsSb capping layers for im-proved performance of InAs/GaAs quantum dot solar cells
• Proyectos de I+D+i
  • [2018] OXPLIR: Plasmónica basada en óxidos para fotodetectores de IR
  • [2015] : Componentes para fotónica de UV basada en óxidos
  • [2015] BEAIO: Ingeniería de bandas con nuevas estructuras de semiconductores II-VI para optoelectrónica avanzada de VIS-IR
  • [2015] COMPONENTES PARA FOTONICA DE UV BASADA EN OXIDOS
  • [2015] FESEM: Extension de medida de catodoluminiscencia (cl) al rango infrarojo en microscopio de barrido electrónico FESEM
  • [2015] FESEM: Extensión de medida de catodoluminiscencia(CL) al rango infrarrojo en microcospio de barrido electrónico FESEM
  • [2015] Zoterac: Zinc Oxide For TeraHertz Cascade Devices
  • [2014] COMPONENTES PARA FOTONICA DE UV BASADA EN OXIDOS
  • [2014] Ingeniería de bandas con nuevas estructuras de semiconductores II-VI para optoelectrónica avanzada de VIS-IR
  • [2014] ZNIMGO-BA SED NANOCOLUMNAR AND CORE-SHELL LEDS WITH HIGH POWER EFFICIENCIES
  • [2013] COMPONENTES PARA FOTONICA DE UV BASADA EN OXIDOS
  • [2013] ZNIMGO-BA SED NANOCOLUMNAR AND CORE-SHELL LEDS WITH HIGH POWER EFFICIENCIES
  • [2012] COMPONENTES PARA FOTONICA DE UV BASADA EN OXIDOS
  • [2012] ZNIMGO-BA SED NANOCOLUMNAR AND CORE-SHELL LEDS WITH HIGH POWER EFFICIENCIES
  • [2011] ''Emerging oxide-based UV Photonics''.
  • [2011] COMPONENTES PARA FOTONICA DE UV BASADA EN OXIDOS
  • [2011] NANO
  • [2011] ZNIMGO-BA SED NANOCOLUMNAR AND CORE-SHELL LEDS WITH HIGH POWER EFFICIENCIES
  • [2010] "ZnMGO-Based nanocolumnar and core-shell LEDs with high power efficiences (THINKLEDs)" ACCION DE COOPERACIÓN CON JAPON Referencia: PIB2010JP-00279
  • [2010] NANO
  • [2010] NANO Y MICRODISPOSITIVOS BASADOS EN ZNO PARA LA DETECCIÓN DE H2 Y UV (THINKOXIDE)
  • [2010] ZnMGO-BASED NANOCOLUMNAR AND CORE-SHELL LEDS WITH HIGH POWER EFFICIENCES
  • [2009] DESARROLLO DE LASERES HORIZONTALES Y DE CAVIDAD VERTICAL PARA LA BANDA DE 1.35 A 1.55 MICRAS.....
  • [2009] FONDOS FEDER A DISPOSICION DE INVESTIGADORES
  • [2009] NANO
  • [2008] 14th European Molecular Beam Epìtaxy" Acción complementaria ACC-030000-2007-3
  • [2008] 14th European Molecular Beam Epìtaxy. Acción complementaria TEC2007-30322-E/
  • [2008] Ayudas financieras para la mejora de las infraestructuras científicas y tecnológicas singulares y para el acceso a las mismas
  • [2008] Ayudas para apoyar las líneas de I+D en el programa de creación y consolidación de grupos de investigación de la UPM. (Resolución de 19 de junio de 2007)
  • [2008] Desarrollo de láseres horizontales y de cavidad vertical para la banda de 1.35 a 1.55 micras basados en pozos cuánticos de GaInNAs/GaAs
  • [2008] Nano y microdispositivos basados en ZnO para la detección de H2 y UV (THINKOXIDE)
  • [2008] Nanoestructuras de semiconductores como componentes para la información cuántica
  • [2007] "14th European Workshop on MBE, Sierra Nevada, Granada, ESPAÑA" Min. Educación y Ciencia, ACC-030000-2007-3 (2007)
  • [2007] "14th European Workshop on MBE, Sierra Nevada, Granada, ESPAÑA" Min. Educación y Ciencia, ACC-030000-2007-3(2007)
  • [2007] "14th European Workshop on MBE, Sierra Nevada, Granada, ESPAÑA" Ministerio de Educación y Ciencia.TEC2007-30322-E/ (2007)
  • [2007] "14th European Workshop on MBE, Sierra Nevada, Granada, ESPAÑA" Ministerio de Educación y Ciencia.TEC2007-30322-E/ (2007)
  • [2007] "14th European Workshop on MBE, Sierra Nevada, Granada, ESPAÑA.ISOM-UPM
  • [2007] "Asistencia técnica para el control y caracterización de las matrices tricolor del demostrador SIRIO"PROGRAMA DN8644: COINCIDENTE SIRIO (2006-2007. CIDA- Univ. Politécnica
  • [2007] "Ayudas para apoyar las líneas de I+D en el programa de creación y consolidación de grupos de investigación de la Universidad Politécnica de Madrid. CAM, Referencia: CCG07-UPM/000-3220"
  • [2007] "Desarrollo de láseres horizontales y de cavidad vertical para la banda de 1.35 a 1.55 micras basados en pozos cuánticos de GaInNAs/GaAs" Min. Educación y Ciencia, TEC2005-03694/MIC (2005-2008).
  • [2007] "Desarrollo matriz de detectores multiespectral en el infrarrojo 3-5 micras"FIT-330101-2007-11 (2007-2009)
  • [2007] "International Workshop 2007 on MBE". Sierra Nevada, Granada, España. ISOM-UPM
  • [2007] "Microscopio de barrido de capacidad para caracterización de nanoestructuras". Min. Educación y Ciencia, UNPM06-33-037 (2007)
  • [2007] "Nanoestructuras de Semiconductores como Componentes para la Información Cuántica (NANIC)" Min. Educación y Ciencia, Acción Estratégica en Nanotecnología. NAN2004-09109-C04-02. (2005-2008).
  • [2007] "Nanoestructuras de Semiconductores como Componentes para la Información Cuántica (NANIC)" Min. Educación y Ciencia, Acción Estratégica en Nanotecnología. NAN2004-09109-C04-02. (2005-2008).
  • [2007] "Nanoestructuras de semiconductores como componentes para la información cuántica"(NANOCOMIC)
  • [2007] "Sistema de caracterización óptica avanzada multifuncional"
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• Responsabilidades
  • [2019] Dirección del ISOM.- Prof. Adrián Hierro (2019-)
  • [2018] Dr. Adrián Hierro - Evaluador de la Agencia Nacional de Evaluación y Prospectiva (ANEP), Área de Tecnología Electrónica y de las Comunicaciones, 2006, 2008, 2010, 2015, 2016, y 2018.
  • [2018] Dr. Adrián Hierro.- Miembro del Comité Científico del Programa, SPIE Photonics West 2018 - Oxide-based Materials and Devices IX, San Francisco, EEUU, 27/01-01/02/2018.
  • [2016] Responsable de Sala de Optoelectrónica
  • [2008] Profesor Adrián Hierro Cano.- Miembro del Comité Técnico de las Jornadas de Seguimiento y Evaluación de Proyectos de Investigación (Ministerio de Ciencia e Innovación), Programa de Tecnología Electrónica y Comunicaciones, Subprograma de Electrónica, 2008.
  • [2007] Adrián Hierro Cano, Evaluador de la Agencia Nacional de Evaluación y Prospectiva, Área de Tecnología Electrónica y de las Comunicaciones.
  • [2007] Adrián Hierro Cano, Miembro del Comité Local del 14th Euro-MBE Workshop, Granada, 2007.
  • [2007] Adrián Hierro Cano, Premio Extraordinario del Doctorado, a su cargo, otorgado a José María Ulloa Herrero por la Universidad Politécnica de Madrid, Madrid (2007).
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• Tesis Doctorales
  • [2019] Infrared intersubband detection and plasmonics with (Zn,Mg)O and (Cd,Zn)O compounds
  • [2017] Deep levels and acceptors in Zn(Mg)O: effect of N-doping
  • [2015] Propiedades Ópticas y Estructurales de nanoestructuras de Zn(Cd)(Mg)O
  • [2014] Fotodiodos basados en (Zn,Mg)O para la detección de luz ultravioleta
  • [2010] GaAs-based quantum well and quantum dot light-emitting diodes and lasers for 1.3 and 1.55 um emission
  ...
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