Portal de Transparencia

Actividad investigadora:

• Artículos en revistas
  • [2019] Intersubband absorption at normal incidence by m-plane ZnO/MgZnO Quantum Wells
  • [2019] Optical Phase Transition in Semiconductor Quantum Metamaterials
  • [2019] Topology Driven g-Factor Tuning in Type-II Quantum Dots
  • [2018] Breaking the Intersubband Selection Rules for Absorption with ZnO Quantum Wells: Light Polarization Sensitivity under Normal Incidence
  • [2018] Compositional inhomogeneities in type-I and type-II superlattices for GaAsSbN-based solar cells: Effect of thermal annealing
  • [2018] Effect of GaAs(Sb)(N) capping layers on (un)coupled InAs/GaAs multi quantum dot laters for enhanced solar cells
  • [2018] Ga-doping of nonpolar m-plane ZnMgO with high Mg contents
  • [2018] GaAsN/GaAsSb superlattices as 1 eV layers for efficient multi-junction solar cells
  • [2018] Intersubband transitions and many body effects in ZnMgO/ZnO quantum wells
  • [2018] Modelling of the Sb and N distribution in type II GaAsSb/GaAsN superlattices for solar cell applications
  • [2018] Multisubband Plasmons in Doped ZnO Quantum Wells
  • [2018] Photocarrier extraction in GaAsSb/GaAsN type-II QW superlattice solar cells
  • [2018] Size and shape tunability of self-assembled InAs/GaAs nanostructures through the capping rate
  • [2018] Type-II GaAsSb/GaAsN superlattice solar cells
  • [2018] Type-II GaAsSb/GaAsN superlattice solar cells
  • [2017] Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process
  • [2017] Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0-1.16-eV Photonic Applications
  • [2017] Sb and N incorporation interplay in GaAsSbN/GaAs epilayers near lattice matching con-dition for 1.0.-1.16 eV photonic applications
  • [2017] Scanning tunneling spectroscopic monitoring of surface states role on water passivation of InGaAs uncapped quantum dots
  • [2017] Strain-balanced type-II superlattices for efficient multi-junction solar cells
  • [2017] Strain-balanced type-II superlattices for efficient multi-junction solar cells
  • [2017] Strain-balanced type-II superlattices for efficient multi-junction solar cells
  • [2017] Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
  • [2016] (S)TEM analysis of the strain and morphology of InAs quantum dots using GaAs(Sb)(N) capping layers for solar cell applications
  • [2016] (S)TEM analysis of the strain and morphology of InAs quantum dots using GaAs(Sb)(N) capping layers for solar cell applications
  • [2016] General route for the decomposition of InAs quantum dots during the capping process
  • [2016] Impact of alloyed capping layers on the performance of In As quantum dot solar cells
  • [2016] Influence of Sb/N contents during the capping process on the morphology of InAs/GaAs quantum dots
  • [2016] Strain mapping accuracy improve-ment using Super-Resolution techniques
  • [2016] Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
  • [2016] Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
  • [2016] Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
  • [2016] Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
  • [2015] Effect of annealing in the Sb and In distribution of type II GaAsSb-capped InAs quantum dots
  • [2015] Optical properties of ZnMgO films grown by spray pyrolysis and their application to UV photodetection
  • [2015] Role of the wetting layer in the enhanced responsivity of InAs/GaAsSb quantum dot infrared photodetectors
  • [2015] Stacked GaAs(Sb)(N)-capped InAs/GaAs quantum dots for enhanced solar cell efficiency
  • [2015] Type II InAs/GaAsSb quantum dots: Highly tunable exciton geometry and topology
  • [2014] Height control of self-assembled quantum dots by strain engineering during capping
  • [2014] InAs quantum dot morphology after capping with In, N, Sb alloyed thin films
  • [2014] Photoexcited-induced sensitivity of InGaAs surface QDs to environment
  • [2014] Strong Influence of the Humidity on the Electrical Properties of InGaAs Surface Quantum Dots
  • [2013] Dependence of Surface InGaAs Quantum Dot Luminescence on the Molecular Properties of the Environment
  • [2013] Dependence of Surface InGaAs Quantum Dot Luminescence on the Molecular Properties of the Environment
  • [2013] Impact of the Sb content on the performance of GaAsSb-capped InAs/GaAs quantum dot lasers
  • [2013] Impact of the Sb content on the performance of GaAsSb-capped InAs/GaAs quantum dot lasers
  • [2013] Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: Effect of thermal annealing
  • [2013] Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: Effect of thermal annealing
  • [2013] Self-assembled MgxZn1-xO quantum dots (0 <= x <= 1) on different substrates using spray pyrolysis methodology
  • [2013] Self-assembled MgxZn1-xO quantum dots (0 <= x <= 1) on different substrates using spray pyrolysis methodology
  • [2012] Analysis of the modified optical properties and band structure of GaAs1-xSbx-capped InAs/GaAs quantum dots
  • [2012] Analysis of the modified optical properties and band structure of GaAs12xSbx-capped InAs/GaAs quantum dots
  • [2012] High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing
  • [2012] High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing
  • [2012] High optical sensitivity to ambient conditions of uncapped InGaAs surface quantum dots
  • [2012] Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots
  • [2012] Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots
  • [2012] Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots
  • [2012] Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer
  • [2012] Kinetic Monte Carlo simulations and cross-sectional scanning tunneling microscopy as tools to investigate the heteroepitaxial capping of self-assembled quantum dots
  • [2012] Self-assembled MgxZn1-xO quantum dots (0¡Ü x ¡Ü1) on different substrates using spray pyrolysis methodology
  • [2012] Top-Hat HELLISH-VCSOA for optical amplification and wavelength conversion for 0.85 to 1.3ìm operation
  • [2011] An atomic scale study on the effect of Sb during capping of MBE grown III-V semiconductor QDs
  • [2011] Inhibition of In desorption in diluted nitride InAsN quantum dots
  • [2011] Near Infrared InAs/GaAsSb Quantum Dot Light Emitting Diodes
  • [2010] A. NAKAMURA,T. HAYASHI , A.HIERRO, G.TABARES, J.M.ULLOA, E.MUÑOZ, J. TEMMYO, "Schottky barrier contacts formed on polar and nonpolar MgxZn1-xO films grown by remote plasma enhanced MOCVD" Phys. Status Solidi B 247, 1472-1475, 2010.
  • [2010] Current Spreading Efficiency and Fermi Level Pinning in GaInNAs-GaAs Quantum-Well Laser Diodes
  • [2010] External efficiency and carrier loss mechanisms in InAs/GaInNAs quantum dot light-emitting diodes
  • [2010] G. TABARES, A. HIERRO, J.M. ULLOA, A. GUZMAN, E. MUÑOZ, A. NAKAMURA, T. HAYASHI, J. TEMMYO "High responsivity and internal gain mechanisms in Au-ZnMgO Schottky photodiodes" Applied Physics Letters 96, 101112/1-101112/3, 2010.
  • [2010] GaAsSb-capped InAs quantum dots: From enlarged quantum dot height to alloy fluctuations
  • [2010] High responsivity and internal gain mechanisms in Au-ZnMgO Schottky photodiodes
  • [2010] J.M. ULLOA, P. M. KOENRAAD, M. BONNET-EYMARD, A. LÉTOUBLON, N. BERTRU ''Effect of a lattice-matched GaAsSb capping layer on the structural properties of InAs/InGaAs/InP quantum dots'' J. Appl. Phys. 107, 074309 (2010)
  • [2010] J.M. ULLOA, R. GARGALLO-CABALLERO, M. BOZKURT, M. DEL MORAL, P. M. KOENRAAD, A. GUZMAN, A. HIERRO ''GaAsSb-capped InAs quantum dots: from enlarged quantum dot height to alloy fluctuations'' Physical Review B, 81, 165305 (2010)
  • [2010] M. BOZKURT, V. A. GRANT, J. M. ULLOA, R. P. CAMPION, C. T. FOXON, E. MAREGA, JR., G. J. SALAMO, P. M. KOENRAAD ''Atomic scale characterization of Mn doped InAs/GaAs quantum dots'' Applied Physics Letters, 96, 042108 (2010)
  • [2010] M. MONTES, A. HIERRO, J. M ULLOA, J. MIGUEL-SÁNCHEZ, A. GUZMÁN, B. DAMILANO, M. HUGUES, M. AL KHALFIOUI, J.-Y. DUBOZ, J. MASSIES, "Current spreading efficiency and Fermi level pinning in GaInNAs/GaAs quantum well laser diodes" IEEE Journal of Quantum Electronics 46, 1058-1065, 2010.
  • [2010] M. MONTES, A. HIERRO, J. M. ULLOA, A. GUZMÁN, M. AL KHALFIOUI, M. HUGUES, B. DAMILANO, J. MASSIES "External efficiency and carrier loss mechanisms in InAs/GaInNAs quantum dot light emitting diodes". Journal of Applied Physics 108, 033104/1-033104/8, 2010.
  • [2009] A.HIERRO, G. TABARES, J. M. ULLOA, E. MUÑOZ, A. NAKAMURA, T. HAYASHI, J. TEMMYO "Carrier compensation by deep levels in Zn1-xMgxO/sapphire" Applied Physics Letters, 94, 232101-1, 232101-3 (2009)
  • [2009] J. M. ULLOA, M. BOZKURT, P. M. KOENRAAD "Intrinsic and Mn doped InAs quantum dots studied at the atomic scale by crossectional scanning tunnelling microscopy" Solid State Comunications, R, 149, 1410 (2009)
  • [2009] J.H. BLOKLAND, M. BOZKURT, J.M. ULLOA, D. REUTER, A.D. WIECK, P.M. KOENRAAD, P.C.M. CHRISTIANEN, J.C. MAAN "Ellipsoidal InAs quantum dots observed by cross-sectional STM" Applied Physics Letters, 94, 023107 (2009)
  • [2009] M. MONTES, A. HIERRO, J. M. ULLOA, A. GUZMÁN, M. AL KHALFIOUI, M. HUGUES, B. DAMILANO, J. MASSIES "Electroluminescence analysis of 1.3-1.5 µm InAs quantum dot LEDs with (Ga,In)(N,As) capping layers" Physical Status Solidi (c), 6, 6, 1424-1427 (2009)
  • [2009] R. GARGALLO-CABALLERO, Á.GUZMÁN, M. HOPKINSON, J. M. ULLOA, A. HIERRO, E. CALLEJA "Dependence of N incorporation into (Ga)InAsN QDs on Ga content probed by rapid thermal annealing" Physica status solidi (c), 6,6, 1441-1444 (2009)
  • [2009] V. HAXHA, I. DROUZAS, J.M. ULLOA, M. BOZKURT, P.M. KOENRAAD, D.J. MOWBRAY, H.Y. LIU, M.J. STEER, M. HOPKINSON, M.A. MIGLIORATO "Role of Segregation in InAs/GaAs Quantum Dot Structures Capped with a GaAsSb Strain Reduction Layer" Physical Review B 80, 165334 (2009)
  • [2009] V. HAXHA, R.GARG, M.A.MIGLIORATO, I.W.DROUZAS, J.M.ULLOA, P.M.KOENRAAD, M.J.STEER, H.Y.LIU, M.J.HOPKINSON, D.J.MOWBRAY "Empirical bond order potential calculations of the elastic properties of epitaxial InGaSbAs layers" Microelectronics Journal 40, 533-536 (2009)
  • [2009] V. MLINAR, M. BOZKURT, J. M. ULLOA, M. EDIGER, G. BESTER, A. BADOLATO, P. M. KOENRAAD, R. J. WARBURTON, A. ZUNGER "Structure of quantum dots as seen by excitonic spectroscopy versus structural characterization: Using theory to close the loop" Physical Review B, 80, 165425 (2009)
  • [2008] Analysis of the characteristic temperatures of (Ga,In)(N,As)/GaAs laser diodes
  • [2008] Influence of an ultrathin GaAs interlayer on the structural properties of InAs/InGaAsP/InP (100) quantum dots investigated by cross-sectional scanning tunneling microscopy
  • [2008] Self-assembling processes involved in the molecular beam epitaxy growth of stacked InAs/InP quantum wires
  • [2008] Structural properties of GaAsN/GaAs quantum wells studied at the atomic scale by cross-sectional scanning tunnelling microscopy
  • [2007] A. WIERTS, J.M. ULLOA, C. ÇELEBI, P.M. KOENRAAD, H. BOUKARI, L. MAINGAULT, R. ANDRÉ, H. MARIETTE "Cross-sectional scanning tunnelling microscopy study on II-VI multilayer structures" Applied Physics Letters, 91, 161907-161909 (2007) ISSN: 0003-6951
  • [2007] J. M. ULLOA, C. ÇELEBI, P. M. KOENRAAD, A. SIMON, E. GAPIHAN, A. LETOUBLON, N. BERTRU, I. DROUZAS, D.J. MOWBRAY, M.J. STEER, M. HOPKINSON "Atomic scale study of the impact of the strain and composition of the capping layer on the formation of InAs quantum dots"Journal of Applied Physics, 101, 081707-081712 (2007) ISSN: 0021-8979
  • [2007] J. M. ULLOA, I. W. D. DROUZAS, P. M. KOENRAAD, D.J. MOWBRAY, M.J. STEER, H. Y. LIU, M. HOPKINSON "Suppression of InAs/GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer" Applied Physics Letters 90, 213105-213108 (2007) ISSN: 0003-6951
  • [2007] J. M. ULLOA, P. M. KOENRAAD, E. GAPIHAN, A. LÉTOUBLON, N. BERTRU. "Double capping of MBE grown InAs/InP quantum dots studied by cross-sectional scanning tunneling microscopy" Applied Physics Letters, 91, 073106-073109 (2007) ISSN: 0003-6951
  • [2007] L. OUATTARA, J. M. ULLOA, A. MIKKELSEN, E. LUNDGREN, P. M. KOENRAAD, M. BORGSTRÖM, L. SAMUELSON, W. SEIFERT "Correlation lengths in stacked quantum dot systems: Experiment and Theory" Nanotechnology, 18,145403 -145406 (2007) ISSN: 0957-4484
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• Capítulos de libros
  • [2018] From Dot to Ring: Tunable Exciton Topology in Type-II InAs/GaAsSb Quantum Dots
  • [2017] The Impact of Alloyed Capping Layers on the Performance of InAs/GaAs Quantum Dot Solar Cells
  • [2008] InAs Quantum Dot Formation Studied at the Atomic Scale by Cross-sectional Scanning Tunnelling Microscopy
  • [2008] Photo- and Electro-luminescence from GaInNAs/GaAs single quantum wells and light emitting diodes
  • [2007] A. HIERRO, J.M. ULLOA, J. MIGUEL-SÁNCHEZ, A. GUZMÁN, A. TRAMPERT, E. TOURNIE "Photo- and Electro-luminescence from GaInNAs/GaAs single quantum wells and light emitting diodes" Nitrides and Dilute Nitrides: Growth, Physics and Devices 2007, 77-98. ISBN 978-81-7895-250-5.
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• Conferencias invitadas en congresos
  • [2019] Interface phonon-polaritons as an all-optical technique to assess the Mg content in ZnO/MgZnO multiple quantum wells
  • [2019] Using ZnO multiple quantum well metastructures for IR light polarization sensitive photodetection under normal incidence
  • [2018] Breakage of the polarization selection rules for intersubband transitions in ZnO/MgZnO quantum wells
  • [2018] Intersubband transitions and many body effects in ZnMgO/ZnO quantum wells
  • [2018] Phonon-intersubband transition coupling in MgZnO/ZnO quantum wells.
  • [2017] Strain-balanced type-II superlattices for efficient multi-junction solar cells
  • [2016] Strain-balanced type-II superlattices for efficient multi-junction solar cells
  • [2016] ZnMgO-based UV photodiodes: a comparison of films grown by spray pyrolysis and MBE
  • [2015] High sensitivity to environment of InGaAs surface nanostructures
  • [2015] High sensitivity to environment of InGaAs surface nanostructures
  • [2015] Modified InAs/GaAs quantum dots for enhanced solar cell efficiency
  • [2013] GaAsSb(N)-capped InAs quantum dots: from atomic scale characterization to improved devices
  • [2012] Cross-sectional scanning tunneling microscopy of semiconductor nanostructures
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• Cursos, seminarios y tutoriales
  • [2019] Diluted nitride type-If superlattices for solar cells
  • [2016] Curso impartido por el Dr. José María Ulloa Herrero. University of Belgrade
  • [2015] Propiedades Ópticas y Estructurales de nanoestructuras de Zn(Cd)(Mg)O
  • [2011] Jornada científica sobre FOTÓNICA EMERGENTE BASADA EN ÓXIDOS AVANZADOS
  • [2011] Jornada científica sobre FOTÓNICA EMERGENTE BASADA EN ÓXIDOS AVANZADOS
  • [2009] Dr. José María Ulloa "1.3- 1.55 µm InAs/GaAs quantum dots capped with GaAsSb: effect of the Sb content on the structural and optical properties" April 24th, 2009
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• Estancias y sabáticos recogidos en programas oficiales
  • [2017] Estancia breve de Urs Aeberhard.- Organismo IEK-5 Photovoltaik, Forshungszentrum Julich.
  • [2017] Estancia de Prof. Jelena Radovanovic, programa de movilidad Erasmus+ Mobility Agreement Staff Mobility for teaching.
  • [2017] Estancia, Erasmus, Master Project.- Lazar Stanojevic
  • [2017] Estancia, Erasmus, Master Project.- Lazar Stanojevic
  • [2017] Estancia, Erasmus, Master Project.- Lazar Stanojevic programa de movilidad Erasmus+ Mobility Agreement
  • [2017] Estancia, Erasmus, Master Project.- Lazar Stanojevic programa de movilidad Erasmus+ Mobility Agreement
  • [2016] Estancia del Dr. José María Ulloa. Univesity of Belgrade
  • [2009] D. José María Ulloa Herrero Technical University Eindhoven Eindhoven, The Nederlands 2009
  • [2008] ESTANCIA DEL DR. JOSE MARÍA ULLOA HERRERO, CENTRO: Technical University Eindhoven LOCALIDAD: Eindhoven PAÍS: Países Bajos AÑO: 2008 DURACIÓN: 5 meses TEMA: Estudio de las propiedades estructurales de nanostructuras semiconductoras cero-dimensionales
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• Otras Publicaciones
  • [2018] Impactante nuevo visionado del experimento del ISOM en programa 'El hormiguero' de Antena 3 Televisión, España El día 10 de mayo de 2018 se ha emitido un experimento montado en el ISOM por el Dr. José María Ulloa Herrero, consistente en hacer invisibles objetos mediante óptica geométrica (Paraxial cloaking).
  • [2017] Strain-balanced Type-II superlatices for efficient multi-juntion solar cells
  • [2017] Web UPM: Entrevista a José María Ulloa, investigador del ISOM que acaba de recibir la medalla como finalista del Premio Agustín de Betancourt y Molina de la Real Academia de Ingeniería: La nanoingeniería de materiales puede aumentar la eficiencia de las células solares
  • [2016] Analysis of capping with GaAsSbN thin layers in (un)coupled InAs/GaAs multi quantum dot layers for enhanced solar cells
  • [2016] Analysis of the Sb and N distribution in GaAsSb/GaAsN superlattices for solar cell applications
  • [2016] Concesión Premio Caja Ingenieros - 09/12/2016. El jurado designado para fallar la concesión de la VI Edición del Premio SOCIEMAT
  • [2016] Una medalla Agustín de Betancourt y Molina para el Investigador del ISOM-UPM Dr. José María Ulloa Herrero (Premios Investigadores y Profesionales Jóvenes 2016), ha sido entregada el 22 de noviembre de 2016
  • [2015] Visionado del experimento del ISOM en programa 'El hormiguero' de Antena 3 Televisión, España. El día 19 de enero 2015 se emitió un experimento montado en el ISOM por el Dr. José María Ulloa Herrero, consistente en hacer invisibles objetos mediante óptica geométrica (Paraxial cloaking). http://www.antena3.com/programas/el-hormiguero/secciones/ciencia-marron/maquina-invisibilizadora-upm_2015011900391.html Dr. José María Ulloa Herrero jmulloa@isom.upm.es
  • [2014] 2.18 ?m Mid IR emission from highly transparent Er3+ doped tellurite glass ceramic for bio applications
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• Otros méritos
  • [2017] Miembro del comité de programa del congreso internacional SPIE Optics+Photonics, Symposium: Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz. San diego, EE.UU., 6-10/08/2017
  • [2016] Multiscale in modelling and validation for solar photovoltaics, European COST action MP1406, 2014-present.
• Ponencia en Congresos
  • [2019] Formation of agglomerations in high-density multilayer InAs/GaAs quantum dot structures: the role of Sb in the capping layer
  • [2019] Analysis of the N distribution in GaAs(Sb)(N) super1attices from ADF imaging
  • [2019] Effect of capping rate on InAs/GaAs quantum dot solar cells
  • [2019] Hydrogen Passivation of N:GaAs Studied by Cross-Sectional Scanning Tunneling Microscopy
  • [2019] Improving the efficiency of InAs/GaAs quantum dot solar cells by engineering the wetting layer
  • [2019] Improving the efficiency of InAs/GaAs quantum dot solar cells by engineering the wetting layer
  • [2019] Influence of GaAsSb capping layers on the vertical-alignment in closely stacked InAs/GaAs multi quantum dots
  • [2019] Influence of GaAsSb capping layers on the vertical-alignment in closely stacked InAs/GaAs multi quantum dots
  • [2019] Intersubband absorption at normal incidence by m-plane ZnO/MgZnO Quantum Wells
  • [2019] Intersubband plasmons induced negative refraction at mid-IR frequency in heterostructured semiconductor metamaterials
  • [2019] Intersubband plasmons induced negative refraction at mid-IR frequency in heterostructured semiconductor metamaterials
  • [2019] Sb and N incorporation interplay in GaAsSbN/GaAs epilayers
  • [2018] Analysis of bismuth segregation in InAsBi/InAs superlattices grown by MBE
  • [2018] Effect of GaAs(Sb)(N) capping layers on (un)coupled In/GaAs multi quantum dot layers for enhanced solar cells
  • [2018] Effect of GaAs(Sb)(N) capping layers on (un)coupled InAs/GaAs multi quantum dot layers for enhanced solar cells
  • [2018] Interfacial phonon resonances in ZnO/MgZnO quantum wells : a compositional calibration tool
  • [2018] Interplay between carrier lifetime, electronic coupling, and extraction efficency
  • [2018] Nitrogen mapping from ADF analysis in GaAsSb(N) superlattices for high efficient solar cells
  • [2018] Strain-balanced ype-II superlattices for efficient multi-junction solar cells
  • [2018] Type-II GaAsSb/GaAsN superlattice solar cells
  • [2017] Effect of the capping layer composition and growth rate in the InAs quantum dots/wetting layer system
  • [2017] Effect of thin GaAs(SbN) capping layers on (un)coupled InAs/GaAs multi-quantum dot layers for enhanced solar cells
  • [2017] Electrical and transport characteristics of non-polar m-plane Ga:MgxZn1-xO
  • [2017] Evolution of InAs quantum dots/wetting layer system under different GaAs capping layer growth rates
  • [2017] Intersubband Transitions and Polarons in (Zn,Mg)O/ZnO Quantum Wells
  • [2017] New growth approaches to improve the performance in GaAsSbN-based solar cells
  • [2017] Strain-balanced type-II GaAsSb/GaAsN superlattices for efficient multi-junction solar cells
  • [2016] Analysis of capping with GaAsSbN thin layers in (un)coupled InAs/GaAs multi quantum dot layers for enhanced solar cells
  • [2016] Analysis of capping with GaAsSbN thin layers in (un)coupled InAs/GaAs multi quantum dot layers for enhanced solar cells
  • [2016] Analysis of the Sb and N distribution in GaAsSb/GaAsN superlattices for solar cell applications
  • [2016] Analysis of the Sb and N distribution in GaAsSb/GaAsN superlattices for solar cell applications
  • [2016] Análisis de la interdifusión en superredes de GaNAsSb para aplicaciones en celdas solares de multiunión
  • [2016] Evolution of InAs quantum dots/wetting layer system under different GaAs capping layer growth rates
  • [2016] Infrared intersubband absorption from non-polar homoepitaxial m-ZnO/ZnMgO MQWs
  • [2016] Quality enhancement and strain measurement in HAADF images using Super-Resolution techniques
  • [2016] Role of the wetting layer in the performance of quantum dot solar cells
  • [2016] Role of the wetting layer in the performance of quantum dot solar cells
  • [2016] Strain measurement inside dumbbells in HAADF images using Super-Resolution techniques
  • [2016] Strain-balanced GaAsSb-GaAsN Type-II superlattices as 1 eV layer for efficient multi-junction solar cells
  • [2016] Strain-balanced Type-II GaAsSb/GaAsN Superlattices as 1 eV layer for Efficient Multi-junction Solar Cells
  • [2016] Strain-balanced Type-II GaAsSb/GaAsN Superlattices as 1 eV layer for Efficient Multi-junction Solar Cells
  • [2016] Strain-balanced Type-II GaAsSb/GaAsN Superlattices for Efficient Multi-junction Solar Cells
  • [2016] Strain-balanced Type-II GaAsSb/GaAsN Superlattices for Efficient Multi-junction Solar Cells
  • [2016] Strain-balanced type-II GaAsSb/GaAsN superlattices as 1 eV layer for efficient multi-junction solar cells
  • [2016] Strain-balanced type-II GaAsSb/GaAsN superlattices as 1 eV layer for efficient multi-junction solar cells
  • [2016] Strain-balanced type-II GaAsSb/GaAsN superlattices for efficient multi-junction solar cells
  • [2016] Strain-balanced type-II GaAsSb/GaAsN superlattices for efficient multi-junction solar cells
  • [2016] Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
  • [2016] Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells
  • [2015] (S)TEM Analysis of the Strain and Morphology of InAs Quantum Dots using GaAs(Sb)(N) capping layers for Solar Cell Applications
  • [2015] Analysis of Sb and In distribution in GaAsSb-capped InAs quantum dots by advance transmission electron microscopy
  • [2015] Capping layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots
  • [2015] GaAs(Sb)(N)-caped InAs/GaAs Quantum Dots for enhanced solar cell efficiency
  • [2015] General decomposition route of InAs quantum dots during the capping process
  • [2015] Influence of Sb/N contents during the capping process on the morphology of InAs/GaAs quantum dots
  • [2015] Localization of the hole wavefunction in InAs/GaAsSb quantum dots
  • [2015] Stacked GaAs(Sb)(N)-capped InAs/GaAs quantum dots for enhanced solar cell effiiency
  • [2015] Type-I and Type-II InAs/GaAs Quantum Dot solar cells with a GaAsSb capping layer
  • [2014] 2.18 µm Mid IR emission from highly transparent Er 3+ doped tellurite glass ceramic for bio applications
  • [2014] Height control of self-assembled quantum dots
  • [2014] Morphological and Structural Characterization of MgxZn1-xO?, 8th International Workshop on Zinc Oxide and Related Materials
  • [2014] Optical Properties of ZnMgO Grown by Spray Pyrolysis and Development of MSM Photodetectors for the UV
  • [2014] Stacked GaAsSbN-capped InAs/GaAs quantum dots for enhanced solar cell efficiency
  • [2014] ZnCdO/ZnO Multiple Quantum Well Nanowires Emitting in the Visible
  • [2013] High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing
  • [2013] High performance environment sensors based on InGaAs surface Quantum Dots.
  • [2013] Impact of a thin GaAsSb capping layer on the lasing characteristics of InAs/GaAs quantum dot lasers
  • [2013] Impact of annealing on the Sb and In distribution in GaAsSb-capped InAs quantum dots
  • [2013] Room temperature luminescence beyond 1.3 ìm from GaAsSbN-capped InAs quantum dots
  • [2013] Room temperature luminescence beyond 1.3 ìm from GaAsSbN-capped InAs quantum dots
  • [2012] Broad band structure tunability of InAs/GaAs quantum dots with a thin GaAsSbN capping layer
  • [2012] Impact of N on the structural properties of GaAsSbN-capped InAs QDs studied by advanced transmission electron microscopy techniques
  • [2012] Impact of the environment on the optical emission of InGaAs surface quantum dots
  • [2012] Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer
  • [2012] Optical properties of GaAsSb capped InAs/GaAs self-assembled quantum dots under thermal annealing
  • [2012] Study of the effect of rapid thermal annealing in high Cd content Zn1-XCdXO nanowires grown by MOCVD
  • [2012] Time-resolved Photoluminescence spectroscopy of Zn1-XCdXO nanowires
  • [2012] Top-Hat HELLISH (THH)-VCSOA based on a light emitting and an absorbing for 1.3 µm wavelength operation
  • [2011] ANALYSIS OF THE PHOTOLUMINESCENCE OF Zn1-XCdXO NANOWIRES UNDER THERMAL ANNEALING
  • [2011] Absorption analysis of GaAsSb-capped InAs/GaAs quantum-dot infrared photodetectors
  • [2011] Analysis of the modified optical properties of GaAs1-xSbx-capped InAs/GaAs quantum dots
  • [2011] Analysis of the photoluminescence of zn1-xcdxo nanowires under thermal annealing
  • [2011] Evaluation of the In desorption during the capped process in diluted nitride In(Ga)As quantum dots
  • [2011] Gas sensor based on room temperature optical properties of Surface QDs
  • [2011] J.M. Ulloa, M. Montes, K. Yamamoto, Z. Gacevic, A. Guzmán, A. Hierro, M. Bozkurt, P.M.Koenraad, D. Fernández, D. González and D. Sales "Tuning the size, strain and band offsets of InAs/GaAs quantum dots through a thin GaAs(Sb)(N) capping layer"
  • [2011] MBE growth approaches for improving Sb-based In0.5Ga0.5As(Sb)/GaAs QDs
  • [2011] Mid-infrared photodetectors based on GaAsSb-capped InAs quantum dots
  • [2011] Modified optical properties of GaAs(Sb)(N)-capped InAs/GaAs quantum dots
  • [2011] Near infrared high efficiency InAs/GaAsSb QDLEDs: band alignment and carrier recombination mechanisms
  • [2011] Oxide based UV photodetection using schottky photodiodes
  • [2011] Processing and adsorption control in ZnO single nanowire photodetectors
  • [2011] Processing and adsorption control in ZnO single nanowire photodetectors
  • [2011] Room temperature photoluminescence of InGaAs Surface Quantum Dots
  • [2011] Size, strain, and band offset engineering in GaAs(Sb)(N)-capped InAs quantum dots for 1.3 - 1.55 µm LEDs and LDs
  • [2011] Synthesis and characterization of GaAsSb-capped InAs-based QDIPs
  • [2011] Tuning the size, strain and band offsets of InAs/GaAs quantum dots through a thin GaAs(Sb)(N) capping layer
  • [2010] A.GUZMÁN FERNÁNDEZ, R. GARGALLO-CABLLERO, MJ. MILLA, JM. ULLOA, A. HIERRO "Low optical degradation in InGaAsN/GaAs Quantum Dot p-i-n structures emitting from 1.1 to 1.55 µm" 16th International MBE Conference Berlín (German), 2010
  • [2010] D.F. REYES, D.L. SALES, R. GARGALLO-CABALLERO, J.M.ULLOA, A. HIERRO, A. GUZMÁN, D. GONZÁLEZ "Efecto de la incorporación de nitrógeno en puntos cuánticos enterrados de in In(Ga)As crecidos sobre GaAs" Congreso Nacional de Materiales, Zaragoza (Spain), 2010
  • [2010] D.F. REYES, D.L. SALES, R. GARGALLO-CABALLERO, J.M.ULLOA, A. HIERRO, A. GUZMÁN, D. GONZÁLEZ. "Effects of the nitrogen incorporation in the optical and structural characteristics of nitrogen-dilute InAsN QDs" European Materials Research Society Spring Meeting 2010 Strasbourg (France), 2010
  • [2010] J. M. ULLOA, M. DEL MORAL, M. BOZKURT, R. GARGALLO-CABALLERO, A. GUZMÁN, P. M. KOENRAAD, A. HIERRO "GaAsSb-capped InAs quantum dots: from enlarged quantum dot height to alloy fluctuations" Internacional Quantum Dot Conference 2010. Nottinghan (UK), 2010
  • [2010] J.M. ULLOA, P.M. KOENRAAD, M. HOPKINSON "Structural properties of GaAsN/GaAs quantum wells studied at the atomic scale by cross-sectional scanning tunneling microscopy". European Materials Research Society Spring Meeting 2010 Strasbourg (France), 2010
  • [2010] J.M. ULLOA, R. GARGALLO-CABALLERO, A. GUZMÁN, A. HIERRO . "GaAsSbN-capped InAs quantum dots for 1.3 - 1.55 µm emission" European Materials Research Society Spring Meeting 2010. Strasbourg (France), 2010
  • [2009] A. HIERRO, G. TABARES, J.M. ULLOA, E. MUÑOZ, A. NAKAMURA, T. HAYASHI, J. TEMMYO "Carrier compensation by deep levels in a-plane MgxZn1-xO Schottky photodiodes grown by RPE-MOCVD" Spring European Materials Research Society Conference 2009 Strasburg (France), 2009
  • [2009] A. HIERRO, G. TABARES, J.M. ULLOA, E. MUÑOZ, A. NAKAMURA, T. HAYASHI, J. TEMMYO "Impact of acceptor states in MgxZn1-xO Schottky photodiodes" Internacional Conference on II-VI Compounds, Saint Petersburg (Russia), 2009
  • [2009] A. NAKAMURA, T. HAYASHI, J. TEMMYO, A. HIERRO, G. TABARES, J.M.ULLOA, E.MUÑOZ "Schottky barrier contacts formed on polar-, nonporlar-MgxZn1-xO film grown by remote-plasma-enhanced MOCVD" Internacional Conference on II-VI Compounds, San Petersburgo, Rusia, 2009
  • [2009] G.TABARES, A.HIERRO, J.M.ULLOA, E.MUÑOZ, A. NAKAMURA, T. HAYASHI, J. TEMMYO "Responsivity and transient response of non-polar Au-MgXZn1-xO Schottky photodiodes" Spring European Materials Research Society Conference 2009 Strasburg (France), 2009
  • [2009] J.M. ULLOA , P.M. KOENRAAD, M. BONNET-EYMARD, A. LÉTOUBLON, D N. BERTRU "Effect of a lattice-matched GaAsSb capping layer on the structural properties of InAs/InGaAs/InP quantum dots" 15th European Molacular Beam Epitaxy Workshop Zakopane (Poland), 2009
  • [2009] J.M. ULLOA, M. DEL MORAL, R. GARGALLO, M. MONTES, A. GUZMAN, A. HIERRO, M. BOZKURT, P.M. KOENRAAD "1.3- 1.5 nm GaAsSb-capped InAs quantum dots: effect of the Sb content on the structural and optical properties" Spring European Materials Research Society Conference 2009 Strasburg (France), 2009
  • [2009] J.M. ULLOA, M. DEL MORAL, R. GARGALLO, M. MONTES, A. GUZMAN, A. HIERRO, M. BOZKURT, P.M. KOENRAAD "1.3- 1.5 µm GaAsSb-capped InAs quantum dots: effect of the Sb content on the structural and optical properties" 15th European Molacular Beam Epitaxy Workshop Zakopane (Poland), 2009
  • [2009] M. MONTES, A. HIERRO, J. M. ULLOA, A. GUZMÁN, M. AL KHALFIOUI, M. HUGUES, B. DAMILANO, J. MASSIES "1.3-1.5 µm emitting InAs quantum dot LEDs with (Ga, In)(N,As) and Ga(As,Sb) capping layers: a comparison" Spring European Materials Research Society Conference 2009 Strasburg (France), 2009
  • [2009] M. MONTES, A. HIERRO, J. M. ULLOA, M. AL KHALFIOUI, M. HUGUES, B. DAMILANO, J. MASSIES "InAs/(Ga,In)(N,As) Quantum Dot LEDs Emitting at 1.3-1.5 ìm" 7th Spanish Conference on Electron Devices 2009 Santiago Compostela (Spain), 2009
  • [2009] R. GARGALLO-CABALLERO, A. GUZMÁN, M. HOPKINSON, A. HIERRO, J. M. ULLOA, E. CALLEJA "Optoelectronic devices based on (Ga,In)(As,N) Quantum dots" 15th European Molacular Beam Epitaxy Workshop Zakopane (Poland), 2009
  • [2008] Atomistic Modelling of III-V Semiconductors: from a single tetrahedron to millions of atoms 17th Heterostructure Technology Workshop Venice (Italia), 2008
  • [2008] Electroluminescence analysis of 1.3-1.5 µm InAs quantum dot LEDs with (Ga,In)(N,As) capping layers 35th International Symposium on Compound Semiconductors (ISCS) Friburgo (Alemania), 2008
  • [2008] Enhancement of N incorporation into (Ga)InAsN quantum dots International Symposium on Compound Semiconductors (ISCS) Friburgo (Alemania), 2008
  • [2008] Mn and Fe doped InAs quantum dots studied by X-STM 35th International Symposium on Compound Semiconductors (ISCS) Rust (Alemania), 2008
  • [2008] The influence of Ga composition of GaInAsN QDs on N incorporation.
  • [2008] The influence of the Ga content on the N incorporation in InAsN and GaInNAs Quantum Dots 7th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS), Les Arcenaulx, Marseille (Francia), 2008
  • [2008] The use of Abel-Tersoff potentials in atomistic simulations of InGaAsSb/GaAs 8th International Conference on Numerical Simulation of Optoelectronic Devices Nottingham (UK), 2008
  • [2007] I. W. D. Drouzas, J. M. Ulloa, P. M. Koenraad, D. J. Mowbray, M. A. Migliorato, M. J. Steer, H.Y. Liu, M. Hopkinson "InAs self-assembled quantum dots capped with a GaAsSb strain reducing layer: Morphology of a nanostructure with novel optical properties" International Conference on Electronic Properties of Two-dimensional Systems and Modulated Semiconductor Structures (EP2DS 17- MSS 13) Génova (Italia) 15 al 20 de julio de 2007
  • [2007] I. W. D. Drouzas, J. M. Ulloa, P. M. Koenraad, D. J. Mowbray, M. A. Migliorato, M. J. Steer, H.Y. Liu, M. Hopkinson "InAs self-assembled quantum dots capped with a GaAsSb strain reducing layer: Morphology of a nanostructure with novel optical properties" UK Compound semiconductors 2007 Sheffield (UK) 4 al 5 de Julio de 2007
  • [2007] I. W.D. Drouzas, J. M. Ulloa, P. M. Koenraad, D. J. Mowbray, M. Steer, H. Y. Liu, M. Hopkinson "InAs self-assembled quantum dots with a GaAsSb strain reducing layer: Structural and compositional analysis by cross sectional scanning tunnelling microscopy" One day Quantum Dot Meeting 2007 Nottingham (UK) 2 al 5 de abril de 2007
  • [2007] J. M. Ulloa, C. Çelebi, P. Offermans, P.M. Koenraad, A. Simon, E. Gapihan, A. Letoublon, N. Bertru, I. Drouzas, D.J. Mowbray, M.J. Steer, M. Hopkinson "Capping of InAs quantum dots studied at the atomic scale by cross-sectional scanning tunneling microscopy" 14th European Molecular Beam Epitaxy Workshop Granada (España) 5 al 7 de marzo de 2007
  • [2007] J. M. Ulloa, C. Çelebi, P. Offermans, P.M. Koenraad, A. Simon, E. Gapihan, A. Letoublon, N. Bertru, I. Drouzas, D.J. Mowbray, M.J. Steer, M. Hopkinson "Capping of InAs quantum dots studied at the atomic scale by cross-sectional scanning tunneling microscopy" Microscopy of Semiconducting Materials XV Cambridge (UK) 2 al 5 de abril de 2007
  • [2007] J. M. Ulloa, P. M. Koenraad, E. Gapihan, A. Letoublon, N. Bertru: "Double capping of InAs/InP (311)B quantum dots studied by cross-sectional scanning tunneling microscopy" One day Quantum Dot Meeting 2007 Nottingham (UK) 2 al 5 de abril de 2007
  • [2007] J.H. Blokland, J.M. Ulloa, U. Zeitler, P.C.M. Christianen, P.M. Koenraad, D. Reuter, A.D. Wieck, J.C. Maan "Shell-filling and correlation effects of holes in InAs quantum dots" International Conference on Electronic Properties of Two-dimensional Systems and Modulated Semiconductor Structures (EP2DS 17- MSS 13) Genova (Italia) 15 al 20 de julio de 2007
  • [2007] J.M. Ulloa, A. Wierts, C. Çelebi, P.M. Koenraad, H. Boukari, L. Maingault, H. Mariette "Cross-Sectional Scanning Tunneling Microscopy on II-VI Semiconductor Multilayer Structures"13th International Conference on II-VI Compounds Jeju (Corea) 10 al 14 de septiembre 2007
  • [2007] J.M. Ulloa, P.M. Koenraad, E. Gapihan, A. Letoublon, N. Bertru, D. Fuster, Y. Gonzalez, L. Gonzalez "Atomic scale structural characterization of long wavelength InAs/InP quantum dots and wires" International Workshop on Long Wavelenght Quantum Dots: Growth and Applications Rennes (Francia) 5 al 6 de Julio de 2007
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• Premios
  • [2017] Evolution of InAs quantum dots/wetting layer system under different GaAs capping layer growth rates
  • [2016] Best poster of Symposium T in E-MRS Spreeng Meeting 2016
  • [2016] Best poster of Symposium T in E-MRS Spreeng Meeting 2016
  • [2016] Medalla joven investigador Real Academia de Ingeniería
  • [2016] Medalla joven investigador Real Academia de Ingeniería
  • [2016] Most outstanding student research work in the field of “New Materials and Concepts for Cells” in EU-PVSEC 2016
  • [2016] Most outstanding student research work in the field of New Materials and Concepts for Cells in EU-PVSEC 2016
  • [2016] Premio SCIEMAT Caja de Ingenieros
  • [2016] Premio SCIEMAT Caja de Ingenieros
  • [2016] Strain-balanced GaAsSb-GaAsN type-II superlattices as 1eV layer for efficient multi-junction solar cells
  • [2016] Thin GaAsSb capping layers for im-proved performance of InAs/GaAs quantum dot solar cells
  • [2007] José María Ulloa: Premio Extraordinario de Doctorado. Universidad Politécnica de Madrid, 2007
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• Proyectos de I+D+i
  • [2017] Novel Sb-containing nanostructure architectures for high efficiency photovoltaic applications
  • [2016] NanoSb-GBSC: Nuevas nanoestructuras basadas en Sb para aplicaciones fotovoltaicas de alta eficiencia
  • [2015] NANODILNIT: Aleaciones emergentes de nitruros diluidos III-V y nanoestructuras relacionadas para aplicaciones fotovoltaicas y de fotodetección de alta eficiencia
  • [2015] Zoterac: Zinc Oxide For TeraHertz Cascade Devices
  • [2014] ALEACIONES EMERGENTES DE NITRUROS DILUIDOS III-V Y NANOESTRUCTURAS RELACIONADAS PARA APLICACIONES FOTOVOLTÁICAS Y DE FOTODECTECCIÓN DE ALTA EFICIENCIA
  • [2011] DISPOSITIVOS NANOFOTÓNICOS PARA COMUNICACIONES ÓPTICAS
  • [2011] SUBVENCIÓN DEL PROGRAMA RAMÓN Y CAJAL DE JOSÉ MARIA ULLOA HERRERO.
  • [2011] SUBVENCIÓN DEL PROGRAMA RAMÓN Y CAJAL.- AYUDA ADICIONAL A JOSÉ MARIA ULLOA HERRERO.
  • [2010] DISPOSITIVOS NANOFOTONICOS PARA COMUNICACIONES OPTICAS
  • [2008] Ayudas financieras para la mejora de las infraestructuras científicas y tecnológicas singulares y para el acceso a las mismas
  • [2008] Ayudas para apoyar las líneas de I+D en el programa de creación y consolidación de grupos de investigación de la UPM. (Resolución de 19 de junio de 2007)
  • [2008] Desarrollo de láseres horizontales y de cavidad vertical para la banda de 1.35 a 1.55 micras basados en pozos cuánticos de GaInNAs/GaAs
  • [2008] Nano y microdispositivos basados en ZnO para la detección de H2 y UV (THINKOXIDE)
  • [2007] "Nanoestructuras de Semiconductores como Componentes para la Información Cuántica (NANIC)" Min. Educación y Ciencia, Acción Estratégica en Nanotecnología. NAN2004-09109-C04-02. (2005-2008).
  • [2007] "Tecnologías de Información Basadas en Optica Cuántica" Programa Consolider-Ingenio CSD2006-19.Anualidades(2006-2011)
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• Responsabilidades
  • [2016] Responsable de sala de Caracterización Optica
• Tesis Doctorales
  • [2019] Structures based on GaAs(Sb)(N) semiconductor alloys for high efficiency multi-junction solar cells
  • [2017] Tuning the properties of InAs/GaAs quantum dots through a modified capping layer: Application to optoelectronic devices
  • [2015] Propiedades Ópticas y Estructurales de nanoestructuras de Zn(Cd)(Mg)O