Portal de Transparencia

Actividad investigadora:

• Artículos en revistas
  • [2019] A design for an electromagnetic filter for precision energy measurements at the tritium endpoint
  • [2019] Advanced Graphene-Based Transparent Conductive Electrodes for Photovoltaic Applications
  • [2019] Advanced graphene-based transparent conductive electrodes for photovoltaic applications
  • [2019] Bio-inspired redesign of a hip prosthesis stem for improving geometrical optimization time
  • [2019] Effect of quasiparticle excitations and exchange-correlation in Coulomb drag in graphene
  • [2019] Neutrino physics with the PTOLEMY project: active neutrino properties and the light sterile case
  • [2019] Participation of women in doctorate, research, innovation, and management activities at Universidad Politecnica de Madrid: analysis of the decade 2006-2016
  • [2019] Reduced graphene oxide/polyaniline electrochemical supercapacitors fabricated by laser
  • [2019] Transparent electrodes based on graphene
  • [2018] Acoustically-driven surface and hyperbolic plasmon-phonon polaritons in graphene/h-BN heterostructures on piezoelectric substrates
  • [2018] Modification of strain and 2DEG density induced by wafer bending of AlGaN/GaN heterostructure: Influence of edges caused by processing
  • [2018] Thermal and Electrical Stability Assessment of AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors (MOS-HEMTs) With HfO2 Gate Dielectric
  • [2017] Effects of HfO2 Gate dielectric and KOH-based pre-treatments on AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors
  • [2017] Impact of 2D-Graphene on SiN Passivated AlGaN/GaN MIS-HEMTs Under Mist Exposure
  • [2017] Physics-Based Analytical Model for Input, Output, and Reverse Capacitance of a GaN HEMT With the Field-Plate Structure
  • [2017] Physics-based analytical model for input, output and reverse capacitance of a GaN HEMT with the field-plate structure
  • [2016] Automatic graphene transfer system for improved material quality and efficiency
  • [2016] Effects of Proton Irradiation on AlGaN/GaN based High Electron Mobility Transistors
  • [2016] Effects of high-k gate dielectrics on the electrical behavior of AlInN/GaN based diodes and HEMTs
  • [2016] Electro-optical characterization of IC compatible microcantilevers
  • [2016] Improvement of the adhesion between polyaniline and commercial carbon paper by acid treatment and its application in supercapacitor electrodes
  • [2016] Physics-based Analytical Model for Input, Output and Reverse Capacitance of a GaN HEMT with the Field-plate Structure
  • [2016] Polyaniline nanofiber sponge filled graphene foam as high gravimetric and volumetric capacitance electrode
  • [2016] Thermal Assessment of AlGaN/GaN MOS-HEMTs on Si Substrate Using Gd2O3 as Gate Dielectric
  • [2015] Electro-optical characterization of IC compatible microcantilevers
  • [2015] Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar (11(2)over-bar2) GaN templates
  • [2015] Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures
  • [2015] Graphene foam functionalized with electrodeposited nickel hydroxide for energy applications
  • [2015] Improvement of the adhesion between polyaniline and commercial carbon paper by acid treatment and its application in supercapacitor electrodes.
  • [2015] Method for extracting relevant electrical parameters from graphene field-effect transistors using a physical model
  • [2015] Post-CMOS compatible high-throughput fabrication of AIN-based piezoelectric microcantilevers
  • [2015] Simulation of temperature and electric field-dependent barrier traps effects in AlGaN/GaN HEMTs
  • [2015] Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd2O3 as gate dielectric
  • [2015] Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries
  • [2014] Analysis of InAl(Ga)N/GaN wet-etching by structural, morphological and electrical methods
  • [2014] Graphene foam for high performance capacitors
  • [2014] Impact of device geometry at different ambient temperatures on the self-heating of GaN-based HEMTs
  • [2014] Influence of fabrication steps on optical and electrical properties of InN thin films
  • [2014] MnO2-Based Electrochemical Supercapacitors on Flexible Carbon Substrates
  • [2014] Physical Model for GaN HEMT Design Optimization in High Frequency Switching Applications
  • [2014] PostCMOS compatible sacrificial layers for aluminum nitride microcantilevers
  • [2014] Thermionic-Field Emission Barrier Between Nanocrystalline Diamond and Epitaxial 4H-SiC
  • [2013] Application of GaN FET in 1MHz Large Signal Bandwidth Power Supply for Radio Frequency Power Amplifier
  • [2013] Coupling Light into Graphene Plasmons through Surface Acoustic Waves
  • [2013] Coupling Light into Graphene Plasmons through Surface Acoustic Waves
  • [2013] Diamond underlayer microstructure effect on the orientation of AlN piezoelectric layers for high frequency SAW resonators by TEM
  • [2013] Diamond underlayer microstructure effect on the orientation of AlN piezoelectric layers for high frequency SAW resonators by TEM
  • [2013] Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy
  • [2013] Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy
  • [2013] Gate oxide stability of 4H-SiC MOSFETs under on/off-state bias-temperature stress
  • [2013] Gate oxide stability of 4H-SiC MOSFETs under on/off-state bias-temperature stress
  • [2013] High precision pressure sensors based on SAW devices in the GHz range
  • [2013] High precision pressure sensors based on SAW devices in the GHz range
  • [2013] Impact of AlN Spacer on Metal-Semiconductor-Metal Pt-InAlGaN/GaN Heterostructures for Ultraviolet Detection
  • [2013] Impact of AlN Spacer on Metal?Semiconductor?Metal Pt?InAlGaN/GaN Heterostructures for Ultraviolet Detection
  • [2013] Impact of Intrinsic Stress in Diamond Capping Layers on the Electrical Behavior of AlGaN/GaN HEMTs
  • [2013] Impact of Intrinsic Stress in Diamond Capping Layers on the Electrical Behavior of AlGaN/GaN HEMTs
  • [2013] Investigation of AlInN barrier ISFET structures with GaN capping for pH detection
  • [2013] Investigation of AlInN barrier ISFET structures with GaN capping for pH detection
  • [2013] Simple and Accurate Method to Estimate Channel Temperature and Thermal Resistance in AlGaN/GaN HEMTs
  • [2013] Simple and Accurate Method to Estimate Channel Temperature and Thermal Resistance in AlGaN/GaN HEMTs
  • [2013] Simulation of thermal management in AlGaN/GaN HEMTs with integrated diamond heat spreaders
  • [2013] Simulation of thermal management in AlGaN/GaN HEMTs with integrated diamond heat spreaders
  • [2013] Simulation of thermal management in AlGaN/GaN HEMTs with integrated diamond heat spreaders
  • [2013] Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures
  • [2013] Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures
  • [2013] Systematic optical characterization of two-dimensional electron gases in InAlN/GaN-based heterostructures with different in content
  • [2012] Fabrication of sub-100 nm IDT SAW devices on insulating, semiconducting and conductive substrates
  • [2012] Four Decades of Studying Global Linear Instability: Problems and Challenges
  • [2012] High precision pressure sensors based on SAW devices in the GHz range
  • [2012] Impact of N-2 Plasma Power Discharge on AlGaN/GaN HEMT Performance
  • [2012] Impact of N2 plasma power discharge on AlGaN/GaN HEMT performance
  • [2012] Investigation of AlInN barrier ISFET structures with GaN capping for pH detection
  • [2012] Nanocrack-induced leakage current in AlInN/AlN/GaN
  • [2012] Nanocrack-induced leakage current in AlInN/AlN/GaN
  • [2012] Optimization of AlN thin layers on diamond substrates for high frequency SAW resonators
  • [2012] Optimization of AlN thin layers on diamond substrates for high frequency SAW resonators
  • [2012] Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures
  • [2012] Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures
  • [2012] Super-High-Frequency SAW Resonators on AlN/Diamond
  • [2012] Super-High-Frequency SAW Resonators on AlN/Diamond
  • [2012] Vertical conduction properties of few-layer epitaxial graphene / n-type 4H-SiC heterojunctions at cryogenic temperatures
  • [2011] Effect of substrate-target distance and sputtering pressure in the synthesis of AlN thin films
  • [2011] Fabrication of sub-100 nm IDT SAW devices on insulating, semiconducting and conductive substrates
  • [2011] Influence of temperature and drain current on source and drain resistances in AlGaN/GaN HEMTs
  • [2011] Temperature and time dependent threshold voltage characterization of AlGaN/GaN high electron mobility transistors
  • [2011] Temperature and time dependent threshold voltage characterization of AlGaN/GaN high electron mobility transistors
  • [2010] A.VILALTA-CLEMENTE, G. R.MUTTA, M. P. CHAUVAT, M. MORALES, J. L. DOUALAN, P. RUTERANA, J. GRANDAL, M. A. S ÁNCHEZ-GARCIA, F. CALLE, E. VALCHEVA, K. KIRILOV, ''Investigation of InN layers grown by molecular beam epitaxy on GaN templates'' Physica Status Solidi (a), 207, 1079-1082 (2010)
  • [2010] G.F. IRIARTE, J.G. RODRÍGUEZ, F. CALLE "IC Compatible Synthesis of AlN for Energy Harvesting Applications" Revista Materia, ISSN 1517-7076, 15 - 4, 4th quarter of 2010. (2010)
  • [2010] G.F. IRIARTE, J.G. RODRÍGUEZ, F. CALLE ''Synthesis of c-axis oriented AlN thin films on different substrates: A review" Materials Research Bulletin 45, 1039-1045 (2010)
  • [2010] Investigation of InN layers grown by molecular beam epitaxy on GaN templates
  • [2010] J. PEDRÓS, F. CALLE, R. CUERDO, J. GRAJAL, Z. BOUGRIOUA "Voltage tunable surface acoustic wave phase shifter on AlGaN/GaN" Applied Physics Letters 96, 123505 (2010) .
  • [2010] Synthesis of c-axis oriented AlN thin films on different substrates: A review
  • [2010] Voltage tunable surface acoustic wave phase shifter on AlGaN/GaN
  • [2009] E. SILLERO, O.A. WILLIAMS, V. LEBEDEV, V. CIMALLA, C. C. RÖHLIG, C. E. NEBEL, F. CALLE "High Young's modulus in nanocrystalline diamond films measured by force deflection and magnetomotive spectroscopy" Journal of Micromechanics and Microengineering 19, 115016 - 6 (2009)
  • [2009] E. SILLERO, O.A. WILLIAMS, V. LEBEDEV, V. CIMALLA, C. C. RÖHLIG, C. E. NEBEL, F. CALLE "Static and dynamic determination of the mechanical properties of nanocrystalline diamond micromachined structures" Journal of Micromechanics and Microengineering 19, 115016 - 6 (2009)
  • [2009] R. CUERDO, E. SILLERO, M. F. ROMERO, M. J. UREN, M.-A. DI FORTE POISSON, E. MUÑOZ, F. CALLE "High Temperature Microwave Performance of Submicron AlGaN/GaN HEMTs on SiC" IEEE Electron Device Letters, 30, 808-810 (2009)
  • [2009] R. CUERDO, Y. PEI, Z. CHEN, S. KELLER, S. P. DENBAARS, F. CALLE, U. K. MISHRA, "The Kink Effect at Cryogenic Temperatures in Deep Submicron AlGaN/GaN HEMTs" IEEE Electron Device Letters, 30, 209-212 (2009)
  • [2008] AIGaN/GaN-Based Saw Delay-Line Oscillators
  • [2008] Effects of N2 plasma pre-treatment on the SiN Passivation of AlGaN/GaN HEMT
  • [2008] Fabrication and stress relief modelling of GaN based MEMS test structures grown by MBE on Si(111)
  • [2008] High temperature assessment of nitride-based devices
  • [2008] Temperature-dependent High-Frequency Performance of Deep Submicron Ion-Implanted AlGaN/GaN HEMTs
  • [2007] A. NAVARRO, C. RIVERA, R. CUERDO, J.L. PAU, J. PEREIRO, F. CALLE, E. MUÑOZ "Noise study in photodiodes based on InGaN/GaN MQW" IEEE Electron Devices, Conf Proc- 2007 Spanish Conference, 321-324, ISBN: 1-4244-0868-7 (2007) ISSN: 0741-3106
  • [2007] A. NAVARRO, C. RIVERA, R. CUERDO, J.L. PAU, J. PEREIRO, F. CALLE, E. MUÑOZ "Noise study in photodiodes based on InGaN/GaN MQW" 2007 Spanish Conference on Electron Devices IEEE Proceedings 321-324, ISBN: 1-4244-0868-7 (2007)
  • [2007] E. SILLERO, D. LÓPEZ-ROMERO, F. CALLE, M. EICKHOFF, J. F. CARLIN, N. GRANDJEAN, M. ILEGEMS "Selective etching of AlInN/GaN heterostructures for MEMS technology" Microelectronic Engineering 84, 1152-1156 (2007) ISSN: 0167-9317
  • [2007] J. PEDRÓS, Y. TAKAGAKI, T. IVE, M. RAMSTEINER, O. BRANDT, U. JAHN, K. H. PLOOG, F. CALLE "Exciton impact-ionization dynamics modulated by surface acoustic waves in GaN" Physical Review B, 75, 115305 (2007) ISSN: 1098-0121
  • [2007] R. CUERDO, J. PEDRÓS, A. NAVARRO, A.F. BRAÑA, J.L. PAU, E. MUÑOZ, F. CALLE "High temperature assessment of nitride-based devices" Journal of Materials Science: Materials in Electronics, (published online) (2007) ISSN: 0957-4522
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• Conferencias invitadas en congresos
  • [2019] Graphene Devices for Energy Applications
  • [2019] Improved energy consumption of LEACH protocol through multi-hop in the cluster Seung
  • [2019] Nanoelectrònica per a la informació i comunicacions
  • [2018] Graphene-based composite supercapacitors for enhanced capabilities
  • [2017] Supercapacitors based in 3D graphene foams
  • [2016] 3D Graphene for energy storage
  • [2016] Active plasmonics in graphene using surface acoustic waves
  • [2016] Supercapacitors based in 3D graphene foams
  • [2016] Surface acoustic wave-assisted plasmonics in graphene
  • [2015] Fabricación de grafeno mediante depósito en fase de vapor
  • [2015] Graphene foams
  • [2015] Graphene-based supercapacitors
  • [2015] Graphene: technology and aplications
  • [2014] Graphene for Energy Storage
  • [2013] Correlation between graphene properties and substrate grain structure in CVD fabrication
  • [2013] Energy storage systems based on graphene
  • [2013] Tecnología para nanoelectrónica de grafeno
  • [2012] Acoustoelectronics in AlGaN/GaN: from frequency control to single-electron transport applications
  • [2012] Congreso Organizado. 21st European Heterostructure Technology Workshop, HETECH 2012
  • [2012] Congreso Organizado:36th Workshop on Compound Semiconductors and Integrated Circuits, WOCSDICE2012
  • [2012] High frequency AlN/diamond SAW devices
  • [2012] Nanotechnology for high frequency communications: nitrides and graphene
  • [2012] Short term applications of graphene
  • [2011] High temperature assessment of Al(GaIn)N/GaN HEMTs for RF and power applications
  • [2011] Surface acoustic waves III-nitrides: from materials to applications
  • [2011] Technology for graphene-based nanoelectronic devices
  • [2011] Thermal assessment of Al(GaIn)N/GaN HEMTs
  • [2011] Time-Reversal-Based Multipath Mitigation Technique for Entropy Minimization of SAR Images
  • [2010] M. TADJER, F. CALLE "Overview III-N HEMTs: device design" Consolider RUE Workshop on WBS for Power Applications. CNM, Barcelona, Barcelona (Spain) 2010.
  • [2010] F. CALLE "KORRIGAN: III-Nitrides 2DEG Structures and HEMTs- Technology and Characterization" Jornada Tecnológica: Materiales de Gap ancho y Electrónica de potencia. CDTI Madrid (Spain) 2010
  • [2010] F. CALLE, M. TADJER. "Overview III-N HEMTs: materials and technology". Consolider RUE Workshop on WBS for Power Applications, CNM Barcelona (Spain) 2010.
  • [2009] R CUERDO, E, MUÑOZ,F. CALLE "Performance of AlGaN-GaN HEMTs at high temperature" ESA-MoD Workshop on GaN Microwave Component Technologies. Ulm (Germany), 2009
  • [2009] R. CUERDO, E.MUÑOZ, F. CALLE "Characterisation of Nitride-based HEMTs at high temperatures". ESA-MoD Workshop on GaN Microwave Component Technologies. Ulm (Germany), 2009
  • [2007] F. CALLE Nanotecnología para la información y las comunicaciones Jornadas AUTOMEC, Universidad Miguel Hernández. Elche, Alicante. Marzo 2007.
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• Creación de empresas
  • [2014] Graphene Light en abril de 2014
• Cursos, seminarios y tutoriales
  • [2019] Batteries research activities at Korea Institute of Science and Technology
  • [2019] Cuentanos tu tesis.-Entrega de Premios.
  • [2019] Exploring new electrode materials for sodium-ion batteries
  • [2019] Natural proteinaceous nanoparticles for theranostic purposes
  • [2019] Patentes y Derechos de Autor. Lo que todo investigador debe saber
  • [2019] Using Nanostructured materials to improve high capacity and fast charging battery materials
  • [2018] Electromagnetic waves in carbon nanostructures. Dr. Maksimenko SA
  • [2018] 20 YEARS OF UPM-UNIV.SHIZUOKA COOPERATION on Photonic Devices based on ZnO and RELATED ALLOYS.- Prof. Jiro Temmyo
  • [2018] Curso De la Nanociencia a la Nanotecnología: Luces y Sombras del Control de la Materia a Escala Atómica
  • [2018] Highly fabrication tolerant polarization beam splitters.- Dr. Nicolás Abadía
  • [2018] Magnetic Phase Interference in Artificial Magnetic Lattices: Functions and Applications to Optical, High-Frequency, and Spin Wave Devices.- Dr. Mitsuteru Inoue
  • [2018] Nano-structured optoelectronic devices.- Dra. Sudha Mokkapati
  • [2018] Nanoscale Engineering of Materials and Interfaces for High Performance Rechargeable Batteries.- Dr. Vinodkumar Etacheri
  • [2017] Seminario de ponente:- Prof. Hiroto Sekiguchi (Toyohashi University of Technology) Growth of Nitride-based Nanocolumn for Optical Device and Monolithic Integration of Si-MOSFET and GaN micro-LED
  • [2016] Séptima edición del Finde Científico en la sede de Alcobendas del Museo Nacional de Ciencia y Tecnología. 'El Grafeno'.
  • [2015] Actual technological applications of graphene.- Seminarios Internacionales de Fronteras de la Ciencia de Materiales
  • [2015] Large-scale synthesis of ultrathin layered MoO3 by van der Waals epitaxy
  • [2015] Máster de Ingeniería de Materiales 'New Materials and Emerging Technologies
  • [2015] Technology and characterization of GaN-HEMTs devices: high temperature and trapping effects
  • [2013] "CURSO DE VERANO UPM: Emerging Applications of Graphene", 15 y 16 de junio de 2013.
  • [2013] Beyond self-assembly: Advanced fabrication and characterization methods applied to unconventional semiconductor nanostructures. SEMINARIO INVITADO IMPARTIDO POR BENITO ALEN
  • [2013] Nanomechanics and strain engineering in atomically thin MoS2. SEMINARIO INVITADO IMPARTIDO POR ANDRES CASTELLANOS-GÓMEZ
  • [2012] Dr. Andres Castellanos-Gómez. Kavli Institute of NanoScience, TU Delft, Netherlands
  • [2012] Prof. H.L. Hartnagel. Fachgruppe Mikrowellenelektronik, Institute for Microwave and Optics Technical University Darmstadt, Darmstadt, Germany. "Terahertz Studies towards Fast Imaging"
  • [2011] AlN - nanodiamond based MEMS and NEMS. Prof. Vadim Lebedev
  • [2011] Chemical sensing with AlGaN/GaN structures. Prof. Volker Cimalla
  • [2011] El grafeno y sus propiedades únicas.-Prof. Dr. Francisco Guinea
  • [2010] Dr. FILIP TUOMISTO.- "Defect spectroscopy with positrons: what can we learn on III-nitrides and other compound semiconductors" 16/02/2010- -Positron research group leader Academy Research Fellow, Docent Department of Applied Physics Aalto University, Finland-Espoo - (Finland)
  • [2010] VERONICA GAO ZHAN. "Synthesis and Characterization of quasi-single-crystal ZnO films on ZnO coated Silicon Substrates". 19/06/2010. ISOM-ETSIT-UPM. Madrid (España)
  • [2010] YOLANDA CAMPOS.- "Multiplicadores de frecuencia MMIC para ondas milimétricas" 12/02/2010- -Universidad de Extremadura-Extremadura-(Spain)
  • [2009] D. Abelardo León González "Centro de Investigación Experimental en Aplicaciones y Servicios de Inteligencia Ambiental" Grupo de investigación Life Supporting Technologies, Departamento de Tecnología Fotónica, E.T.S.I. Telecomunicación, Universidad Politécnica de Madrid (Spain) June 19th, 2009
  • [2009] D. Alessio Fioravanti "Controlling Chronic Diseases related to Metabolic Disorders" Grupo de investigación Life Supporting Technologies, Departamento de Tecnología Fotónica, E.T.S.I. Telecomunicación, Universidad Politécnica de Madrid (Spain) June 19th, 2009
  • [2009] D. Miguel del Pie "Advanced Measurements-Signal Integrity and more" LeCroy, Madrid (Spain)
  • [2009] Dr. Ian Watson "3-Dimensional Microstructures in GaN Fabricated Using Sacrificial AlInN Layers" Institute of Photonics, University of Strathclyde, Glasgow (United Kingdom) June 26th, 2009
  • [2009] Dª. Jacqueline L. Hall "Temperature Effects during the Growth of In-rich InGaN Films by Plasma-Assisted Molecular Beam Epitaxy" School of Physics & Astronomy, Univ. of Nottingham, Nottingham (United Kingdom) July 8th, 2009
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• Estancias y sabáticos recogidos en programas oficiales
  • [2019] Estancia Erasmus de Sunil Kumar
  • [2015] Estancia por Programa Erasmus.- AK Lalith Kishore. Lugar de origen: Indian Institute of Technology
  • [2015] Estancia por Programa Erasmus.- Vinayak Chavan. Lugar de origen: Indian Institute of Thechnology, Bombay, India
  • [2012] A 1/f noise measurement system was designed, set up and tested. An automated graphene transfer system was developed
  • [2012] CONSULADO CHINO.- GAO ZHAN
  • [2012] CONSULADO CHINO.- GAO ZHAN
  • [2012] ERASMUS MUNDUS, Doctorado.- ASHU WANG
  • [2012] ERASMUS MUNDUS, Doctorado.- ASHU WANG
  • [2012] ESTANCIA ERASMUS MUNDUS.- DR. SURENDRA SHRESTHA
  • [2012] ESTANCIA ERASMUS MUNDUS.- DR. SURENDRA SHRESTHA
  • [2012] ESTANCIA INVESTIGADORA DE ALBERTO BOSCA MOJENA. A 1/f noise measurement system was designed, set up and tested. An automated graphene transfer system was developed
  • [2012] ESTANCIA INVESTIGADORA DE TOMMASO BRAZZINI.-The study of basic properties unintentionally-doped self-assembled InN nanocolumns.
  • [2012] ESTANCIA INVESTIGADORA DR. MARKO JAK TADJER- EN NAVAL RESEARCH LABORATORY
  • [2012] ESTANCIA INVESTIGADORA DR. MARKO JAK TADJER- EN NAVAL RESEARCH LABORATORY
  • [2012] ESTANCIA INVESTIGADORA EN NAVAL RESEARCH LABORATORY.- Dr. MARKO JAK TADJER
  • [2012] The study of basic properties unintentionally-doped self-assembled InN nanocolumns.
  • [2010] ASHU WANG.- ERASMUS MUNDUS 2009-2013, estancia de larga duración de 34 meses desde el 20 de mayo 2010
  • [2010] KAI WANG, ERASMUS MUNDUS 2009-2013, estancia larga duración 6 meses desde el 2 de marzo de 2010
  • [2008] ESTANCIA DE EUGENIO SILLERO: Centro: Instituto de física aplicada de estado sólido (IAF), Fraunhofer Gesellschaft Localidad: Friburgo País Alemania
  • [2008] ESTANCIA DE ROBERTO CUERDO BRAGADO: Santa Bárbara, Estados Unidos Centro: Department of Electrical and Computer Engineering, University of California Santa Barbara Investigador responsable: Umesh Mishra
  • [2007] Estancia del Doctorando D. Roberto Cuerdo Bragado (becario UPM), en Department of Electrical and Computer Engineering, University of California Santa Bárbara, bajo la supervisión del Prof. Humees Mishra, para el estudio a baja temperatura y radiofrecuencia de transistores de alta movilidad electrónica sobre estructuras AlGaN/GaN.
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• Otras Publicaciones
  • [2018] La revista Europhysics News (vol. 49 n. 4) de la European Physical Society destaca en su reseña titulada 'Nanoscale light trapping in graphene/h-BN by sound waves' el reciente artículo 'Acoustically-driven surface and hyperbolic plasmon-phonon polaritons in graphene/h-BN heterostructures on piezoelectric substrates', J. Phys. D: Appl. Phys. 51, 204004 (2018), publicado por los investigadores del ISOM-UPM: Rajveer Fandan, Jorge Pedrós, Alberto Boscá, Javier Martínez y Fernando Calle
  • [2018] PTOLEMY: A Proposal for Thermal Relic Detection of Massivectional Detectie Neutrinos and Diron of MeV Dark Matter, arXiv:1808.01892 [physics.ins-det] (2018).
  • [2017] Equipo investigador del proyecto de investigación galardonado en el XVIII Concurso Nacional de Ayudas a la Investigación en Ciencias de la Vida y de la Materia de la Fundación Ramón Areces, que lleva por título: 'Biomateriales basados en grafeno-macrófagos: caracterización funcional para su aplicación en patología cardiovascular'. IP: Lisardo Boscá Gomar
  • [2016] Grupo de Dispositivos Semiconductores del ISOM: El GRAFENO
  • [2016] La Universidad Politécnica de Madrid en el Finde Científico. Tecnología electrónica del grafeno, ¿quieres conocerla?. Museo Nacional de Ciencia y Tecnología,MUNCYT
  • [2016] Nueva web sobre Nanotecnología en la UPM
  • [2016] Simposio Internacional: Materiales bidimensionales: explorando los límites de la física y la ingeniería. Ciencias de la Vida y de la Materia, Madrid, 22 y 23 de junio de 2016.
  • [2015] Otras Redes de participación del ISOM-UPM; Plataforma Tecnológica Española de Materiales Avanzados y Nanomateriales http://www.materplat.com/ Prof. Fernando Calle fernando.calle@upm.es
  • [2014] Diamond-coated high density vias for silicon substrate-side thermal management of GaN HEMTs,
  • [2014] La revolución del grafeno
  • [2014] Physical model for GaN HEMT design optimization in high frequency switching applications,
  • [2014] Physical model for GaN HEMT design optimization in high frequency switching applications, ESSDERC/ESSCIRC, Venice, Italy
  • [2014] Physical modeling and optimization of a GaN HEMT design with a field plate structure for high frequency application,
  • [2013] EL ISOM ORGANIZA EL CURSO DE VERANO UPM 2013 TITULADO: 'EMERGING APPLICATIONS OF GRAPHENE' Dirigido a estudiantes de 3° y 4° de grado y de máster y doctorado de ingenierías y ciencias, así como a todos los interesados en este campo de tanto interés científico y tanto potencial industrial. Contamos con la participación de invitados muy reconocidos de la academia (ICMM-CSIC, ICFO, MIT, Nanogune, Technical University Munich, UPM) y de la empresa (Airbus, Avanzare, Graphenea, Nokia).
  • [2010] DR. ENRIQUE CALLEJA et al " La iluminación del futuro se basará en LEDs" http://agaudi.wordpress.com/2010/02/01/la-iluminacion-del-futuro-se-basara-en-leds/
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• Otros méritos
  • [2019] Prof. Fernando Calle y Dr. Alberto Boscá dirigen el TFG de D. Mario Aragonés Rodríguez titulado: Análisis y eliminación de las impurezas generadas en grafeno fabricado mediante depósito químico de vapor
  • [2019] Prof. Fernando Calle, Miembro de Comité: 43th Workshop on Compound Semiconductors and Integrated Circuits, WOCSDICE Cabourg (France), 17-19 June 2019, y Applied Nanotechnology and Nanoscience International Conference 2019, ANNIC. Paris (France), 18-20 November 2019
  • [2019] Prof. Fernando Calle. Nº de sexenios: 6, incluyendo el sexenio de Transferencia
  • [2017] Member of Program Commitee D: WBG devices. European Symp.on reliability of electronic devices failure physics and analysis 2017, ESREF. Bordeaux (France).21-24 September 2017
  • [2017] Member of Program Commitee: International Conference on Nitride Semiconductors 2017, ICNS. Strasbourg (France), July 2017
  • [2017] Member of the Scientific Commitee, Applied Nanotechnology and Nanoscience International Conference 2017, ANNIC. Roma, Italy. 8-10 October 2017
  • [2017] Member of the Steering Committee: 41th Workshop on Compound Semiconductors and Integrated Circuits, WOCSDICE. Las Palmas, Spain, 21-24 May 2017
  • [2017] Miembro del Comité Técnico Organizador: 11ª Conferencia de Dispositivos Electrónicos Barcelona, Spain, 2017
  • [2016] Adjunto a la Vicerrectora para Doctorado e Investigación de la UPM (desde 28-4-2016)
  • [2016] Automatic Transfer of 2D Materials to Flexible Substrates and Benchmarking as Chemical Sensors. Entidad: MISTI Global Seed Funds. Código: (2016-2017). IP: I.P. Tomás Palacios (MIT) y F. Calle (UPM). $27500
  • [2016] Graphene NANOcomposites REActors at preindustrial Technology readiness, nanoGREAT (EIT Raw Materials. 2016-2018). Entidad: KIC Added Value Activities (KAVA) Network of Infrastructure. Código: (2016-2018). IP: I.P.-M. Zen (coordinador), F. Calle (ISOM-UPM).
  • [2016] Graphene-macrophage biomaterials: functional characterization for the use in cardiovascular pathologies (Biomateriales basados en grafeno-macrófagos: caracterización funcional para su aplicación en patología cardiovascular) Fundación Ramón Areces 2016.
  • [2016] Member of the Scientific Commitee.-Applied Nanotechnology and nanoscience International Conference 2016, ANNIC. Barcelona, 9-11 November 2016
  • [2016] Member of the Steering Committee.- 40th Workshop on Compound Semiconductors and Integrated Circuits, WOCSDICE.Aveiro (Portugal), 6-8 June 2016
  • [2016] Miembro electo del Claustro de UPM (desde enero 2011)
  • [2016] Patrono institucional del IMDEA Nanociencia (desde 16 de junio de 2016)
  • [2016] Presidente de la Comisión de Doctorado de la UPM (desde mayo 2016)
  • [2015] 39th Workshop on Compound Semiconductors and Integrated Circuits (WOCSDICE)- Moderador Sesión: Advanced Materials. Fernando Calle Gómez
  • [2015] 10ª Conferencia de Dispositivos Electrónicos.- Miembro del Comité Técnico Organizador. Fernando Calle Gómez
  • [2015] 39th Workshop on Compound Semiconductors and Integrated Circuits, WOCSDICE- Member of the Steering Committee. Fernando Calle Gómez
  • [2015] A. Ladrón de Guevara, A. Boscá, J. Pedrós, F. Calle, J. Martínez.- Premio ''Best Student Presentation Award for the poster entitled 'Graphene devices fabricated by laser'' 10th Spanish Conference on Electron Devices (CDE), Feb 11-13, 2015, Madrid (Spain).
  • [2015] Director del GDS del ISOM.- Dr. Fernando Calle Gómez
  • [2015] Nanotechnology for Security and Defense Int. Conf., NanoSD2015- Moderador Sesión: Applications Bio, Graphene. Fernando Calle Gómez
  • [2013] 1er Congreso Nacional I+D en Defensa y Seguridad DESEi+d 2013.-Miembro del Comité Científico y Técnico
  • [2013] 22th European Heterostructure Technology Workshop, HETECH 2013. Member of the Steering Committee
  • [2013] 37th Workshop on Compound Semiconductors and Integrated Circuits, WOCSDICE2013.- Member of the Steering Committee
  • [2013] 9ª Conferencia de Dispositivos Electrónicos.- Miembro del comité organizador
  • [2012] 21st European Heterostructure Technology Workshop, HETECH 2012. Barcelona, 5-7 noviembre, 2012.
  • [2012] 36th Workshop on Compound Semiconductors and Integrated Circuits, WOCSDICE.Porquerolles (Francia), 28-30 mayo 2012.
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• Patentes
  • [2019] Cathode for lithium batteries
  • [2019] Hierarchical composite structures based on graphene foam or graphene-like foam
  • [2019] Method for producing graphene with tunable properties by a multi-step termal reduction process
  • [2018] Cathode for lithium batteries
  • [2018] Direct Process for fabrication of functionalised 3D Graphene foams
  • [2018] Hierarchical composite structures based on graphene foam or graphene-like foam
  • [2018] Method for producing graphene with tunable properties by a multi-step thermal reduction process
  • [2017] Cathode for lithium batteries. Referencia: 15738054.4-1373/3117474. 15/02/2017. Repsol-UPM
  • [2017] Cathode for lithium batteries. Referencia: 15738054.4-1373/3117474. 15/02/2017. Repsol-UPM
  • [2017] Cathode for lithium batteries. Referencia: 15738054.4-1373/3117474. 15/02/2017. Repsol-UPM
  • [2017] Direct process for fabrication of functionalised 3D graphene foams. Referencia: 16382228-31375. Repsol S.A-UPM
  • [2017] Direct process for fabrication of functionalised 3D graphene foams. Referencia: 16382228-31375. Repsol S.A-UPM
  • [2017] Direct process for fabrication of functionalised 3D graphene foams. Referencia: 16382228-31375. Repsol S.A-UPM
  • [2017] Hierarchical composite structures based on graphene foam or graphene-like foam. 14382428.2-1351. Repsol S.A-UPM
  • [2017] Hierarchical composite structures based on graphene foam or graphene-like foam. 14382428.2-1351. Repsol S.A-UPM
  • [2017] Hierarchical composite structures based on graphene foam or graphene-like foam. 14382428.2-1351. Repsol S.A-UPM
  • [2017] Method for producing graphene with tunable properties by a multi-step termal reduction process. 15763371.0-1375/3148933
  • [2017] Method for producing graphene with tunable properties by a multi-step termal reduction process. 15763371.0-1375/3148933
  • [2016] Direct process for fabrication of functionalised 3D graphene foams
  • [2015] Procedimiento de transferencia de nanocapas y aparato de realización del mismo
  • [2014] Cathode for lithium batteries.N. de solicitud: P 6400/2013. Patent Application Nº PCT/ES2014/070859. Inventores. A. Boscá Mojena, J. Pedrós Ayala, J. Martínez Rodrigo, F. CALLE GÓMEZ, T. Palacios Gutiérrez. REPSOL-UPM
  • [2014] Hierarchical composite structures based on graphene foam or graphene-like foam. N. de solicitud: EP14382428. Inventores: J. Pedrós, A. Boscá, J. Martínez, F. CALLE GÓMEZ, M.S. Ruiz-Gómez, L. Pérez, M.V. Barranco, A. Páez Dueñas, J. García San Luis. REPSOL-UPM
  • [2014] Method for producing graphene with tunable properties by a multi-step thermal reduction process N. de solicitud: EP14382352.4, Inventores: A. Páez Dueñas, J. García San Luis, M.P. Alvarez Rodríguez, M. Granda, M.C. Blanco Rodríguez, R. Santamaría Ramírez, M.P. Blanco, M.L. Fernández, R.M. Ménendez López, F. CALLE GÓMEZ. REPSOL-UPM
  • [2013] Procedimiento de transferencia de nanocapas y aparato de realización del mismo
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• Ponencia en Congresos
  • [2019] Almacenamiento de Hidrógeno en nuevos materiales grafénicos
  • [2019] Bio-inspired redesign of a hip prosthesis stem for improving geometrical optimization time
  • [2019] Bio-inspired redesign of a hip prosthesis stem for improving geometrical optimization time
  • [2019] Bioinspired redesign of a hip prosthesis stem for improving geometrical optimization time
  • [2019] Challenges of CVD graphene integration into transparent electrodes for green energy solutions
  • [2019] Defect assessment in graphene through water-soluble polymers
  • [2019] Effect of graphene specific area on the mechanical properties of a PMMA bone cement
  • [2019] Evaluation of fast thermal synthesis of reduced graphene oxides
  • [2019] Imaging techniques for characterizing the nucleation dynamics in CVD graphene
  • [2019] Imaging techniques for characterizing the nucleation dynamics in CVD graphene
  • [2019] Optimizing the methodology for the production of reduced graphene oxides (rGO) by laser irradiation, chemical, thermal, and combined routes
  • [2019] Reduced graphene oxide/polyaniline electrochemical supercapacitors fabricated by laser
  • [2018] Acoustically-driven surface and hyperbolic plasmon-phonon polaritons in graphene/h-BN heterostructures on piezoelectric substratesed by Surface Acoustic Waves
  • [2018] Acoustically-driven surface phonon-plasmon polaritons in graphene/h-BN and graphene/h-BN/graphene heterostructures on piezoelectric substrates
  • [2018] Engineering Light-Matter Interaction in Graphene by Surface Acoustic Waves
  • [2018] Graphene Silicon-Heterojunction Solar Cells
  • [2018] Graphene for advanced transparent electrodes
  • [2018] Impermeable Graphene on AlGaN/GaN HEMTs
  • [2018] Laser-reduced graphene for energy storage devices
  • [2018] Light-Matter Interaction in Graphene/h-BN and Graphene/h-BN/Graphene Heterostructures Mediated by Surface Acoustic Waves
  • [2018] Parameter space of graphene growth in cold-wall CVD reactors
  • [2018] Thermally reduced graphene oxide for hydrogen storage
  • [2017] Acoustically-driven surface phonon-plasmon polaritons in graphene/h-BN/AlN heterostructures
  • [2017] Application of graphene to transparent contacts for silicon-heterojunction solar cells
  • [2017] Automated graphene transfer system for graphene solar cells
  • [2017] Automated graphene transfer system for graphene solar cells
  • [2017] Comparative study of different methods of production of thermally reduced graphene oxide
  • [2017] Effects of HfO2 Gate dielectric and KOH-based pre-treatments on AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors
  • [2017] Effects of mist exposure on SiN-passivated AlGaN/GaN-based MISHEMTs with and without graphene top layer
  • [2017] Optical quantification of strain and doping in graphene
  • [2017] Photonic integrated devices for energy applications
  • [2016] Effects of Proton Irradiation on AlGaN/GaN based High Electron Mobility Transistors
  • [2016] Effects of high-k gate dielectrics on the electrical behavior of AlInN/GaN based diodes and HEMTs
  • [2016] Graphene reduced by laser for flexible electronics
  • [2016] Graphene solar cells fabricated with an automated graphene transfer system
  • [2016] Patterning on graphene membranes with a graphene AFM tip
  • [2015] Automatic transfer of graphene and its electrical characterization
  • [2015] CVD-graphene growth and automated transfer for large-area, high performance applications
  • [2015] Effects of HfO2 dielectric layer in AlInN/GaN heterostructures
  • [2015] Graphene foams: fabrication and applications
  • [2015] Graphene foams: fabrication and applications
  • [2015] Graphene-based supercapacitors
  • [2015] Lab-scale system for automated graphene transfer
  • [2015] Reliability assessment of AlGaN/GaN HEMTs with different in situ cap layers under gate and drain bias stress
  • [2015] Thermal stability study of AlGaN/GaN MOS-HEMTs
  • [2014] Coupling light into graphene plasmons with the help of surface acoustic waves
  • [2014] Electrical model for characterizing CVD graphene
  • [2014] Field-dependent photoluminescence of InAlN/GaN based HEMT structures
  • [2014] Flexible Graphene device for ligthing LED¿s
  • [2014] Graphene foam functionalized with electrodeposited nickel hydroxide for energy applications
  • [2014] Graphene foams: fabrication and applications
  • [2014] Method for electrical evaluation of graphene using a GFET structure
  • [2014] Polyaniline-coated carbon papers for supercapacitor electrodes
  • [2014] TEM study of the AlN grain orientation grown on NCD diamond substrate
  • [2014] Temperature performance of AlGaN/GaN MOS-HEMTs on Si substrates using Gd2O3 as gate dielectric
  • [2013] 3D graphene supercapacitor for energy applications'
  • [2013] AFM electrical characterization of graphene nano LEDs
  • [2013] Application and Modeling of GaN FET in 1MHz Large Signal Bandwidth Power Supply for Radio Frequency Power Amplifier
  • [2013] Application of GaN FET in 1MHz Large Signal Bandwidth Power Supply for Radio Frequency Power Amplifie
  • [2013] Chemical vapour deposition of graphene on 3-dimensional metal foams for energy-storage applications
  • [2013] Correlation between graphene properties and substrate grain structure in CVD fabrication
  • [2013] Coupling light into graphene plasmons through surface acoustic waves
  • [2013] Coupling light into graphene plasmons with the help of surface acoustic waves
  • [2013] Diamond substrate microstructure effect on the orientation of AlN piezoelectric layers for high frequency SAW resonators by TEM
  • [2013] Emerging Applications of Graphene
  • [2013] Energy Storage based in Graphene
  • [2013] Etching of AlGaN/GaN by Cl2-based ICP
  • [2013] Flexible graphene device for lighting LED
  • [2013] Gd2O3 gate dielectric for AlGaN/GaN HEMTs
  • [2013] Graphene-based supercapacitors for electric vehicles
  • [2013] Graphene-based supercapacitors for electric vehicles
  • [2013] Graphene: processing and emerging application
  • [2013] Impact of Intrinsic Stress in Diamond Capping Layers on the Electrical Behavior of AlGaN/GaN HEMTs
  • [2013] MnO2-based electrochemical supercapacitors on flexible carbon substrates
  • [2013] Nitride 2DEG-based devices for UV photodetection
  • [2013] Nitride 2DEG-based devices for UV photodetection
  • [2013] PAMBE grown InN layers electrical conduction by low frequency noise technique
  • [2013] Thermal stability of GaN on-Si HEMTs with different cap layers: GaN, in situ SiN, and in situ SiN/GaN
  • [2013] Thermal stability of GaN on-Si HEMTs with different in situ cap layers
  • [2013] Two dimensional electron gas related luminescence in InAl(Ga)N/AlN/GaN-based heterostructures
  • [2013] Use of PMMA to obtain Graphene layer
  • [2013] Use of PMMA to obtain Graphene layer
  • [2012] Acoustoelectronics in AlGaN/GaN: from frequency control to single-electron transport applications
  • [2012] Ambient p-doping of CVD
  • [2012] Chemical vapour deposition of graphene on 3D metal foams
  • [2012] Electrical and Surface Characterization of Wet-etched InAlN/AlN/GaN HEMTs
  • [2012] Electrical and surface characterization of wet-etched InAlN/AlN/GaN HEMTs
  • [2012] Gate oxide stability of 4H-SiC MOSFETs under on/oFF-state bias-temperature stress
  • [2012] Graphene Electrodes For Nano-LEDs
  • [2012] Graphene-like layers obtained from PMMA
  • [2012] Heat Spreading in III-Nitride HEMTs by Diamond Integration
  • [2012] High Frequency AlN/Diamond SAW devices
  • [2012] High Precision Pressure Sensors Based on SAW Devices Fabricated on Diamond Substrates
  • [2012] Investigation of Al1xInxN barrier ISFET structures with GaN capping on silicon substrates for pH detection
  • [2012] Investigation of AlInN barrier ISFET structures with GaN capping for pH detection
  • [2012] NanoLEDs with graphene electrode
  • [2012] Nanocrystalline diamond integration in III-Nitride HEMTs
  • [2012] On Surface trap and extended dislocation network in III-nitride Heterostructures
  • [2012] Photocurrent analysis of MSM InAlGaN/GaN heterostructure photodetectors
  • [2012] Photoresponse of metal-semiconductor-metal InAlGaN/GaN structures
  • [2012] Physical model for electrical measurements in graphene
  • [2012] Room temperature synthesis of AlN based piezoelectric microcantilevers
  • [2012] Simulation of thermal management in AlGaN/GaN HEMTs
  • [2012] Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures
  • [2012] Structural characterization of wet-etched quaternary InAlGaN barrier HEMT structures
  • [2012] Systematic optical characterization of two-dimensional electron gases in InAlN/GaN-based heterostructures with different In content
  • [2012] The influence of the diamond substrate surface on the SAW device performance
  • [2012] Thermionic and FIeld emission from nanocrystalline diamond and epitaxial graphene into epitaxial 4H-SiC.
  • [2012] Vertical Conduction Mechanism of Epitaxial Graphene Heterojunctions to 4H-SiC
  • [2011] 2D Channel Modulation of AlInN/GaN HEMTs Using a Selective Recess Etch
  • [2011] 2D channel modulation of AlInN/GaN HEMTs using a selective recess etch
  • [2011] Acoustic charge transport through 1D constrictions in 2DEG AlGaN/GaN heterostructures
  • [2011] Carbon graphitization on top of SiO2
  • [2011] Cryogenic behaviour of nanocrystalline diamond and epitaxial graphene Schottky contacts to 4H-SiC
  • [2011] Evidence of charge carrier number fluctuations by low frequency noise measurements in MBE grown Indium Nitride layers
  • [2011] Evidence of charge carrier number fluctuations in InN thin films?
  • [2011] Evidence of charge carrier number fluctuations in InN thin films?
  • [2011] Fabrication and characterization at high temperature of AlGaN/GaN enhancement HEMTs
  • [2011] Fabrication and characterization at high temperature of AlGaN/GaN enhancement-mode HEMTs
  • [2011] Fabrication of high frequency SAW resonators using AlN/Diamond/Si technology
  • [2011] High Temperature Pulsed and DC Performance of AlInN/GaN HEMTs
  • [2011] High frequency high-order Rayleigh modes in ZnO/GaAs
  • [2011] High temperature pulsed and DC performance of AlInN/GaN HEMTs
  • [2011] Impact of N2 plasma power and duration on AlGaN/GaN HEMT
  • [2011] Impact of N2 plasma power and duration on AlGaN/GaN HEMT
  • [2011] InN-based MIS rectification device
  • [2011] InN/GaN heterojunction electrical behavior
  • [2011] Method of Channel Temperature and Thermal Resistance Extraction in AlGaN/GaN HEMTs
  • [2011] Method of channel temperature and thermal resistance extraction in AlGaN/GaN HEMTs
  • [2011] Sputter optimization of AlN on diamond substrates for high frequency SAW resonators
  • [2011] Sputtering of AlN on micro and nanocrystalline diamond for high frequency SAW devices
  • [2011] Sputtering of AlN on micro and nanocrystalline diamond for high frequency SAW devices
  • [2011] Thermal effects in Ni/Au and Mo/Au gate metallization AlGaN/GaN HEMT¿s reliability
  • [2011] X-ray diffraction and transmission electron microscopy analysis of threading dislocations in MBE grown InN layers
  • [2010] J.G. RODRÍGUEZ, G. FUENTES, O. WILLIAMS, F. CALLE "The Influence of the Substrate Roughness on the c-Axis Orientation of AlN/Diamond Thin Films" Proc. 10th Workshop on Expert Materials Characterization and Technologies, EXMATEC 2010. Seeheim-Darmstadt (Germany) 2010
  • [2010] A. VILALTA-CLEMENTE, G. R. MUTTA, M. MORALES, J.L. DOUALAN, J. GRANDAL, M. A. SÁNCHEZ-GARCÍA, F. CALLE, E. VALCHEVA, K. KIRILOV, P. RUTERANA "Structural Study of InN layer with compressive strain" E-MRS, Symposium G: Physics and applications of novel gain materials based on III-V-N compounds Strasbourg (France), 2010
  • [2010] G. MENEGHESSO, A. STOCCO, N. RONCHI, E. ZANONI, R. CUERDO, F. CALLE, E. MUNOZ, M.J. UREN " Kink and Cathodoluminescence in AlGaN/GaN HEMTs" Proc. 34th Workshop on Compound Semiconductors and Integrated Circuits, WOCSDICE 2010. Seeheim-Darmstadt (Germany), 2010
  • [2010] G.F. IRIARTE, J.G. RODRÍGUEZ, F. CALLE."IC Compatible Synthesis of AlN for Energy Harvesting Applications". Materia Symposium 2010. Rio de Janeiro (Brasil), 2010
  • [2010] M. J. TADJER, R. CUERDO, T. J. ANDERSON, K. D. HOBART, S. MARTÍN-HORCAJO, F. CALLE "Comparative study of threshold voltage stability in enhancement mode AlGaN/GaN HEMTs". Int. Workwhop on Nitrides Tampa (EEUU), 2010
  • [2010] R. CUERDO, J. GRAJAL, F. CALLE "Power Performance of AlGaN/GaN HEMTs as a Function of Temperature". Proc. 34th Workshop on Compound Semiconductors and Integrated Circuits, WOCSDICE 2010 Seeheim-Darmstadt (Germany), 2010
  • [2010] S. MARTÍN-HORCAJO, M. J. TADJER, R. CUERDO, M. F. ROMERO, F. CALLE "Evaluation of the thermal stability in D-mode and E-mode HEMTs based on AlGaN/GaN" 19th European Workshop on Hetectostructure HETECH 2010 Creta (Greece), 2010
  • [2010] S. MARTÍN-HORCAJO, R. CUERDO, E. SILLERO, F. CALLE. "Self-heating effects in algan/gan hemts at high temperature". Proc. 34th Workshop on Compound Semiconductors and Integrated Circuits, WOCSDICE 2010 Seeheim-Darmstadt (Germany), 2010
  • [2010] T. BRAZZINI, J. GRANDAL, A. PRADO, A. VILLATA-CLEMENTE, F. CALLE. "InN-based material devices for infrared photodetection". Proc. 19th European Workshop on Heterostructures Technology Crete (Greece) 2010
  • [2009] F. KNÖBBER, E. SILLERO, C.-C. RÖHLIG, O.A. WILLIAMS, R.E. SAH, L. KIRSTE, V. CIMALLA, C.E.NEBEL, F. CALLE, V. LEBEDEV "Piezoelectrically actuated AlN and Nanodiamond microstructures" 18th European Workshop on Heterostructures Technology Ulm (Germany), 2009
  • [2009] G.F.IRIARTE, E. SILLERO, J.G. RODRÍGUEZ, A.NAVARRO, J. PEDRÓS, F.CALLE "E-beam lithography of nano IDT on insulating, semiconducting and conductive substrates" 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE Málaga (Spain), 2009
  • [2009] J. EROLES, A. BENGOECHEA, M.A. SANCHEZ-GARCIA, F. CALLE "Characterization of a pH sensor based on an AlGaN/GaN transistor" 7th Spanish Conference on Electronic Devices. CDE-09. IEEE, Electron Devices, 258-261, ISBN: 978-1-4244-2838-0 Santiado de Compostela (Spain), 2009
  • [2009] J. PEDRÓS, F. CALLE, J. GRAJAL, Z. BOUGRIOUA "Voltage tunable SAW phase shifter on AlGaN/GaN" 2009 IEEE International Ultrasonics Symposium Roma (Italy), 2009.
  • [2009] J.G. RODRÍGUEZ, G.F. IRIARTE, F. CALLE "Optimization of c-axis oriented reactive sputter deposited AlN films" 18th European Workshop on Heterostructures Technology Ulm (Alemania), 2009
  • [2009] J.M. ROUTOURE, B. GUILLET, L. MÉCHIN, A. VILALTA-CLEMENTE, J. GRANDAL, M. A. SÁNCHEZ-GARCÍA, S. MARTÍN, F. CALLE, P. RUTERANA "Low frequency noise measurements in InN films" 2009 E-MRS Fall Meeting, Symposium on Indium Nitride. Warsaw (Poland), 2009
  • [2009] M. F. ROMERO, M. J. UREN, A. JIMÉNEZ, R. CUERDO, C. DUA, F. CALLE, E. MUÑOZ "Thermal storage effects in Ni/Au-gate" 7th Spanish Conference on Electronic Devices CDE-09.IEEE Electron Device Letters, 258-261,ISBN: 978-1-4244-2838-0 Santiago de Compostela (Spain), 2009
  • [2009] R. CUERDO, F. CALLE "Source and drain resistances behaviour as a function of temperature and drain current in AlGaN/GaN HEMTs" 8th International Conference of Nitride Semiconductors (ICNS-8) Jeju (Korea), 2009
  • [2009] R. CUERDO, M. UREN, M.-A. DI FORTE POISSON, E. MUÑOZ, F. CALLE "DC and microwave behaviour of AlGaN/GaN HEMTs on SiC at high temperature" 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE09) Málaga (Spain), 2009
  • [2008] DC and RF Performance of AlGaN/GaN HEMTs on SiC at High Temperatures Int. Workshop on Nitrides Montreaux (Suiza), 2008.
  • [2008] Nanoporous GaN by UV assisted electroless etching for sensor applications Int. Workshop on Nitrides Montreaux (Suiza), 2008.
  • [2008] RF MEMS Switches with III-N Technology 32nd Workshop on Compound Semiconductors and Integrated Circuits, WOCSDICE 2008. Lovaina (Bélgica), 2008.
  • [2007] A. NAVARRO, C. RIVERA, R. CUERDO, J.L. PAU, J. PEREIRO, F. CALLE, E. MUÑOZ "Noise study in photodiodes based on InGaN/GaN MQW". 2007 Spanish Conference on Electron Devices IEEE Proceedings 321-324, ISBN: 1-4244-0868-7 (2007) ISSN: 0741-3106 31 de enero al 2 de febrero 2007 El Escorial, Madrid (España)
  • [2007] A. Navarro, C. Rivera, R. Cuerdo, J.L. Pau, J. Pereiro, F. Calle, E. Muñoz "Noise study in photodiodes based on InGaN/GaN" MQW 6th Spanish Conference on Electronic Devices, CDE-07 El Escorial (Madrid, España) 31 de enero al 2 de febrero de 2007
  • [2007] E. Sillero, A. Bengoechea, M. A. Sánchez-García, F. Calle "III-Nitride MEMS grown by MBE on Si(111): Fabrication and mechanical characterisation" 16th European Workshop on Heterostructures Technology Frejus (Francia) 2 al 5 de septiembre de 2007
  • [2007] E. Sillero, D. López-Romero, A. Bengoechea, M. A. Sánchez-García, F. Calle "Fabrication and stress relief modelling of GaN based MEMS test structures grown by MBE on Si(111)" 7th International Conference on Nitride Semiconductors (ICNS07) Las Vegas (USA) 16 al 21 de septiembre de 2007
  • [2007] F. Calle "Nanotecnología para la información y las comunicaciones" Jornadas AUTOMEC, Universidad Miguel Hernández. Elche, Alicante. Marzo 2007.
  • [2007] R. Cuerdo, F. Calle, A. F. Braña, E. Muñoz, Y. Cordier, M. Azize, N. Baron, S. Chenot "High temperature DC performance of nitride HEMTs with different gate length" 16th European Workshop on Heterostructures Technology Frejus (Francia) 2 al 5 de septiembre de 2007
  • [2007] R. Cuerdo, F. Calle, A. F. Braña, Y. Cordier, M. Azize, N. Baron, S. Chenot, E. Muñoz "High temperature behaviour of AlGaN/GaN HEMTs on Si(111) and sapphire substrates" 7th International Conference on Nitride Semiconductors (ICNS07) Las Vegas (USA) 16 al 21 de septiembre de 2007
  • [2007] Y. Pei, R. Cuerdo, F. Recht, N. Fichtenbaum, S. Keller, S.P. Denbaars, F. Calle, U.K. Mishra "Low temperature high-frequency performance of deep submicron AlGaN/GaN HEMTs" The 34th International Symposium on Compound Semiconductors (ISCS07) Kyoto (Japón) 15 al 18 de octubre de 2007
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• Premios
  • [2017] Effects of mist exposure on SiN-passivated AlGaN/GaN-based MISHEMTs with and without Graphene top layer '', Best paper award in the 41st WOCSDICE -Workshop on Compound Semiconductor and Integrated Circuits held in Europe celebrated in Las Palmas de Gran Canaria, Canary Islands, Spain, 22-24 May 2017 .
• Proyectos de I+D+i
  • [2019] EIT Digital Doctoral School-2019-Mobility: I&E Education/Students - Madrid 2019
  • [2019] EIT Digital Industrial Doctorate - Madrid 2019: EIT Digital Industrial Doctorate - 2019
  • [2019] NMAT2D-CM: NUEVOS MATERIALES BIDIMENSIONALES: CARACTERIZACION, PROPIEDADES Y APLICACIONES (G4-UPM)
  • [2018] DIGRAFEN: Dispositivos de grafeno para la mejora de las energías renovables
  • [2018] DIGRAFEN: Dispositivos de grafeno para la mejora de las energías renovables
  • [2018] DIGRAFEN: Dispositivos de grafeno para la mejora de las energías renovables
  • [2018] EIT DIGITAL DOCTORAL SCHOOL
  • [2018] EIT Digital Doctoral School-2018: I&E Education/Organisations of courses - Madrid
  • [2018] EIT Digital Industrial Doctorate - Madrid: EIT Digital Industrial Doctorate 2018
  • [2018] EIT Digital Mobility of doctoral students-2018: EIT Label I&E Education/Students - Madrid
  • [2018] GRAPHENE NANOCOMPOSITES REACTORS AT PREINDUSTRIAL TECHNOLOGY READINESS (NANOGREAT)
  • [2018] GRAPHENE NANOCOMPOSITES REACTORS AT PREINDUSTRIAL TECHNOLOGY READINESS (NANOGREAT-2017 )
  • [2017] EIT Digital Doctoral School-2017: EIT Digital Doctoral Course Organization 2017
  • [2017] EIT Digital Mobility of doctoral students-2017: EIT Digital Mobility of doctoral students - I&E Dcucation/Activity of students - UPM
  • [2017] GRAPHENE NANOCOMPOSITES REACTORS AT PREINDUSTRIAL TECHNOLOGY READINESS (NANOGREAT)
  • [2017] NANOGREAT-2017: Graphene NANOcomposites REActors at preindustrial Technology readiness
  • [2016] NANOGREAT-2016: Graphene NANOcomposites REActors at preindustrial Technology readiness
  • [2015] : Dispositivos avanzados de Gap Ancho para el uso Racional de la Energía (RUE)
  • [2015] GRAFAGEN: Grafeno para dispositivos de generación y almacenamiento de energía
  • [2015] SISTEMAS DE ALMACENAMIENTO DE ENERGÍA CON GRAFENOS PARA VEHÍCULOS ELÉCTRICOS
  • [2014] GRAFENO PARA DISPOSITIVOS DE GENERACIÓN Y ALMACENAMIENTO DE ENERGÍA
  • [2014] RESONADORES DE ALTA FRECUENCIA EN ESTRUCTURAS ALN/DIAMANTE
  • [2014] SISTEMAS DE ALMACENAMIENTO DE ENERGÍA CON GRAFENOS PARA VEHÍCULOS ELÉCTRICOS
  • [2014] SUBP ISOM: EQUIPO DE INVESTIGACION - DISPOSITIVOS AVANZADOS DE GAP ANCHO PARA EL USO RACIONAL DE LA ENERGIA (RUE): CSIC+UV+UPC+URV+ROBOTIKER+UZ+UO+UPM
  • [2013] Consolider RUE (CSD2009-00046) AEGAN (TEC2009-14307-C02-01) CAVE (TEC2012-38247)
  • [2013] Contrato empresa HEMTs. BOSCH-ALEMANIA
  • [2013] Contrato empresa HEMTs. BOSCH-ALEMANIA
  • [2013] Convertidores de alta velocidad de conmutación multinivel y multifase para aplicaciones espaciales
  • [2013] Convertidores de alta velocidad de conmutación multinivel y multifase para aplicaciones espaciales
  • [2013] High frequency Resonators on AlN/Diamond structures, ReADi
  • [2013] High frequency Resonators on AlN/Diamond structures, ReADi
  • [2013] SISTEMAS DE ALMACENAMIENTO DE ENERGÍA CON GRAFENOS PARA VEHÍCULOS ELÉCTRICOS
  • [2013] SUBP ISOM: EQUIPO DE INVESTIGACION - DISPOSITIVOS AVANZADOS DE GAP ANCHO PARA EL USO RACIONAL DE LA ENERGIA (RUE): CSIC+UV+UPC+URV+ROBOTIKER+UZ+UO+UPM
  • [2012] Advanced Wide Band Gap Semiconductor Devices for Rational Use of Energy, RUE, Consolider
  • [2012] Amplificadores de envolvente de banda ancha para etapas EER/ET/ y fabricación de dispositivos de nitruro de Galio (GAN), AEGAN
  • [2012] Amplificadores de envolvente de banda ancha para etapas EER/ET/ y fabricación de dispositivos de nitruro de Galio (GAN), AEGAN
  • [2012] Contrato empresa HEMTs
  • [2012] Contrato empresa HEMTs
  • [2012] High frequency Resonators on AlN/Diamond structures, ReADi
  • [2012] High frequency Resonators on AlN/Diamond structures, ReADi
  • [2012] High frequency nanoresonators by MEMS technologies
  • [2012] High frequency nanoresonators by MEMS technologies
  • [2012] Proyecto de colaboración dentro del Campus de Excelencia Internacional (CEI): Apoyo al contrato postdoctoral del Dr. Jurgen Schiefele. Temática: Controlling graphene devices with surface accoustic waves
  • [2012] Proyecto de colaboración dentro del Campus de Excelencia Internacional (CEI): Apoyo al contrato postdoctoral del Dr. Jurgen Schiefele. Temática: Controlling graphene devices with surface accoustic waves
  • [2012] RESONADORES DE ALTA FRECUENCIA EN ESTRUCTURAS ALN/DIAMANTE
  • [2012] SISTEMAS DE ALMACENAMIENTO DE ENERGÍA CON GRAFENOS PARA VEHÍCULOS ELÉCTRICOS
  • [2012] SISTEMAS DE ALMACENAMIENTO DE ENERGÍA CON GRAFENOS PARA VEHÍCULOS ELÉCTRICOS
  • [2012] SUBP ISOM: EQUIPO DE INVESTIGACION - DISPOSITIVOS AVANZADOS DE GAP ANCHO PARA EL USO RACIONAL DE LA ENERGIA (RUE): CSIC+UV+UPC+URV+ROBOTIKER+UZ+UO+UPM
  • [2012] Sistema de Almacenamiento de Energía basado en Grafeno para Vehículos Eléctricos, SAVE. (FASE I)
  • [2011] 'Apoyo del ISOM a la solicitud de beca-contrato predoctoral del Investigador David González. Temática: Modelado de ondas acústicas en grafeno''. Entidad: Dpto. Física de Materiales, Facultad de Ciencias Físicas. UCM. Código: Beca-contrato predoctoral CEI (2011). IP: Prof. Fernando Sols/Fernando Calle .
  • [2011] 'Contrato postdoctoral del Dr. Marko Tadjer. Temática: Tecnología de transistores basados en nitruros del grupo III''. Entidad: Profs. Germán González y Álvaro de Prado, Dpto. Física Aplicada III, Facultad de Ciencias Físicas, Universidad Complutense de Madrid. Código: contrato postdoctoral (Abril de 2011). IP: Fernando Calle.
  • [2011] Contrato empresa HEMTs
  • [2011] DESMOSTRADOR DE UN CONMUTADOR MICROELECTROMECÁNICO OPERAND EN ALTAS FRECUENCIAS.
  • [2011] HIGH FREQUENCY NANORESONATORS BY MEMS TECHNOLOGIES
  • [2011] I+D DE MICRO Y NANOSISTEMAS BASADOS EN NITRUROS III PARA COMUNICACIONES Y SENSORES
  • [2011] RAINBOW: High quality and intrinsic Properties of InN and indium rich Nitride Alloys
  • [2011] RESONADORES DE ALTA FRECUENCIA EN ESTRUCTURAS ALN/DIAMANTE
  • [2011] SUBP ISOM: EQUIPO DE INVESTIGACION - DISPOSITIVOS AVANZADOS DE GAP ANCHO PARA EL USO RACIONAL DE LA ENERGIA (RUE): CSIC+UV+UPC+URV+ROBOTIKER+UZ+UO+UPM
  • [2010] 33RD WORKSHOP ON COMPOUND SEMICONDUCTOR DEVICES AND INTEGRATED CIRCUITS
  • [2010] DEPÓSITO Y CARACTERIZACIÓN DE CAPA ANTIDIFUSORA SOBRE ACERO CENIT CETICA.
  • [2010] ESTUDIO DE LOS MECANISMOS DE DEGRADACIÓN EN AMPLIFICADORES CON PHEMTS DE GAAS/A/GAAS MONOLÍTICOS.
  • [2010] HIGH FREQUENCY NANORESONATORS BY MEMS TECHNOLOGIES
  • [2010] HIGH FREQUENCY RESONATORS ON ALN/DIAMOND STRUCTURES, READI. TEC2010-19511 (2010-2013).
  • [2010] HIGH QUALITY MATERIAL AN INTRINSIC PROPERTIES OF INN AND INDIUM RICH NITRIDE ALLOYS (THE RAINBOW ITN) 213238
  • [2010] I+D DE MICRO Y NANOSISTEMAS BASADOS EN NITRUROS III PARA COMUNICACIONES Y SENSORES
  • [2010] RESONADORES DE ALTA FRECUENCIA EN ESTRUCTURAS ALN/DIAMANTE
  • [2010] subp ISOM: EQUIPO DE INVESTIGACION - DISPOSITIVOS AVANZADOS DE GAP ANCHO PARA EL USO RACIONAL DE LA ENERGIA (RUE): CSIC+UV+UPC+URV+ROBOTIKER+UZ+UO+UPM
  • [2009] 33RD WORKSHOP ON COMPOUND SEMICONDUCTOR DEVICES AND INTEGRATED CIRCUITS
  • [2009] AYUDAS PARA GASTOS ASOCIADOS AL DESARROLLO DE PROGRAMAS CON MENCION DE CALIDAD CURSO 2005-2006
  • [2009] CONGRESO WOCSDICE 2009
  • [2009] DEMOSTRADOR DE UN CONMUTADOR MICROELECTROMECANICO OPERANDO EN ALATAS FRECUENCIAS
  • [2009] DEMOSTRADOS DE UN CONMUTADOR MICROELECTROMECANICO OPERANDO EN ALTAS FRECUENCIAS
  • [2009] DEPÓSITO Y CARACTERIZACIÓN DE CAPA ANTIDIFUSORA SOBRE ACERO CENIT CETICA.
  • [2009] DESARROLLO DE PROCEDIMIENTOS DE MEDIDA DE TRANSITORES GAN
  • [2009] DESMOSTRADOR DE UN CONMUTADOR MICROELECTROMECÁNICO OPERAND EN ALTAS FRECUENCIAS.
  • [2009] ESTUDIO DE LOS MECANISMOS DE DEGRADACIÓN EN AMPLIFICADORES CON PHEMTS DE GAAS/A/GAAS MONOLÍTICOS.
  • [2009] FONDOS FEDER A DISPOSICION DE INVESTIGADORES
  • [2009] I+D DE MICRO Y NANOSISTEMAS BASADOS EN NITRUROS III PARA COMUNICACIONES Y SENSORES
  • [2008] 33rd Wokshop on compound semiconducotr devices and integrated circuits
  • [2008] Ayudas financieras para la mejora de las infraestructuras científicas y tecnológicas singulares y para el acceso a las mismas
  • [2008] Ayudas para apoyar las líneas de I+D en el programa de creación y consolidación de grupos de investigación de la UPM. (Resolución de 19 de junio de 2007)
  • [2008] Demostrador de un conmutador Microelectromecánico operando en altas frecuencia
  • [2008] Demostrador de un conmutador Microelectromecánico operando en altas frecuencia
  • [2008] Depósito y caracterización de capa antidifusa sobre acero (CENIT-CETICA)
  • [2008] Desarrollo de procedimientos de medida de transistores de GaN
  • [2008] High quality Material and intrinsic Properties of InN and indium rich Nitride Alloys-(The Rainbow ITN)
  • [2008] I+D de Micro y Nanosistemas basados en Nitruros III-V para comunicaciones y sensores MINANI
  • [2007] "(Bio)sensores químicos avanzados para medida in-situ de la calidad de aguas basados en elementos específicos de reconocimiento y lectura "multifuncional integrada"
  • [2007] "(Bio)sensores químicos avanzados para medida in-situ de la calidad de aguas basados en elementos específicos de reconocimiento y lectura (multifuncional integrada)"
  • [2007] "Ayudas para apoyar las líneas de I+D en el programa de creación y consolidación de grupos de investigación de la Universidad Politécnica de Madrid. CAM, Referencia: CCG07-UPM/000-3220"
  • [2007] "Demostrador de un conmutador Microelectromecánico operando en altas frecuencia"
  • [2007] "Demostrador de un conmutador Microelectromecánico operando en altas frecuencias" Ministerio de Industria,Turismo y Comercio, FIT-330100-2007-66 (2007-2008)
  • [2007] "I+D de Micro y Nanosistemas basados en Nitruros III-V para comunicaciones y sensores (MINANI)" Min. Educación y Ciencia, TEC-2007-67065/MIC (2007-2010)
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• Responsabilidades
  • [2019] Prof. Fernando Calle, Adjunto a la Vicerrectora de Investigación, Innovación y Doctorado
  • [2019] Prof. Fernando Calle, Responsable del Grupo de Dispositivos Semiconductores del ISOM (2013-)
  • [2018] Dr. Fernando Calle, IP-ISOM, proyecto: Biomateriales basados en grafeno-macrófagos: caracterización funcional para su aplicación en patología cardiovascular'' Entidad: Fundación Ramón Areces. Código: XVIII Concurso Nacional de Ayudas a la Investigación en Ciencias de la Vida y de la Materia (2017-2019). IP: Prof. Lisardo Boscá, Instituto de Investigaciones Biomédicas Alberto Boscá, centro mixto UAM-CSIC, IP/ISOM: Prof. Fernando Calle (en colaboración). Presupuesto: 130.000 euros
  • [2018] Dr. Fernando Calle.- EIT Digital Label I&E Education Madrid 2018 European Institute of Technology Digital, Código OTT EH180020205
  • [2018] Dr. Fernando Calle.- Director del GDS ISOM
  • [2018] Dr. Fernando Calle.- EIT Digital Industrial Doctorate 2018 European Institute of Technology Digital Código OTT EH180020204
  • [2018] Dr. Fernando Calle.- Member of Scientific Commitee.- Applied Nanotechnology and Nanoscience International Conference 2018, ANNIC.- Berlín, Alemania. 22/10/2018 - 24/10/2018
  • [2018] Dr. Fernando Calle.- Member of Scientific Commitee.- Workshop on Sound-enabled Nanotechnologies (IWSENT 2018). 26/11/2018 - 29/11/2018
  • [2018] Dr. Fernando Calle.- Member of Steering Commitee.- 42th Workshop on Compound Semiconductors and Integrated Circuits, WOCSDICE. Bucarest .22/05/2018 - 24/05/2018
  • [2018] Dr. Fernando Calle.- Miembro del Comité Técnico Organizador.- 12ª Conferencia de Dispositivos Electrónicos.- Salamanca. 14/11/2018 - 16/11/2018
  • [2018] Dr. Fernando Calle.- Vicerrector Adjunto de Doctorado y Apoyo a la Investigación de la UPM
  • [2018] Participantes ISOM: IP-ISOM: Dr. Jorge Pedrós, IP-ISOM: Dr. Fernando Calle, Dr. Boscá y D. Rajveer Singh Fandan.- proyecto 'Dynamic electromechanical control of semiconductor nanostructures by acoustic fields', SAWTrain H2020 Marie Curie Initial Training Network, 642688-H2020-MSCA-ITN2014 (2015-2019).
  • [2018] Participantes del ISOM: IP-ISOM: Dr. F. Calle, Dr. J. Martínez, Dr. J. Pedrós, Dr. A. Boscá, D. Antonio Ladrón de Guevara, proyecto: 'Graphene NANOcomposites REActors at preindustrial Technology readiness, nanoGREAT' KIC Added Value Activities (KAVA) Network of Infrastructure, EIT Raw Materials. 2016-2018 , I.P. ? M. Zen (coordinador).
  • [2017] Adjunto a Vicerrectora para Doctorado e Investigación (desde 28-4-2016) Universidad Politécnica de Madrid
  • [2017] Publicación de patente 14382428.2 - 135, 17 de agosto 2017, título: Hierarchical composite structures based on graphene foam or graphene-like foam
  • [2017] Responsable del Grupo de Investigación de Dispositivos Semiconductores del ISOM (desde 01-14)
  • [2016] Director del GDS del ISOM
  • [2014] Miembro del Comité de Progarma de 38th Workshop on Compound Semiconductors and Integrated Circuits, WOCSDICE¿14 Tipo de actividad: Member of the Steering Committee Ámbito: Internacional Lugar y fecha: Delphi (Grecia), 15-20 junio 2014.
  • [2014] Miembro del Comité de Programa de 25th European Symposium on Reliability of Electron Devices (ESREF 2014), Symp G 'Wide Bandgap Reliability' Tipo de actividad: Member of the Technical Program Committee Ámbito: Internacional Lugar y fecha:
  • [2014] Miembro del Comité de Programa de 2º Congreso Nacional I+D en Defensa y Seguridad DESEi+d 2014 Tipo de actividad: Miembro del Comité Científico y Técnico Ámbito: Nacional Lugar y fecha: Zaragoza, 6-7 noviembre 2014
  • [2014] Miembro del Comité de Programa de : 23th European Heterostructure Technology Workshop, HETECH 2014 Tipo de actividad: Member of the Steering Committee Ámbito: Internacional Lugar y fecha:
  • [2014] Presidente de sesion NanoSpain 2014 Tipo de actividad: Presidente: Sesión Graphene Ámbito: Internacional Lugar y fecha: Madrid, 11-14 marzo 2014
  • [2014] Presidente de sesion de 38th Workshop on Compound Semiconductors and Integrated Circuits (WOCSDICE) Tipo de actividad: Presidente Sesión: Devices and device processing Ámbito: Internacional Lugar y fecha: Delphi (Greece), 17 junio 2014
  • [2013] Organización de Curso de Verano de la UPM.- Emerging Applications of Graphene
  • [2013] Responsable GDS del ISOM.- A partir del 13/12/2013
  • [2010] DR. FERNANDO CALLE GÓMEZ.- SUBDIRECTOR DEL ISOM
  • [2009] Dr. FERNANDO CALLE GÓMEZ Subdirector del Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM). Universidad Politécnica de Madrid
  • [2008] MIEMBRO DE LA COMISION ASESORA DEL MASTER IN SPACE TECHNOLOGY. COORDINADOR DE LA ASIGNATURA ELECTRONICS IN SPACE.
  • [2008] Profesor Fernando Calle Gómez.- Miembro del Comité Interescuelas del Master in Space Technology (UPM, 2008)
  • [2007] Fernando Calle Gómez,Título: 16th European Heterostructure Technology Workshop, HETECH¿07 Tipo de actividad: Miembro del Steering Committee Ámbito: Internacional Lugar y fecha: Niza (Francia), 2-4 septiembre 2007.
  • [2007] Fernando Calle Gómez,Título: 3ª Jornadas de Investigación y Desarrollo Tecnológico, en Semana de la ETSIT-UPM. Tipo de actividad: Presidente del Comité Organizador Ámbito: Nacional Lugar y fecha: Madrid, abril 2007.
  • [2007] Fernando Calle Gómez,Título: Jornada de la Cátedra Orange Ámbito: Nacional Tipo de actividad: Moderador de Mesa Redonda: Servicios Multimedia Audiovisuales Lugar y fecha: Madrid, febrero 2007.
  • [2007] Fernando Calle Gómez,Título: Premios de Tesis Doctoral y Proyectos FC del Colegio Oficial de Ingenieros de Telecomunicación Tipo de actividad: Miembro del Comité de Selección y Evaluador Ámbito: Nacional Lugar y fecha: Madrid, mayo 2007.
  • [2007] Fernando Calle Gómez,Título: Telecom I+D 2007 Tipo de actividad: Miembro del Comité del Programa Ámbito: Nacional Lugar y fecha: Valencia, 29-31 octubre 2007.
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• Tesis Doctorales
  • [2017] Development and characterization of graphene-based electronic devices
  • [2017] Improvement of performance and reliability of GaN-based high electron mobility transistors (HEMTs) using high-k dielectrics
  • [2016] Design, Technology and Characterization of Micromechanised Sensors and Actuators for Harsh Environments
  • [2015] Technology and characterisation of GaN-based HEMT devices: high temperature and trapping effects
  • [2014] Thermal, stress, and traps effects in AlGaN/GaN HEMTs
  • [2013] Crecimiento y caracterización de estructuras para micro y nanosistemas de nitruros-III para comunicaciones y sensores
  • [2013] Properties and applications of high electron density structures based on InN and related compounds.- Doctorado Internacional-PhD Degree with International Honourable Mention)
  • [2007] "Dispositivos SAW en estructuras de nitruros del grupo III: propagación y modulación óptica y electrónica" Nombre del Departamento: Ingeniería Electrónica de la ETSIT-UPM Doctorando: D. Jorge Pedrós Ayala Director/es de la Tesis: D. Fernando Calle Gómez Nota: Sobresaliente cum laude por unanimidad Lugar, Fecha y Hora de la Defensa: ETSIT-UPM, 6 de julio de 1007
  • [2007] Microfluidic-nanophotonic label-free biosensors for Lab-on-a-chip applications
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