Portal de Transparencia

Actividad investigadora:

• Artículos en revistas
  • [2018] Effect of different buffer layers on the quality of InGaN layers grown on Si
  • [2017] Selective Area Growth of InGaN/GaN Nanocolumnar Heterostructures by Plasma-Assisted Molecular Beam Epitaxy
  • [2017] Selective area growth of AIN/GaN nanocolumns on (0001) and (11-22) GaN/sapphire for semi-polar and non-polar AIN pseudo-templates
  • [2016] Distinguishing cubic and hexagonal phases within InGaN/GaN microstructures using electron energy loss spectroscopy
  • [2016] Oxygen-related photoluminescence quenching in selectively grown GaN nanocolumns: Dependence on diameter
  • [2015] Distinguishing Cubic and Hexagonal phases within InGaN/GaN micro-structures using Electron Energy Loss Spectroscopy
  • [2014] "Selective Area Growth of III-Nitrides on polar and semi-polar orientations: from light emitters to pseudo-substrates"
  • [2014] Advances on MBE Selective Area Growth of III-Nitride nanostructures: from nanoLEDs to pseudo substrates
  • [2014] Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range
  • [2013] Investigation of AlInN barrier ISFET structures with GaN capping for pH detection
  • [2013] Investigation of AlInN barrier ISFET structures with GaN capping for pH detection
  • [2013] Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns
  • [2013] Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns (vol 102, 181103, 2013)
  • [2013] Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11-22) GaN templates
  • [2013] Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11-22) GaN templates
  • [2013] Selective area growth and characterization of InGaN nanocolumns for phosphor-free white light emission
  • [2013] Selective area growth and characterization of InGaN nanocolumns for phosphor-free white light emission
  • [2013] Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission
  • [2013] Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission
  • [2012] E-beam nano-patterning for the ordered growth of GaN/InGaN nanorods
  • [2012] Fabrication of GaN nanorods by focused ion beam
  • [2012] Investigation of AlInN barrier ISFET structures with GaN capping for pH detection
  • [2012] Ordered gan/ingan nanorods arrays grown by molecular beam epitaxy for phosphor-free white light emission
  • [2012] Oxygen photo-adsorption related quenching of photoluminescence in group-III nitride nanocolumns
  • [2012] Plasmon excitation in electron energy-loss spectroscopy for determination of indium concentration in (In,Ga)N/GaN nanowires
  • [2012] Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies
  • [2012] Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography
  • [2012] Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography
  • [2011] Critical aspects of substrate nanopatterning for the ordered growth of GaN nanocolumns
  • [2011] Decoupling single nanowire mobilities limited by surface scattering and bulk impurity scattering
  • [2011] Polarity determination by electron energy-loss spectroscopy: application to ultra-small III-nitride semiconductor nanocolumns
  • [2011] Radiative defects in GaN nanocolumns: Correlation with growth conditions and sample morphology
  • [2010] A.VILALTA-CLEMENTE, G. R.MUTTA, M. P. CHAUVAT, M. MORALES, J. L. DOUALAN, P. RUTERANA, J. GRANDAL, M. A. S ÁNCHEZ-GARCIA, F. CALLE, E. VALCHEVA, K. KIRILOV, ''Investigation of InN layers grown by molecular beam epitaxy on GaN templates'' Physica Status Solidi (a), 207, 1079-1082 (2010)
  • [2010] E. CALLEJA, M.A. SÁNCHEZ-GARCIA, P. LEFEBVRE, J.RISTIC, F. BARBAGINI, A. BENGOECHEA, Z. GACEVIC. "Los LEDs también iluminarán las ciudades" Revista UPM, 16, 11-15 (2010)
  • [2010] E. SAKALAUSKAS, P. SCHLEY, J. RATHEL, T.A. KLAR, R. MULLER, J. PEZOLDT, K. TONISCH, J. GRANDAL, M.A. SANCHEZ-GARCIA, E. CALLEJA, A. VILALTA-CLEMENTE, P. RUTERANA, R. GOLDHAHN, "Optical properties of InN grown on Si(111) substrate". Physica Status Solidi (a) 207, 5, 1066 (2010)
  • [2010] GaN and InN nanocolumns as electrochemical sensing elements: Potentiometric response to KCl, pH and urea
  • [2010] Investigation of InN layers grown by molecular beam epitaxy on GaN templates
  • [2010] N. SOFIKITI, N. CHANIOTAKIS, J. GRANDAL, M. UTRERA, M.A. SÁNCHEZ-GARCÍA, E. CALLEJA, "GaN and InN nanocolumns as electrochemical sensing elements: Potentiometric response to KCl, pH and urea" Materials Letters 64, 1332 (2010)
  • [2010] Optical properties of InN grown on Si(111) substrate
  • [2009] A . BENGOECHEA ENCABO, J. HOWGATE, M. STUTZMANN, M. EICKHOFF, M.A. SÁNCHEZ-GARCÍA Ultrathin GaN/AlN/GaN solution-gate field effect transistor with enhanced resolution at low source-gate voltage Sensors and Actuators B, 142, 304 (2009)
  • [2009] A. BENGOECHEA ENCABO, J. HOWGATEB, M. STUZMANNB, M. EICKHOFF, M.A SANCHEZ-GARCIA "Ultrathin GaN/AlN/GaN solution-gate field effect transistor with enhanced resolution at low source-gate voltage" Sensors and Actuators B 142 (2009) 304-307
  • [2009] F.B.NARANJO, M.GONZÁLEZ-HERRÁEZ, S.VALDUEZA-FELIP, H.FERNÁNDEZ, J.SOLIS, S. FERNÁNDEZ, E.MONROY, J.GRANDAL, M.A.SÁNCHEZ-GARCÍA "Non-linear properties of nitride-based nanostructures for optically controlling the speed of light at 1.5 mm" Microelectronics Journal 40, 349-352 (2009)
  • [2009] J. GRANDAL, M.A. SÁNCHEZ-GARCÍA, E. CALLEJA, E. GALLARDO, J.M. CALLEJA, E. LUNA, A. TRAMPERT, U. JAHN, "InN nanocolumns grown by plasma-assisted molecular beam epitaxy on A-plane GaN templates" Applied Physics Letters, 94, 221908 (2009)
  • [2009] N. SOFIKITI, N. CHANIOTAKIS, J. GRANDAL, M. UTRERA, M.A. SANCHEZ-GARCIA, E. CALLEJA, E. ILIOPOULOS, A. GEORGAKILAS, "Direct immobilization of enzymes in GaN and InN nanocolumns: The urease case study2 Applied Physics Letters 95, 113701 (2009)
  • [2009] S. FERNÁNDEZ-GARRIDO, J. GRANDAL, E. CALLEJA, M.A. SÁNCHEZ-GARCÍA, D. L. ROMERO "A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)" Journal of Applied Physics, 106, 126102-1, 126102-3 (2009)
  • [2008] Band bending at In-rich InGaN surfaces
  • [2008] Fabrication and stress relief modelling of GaN based MEMS test structures grown by MBE on Si(111)
  • [2008] Implementing FFT-Based Digital Channelized Receivers on FPGA Platforms
  • [2008] Raman scattering by coupled plasmon-LO phonons in InN nanocolumns
  • [2008] Raman scattering by longitudinal optical phonons in InN nanocolumns grown on Si(111) and Si(001) substrates
  • [2008] Space charged region in GaN and InN nanocolumns investigated by Atomic Force Microscopy
  • [2007] E. CALLEJA, J. GRANDAL, M.A. SÁNCHEZ-GARCÍA, M. NIEBELSCHÜTZ, V. CIMALLA, O. AMBACHER "Evidence of electron accumulation at non-polar surfaces of InN nanocolumns" Applied Physics Letters, 90, 262110-262112 (2007) ISSN: 0003-6951
  • [2007] E. CALLEJA, J. RISTIĆ, S. FERNÁNDEZ-GARRIDO, L. CERUTTI, M. A. SÁNCHEZ-GARCÍA, J. GRANDAL, A. TRAMPERT, U. JAHN, G. SANCHEZ, A. GRIOL, B. SANCHEZ "Growth, morphology and structural properties of group-III-nitride nanocolumns and nanodisks" Physica Status Solidi (b), 244, 2816-2837 (2007) ISSN: 0370-1972
  • [2007] E. CALLEJA, J. RISTIC, S. FERNÁNDEZ-GARRIDO, L. CERUTTI, M. A. SÁNCHEZ-GARCÍA, J. GRANDAL, A. TRAMPERT, U. JAHN, G. SANCHEZ, A. GRIOL, B. SANCHEZ "Growth, morphology and structural properties of group-III-nitride nanocolumns and nanodisks" Physica Status Solidi (b), 244, 2816-2837 (2007) ISSN: 1521-3951
  • [2007] J. GRANDAL, M.A. SANCHEZ-GARCIA , E. CALLEJA , E. LUNA , A. TRAMPERT "Accommodation mechanism of InN nanocolumns grown on Si (111) substrates by molecular beam epitaxy" Applied Physics Letters, 91, 021902-021904 (2007) ISSN: 0003-6951
  • [2007] J.M. CALLEJA, S. LAZIĆ, J. SANCHEZ-PÁRAMO, F. AGULLÓ-RUEDA, L. CERUTTI, J. RISTIĆ, S. FERNÁNDEZ-GARRIDO, M.A. SÁNCHEZ-GARCIA, J. GRANDAL, E. CALLEJA, A. TRAMPERT, U. JAHN "Inelastic light scattering spectroscopy of semiconductor nitride nanocolumns. Physica Status Solidi (b), 244, 2838-2846 (2007) ISSN: 0370-1972
  • [2007] J.M. CALLEJA, S. LAZIC, J. SANCHEZ-PÁRAMO, F. AGULLÓ-RUEDA, L. CERUTTI, J. RISTIC, S. FERNÁNDEZ-GARRIDO, M.A. SÁNCHEZ-GARCIA, J. GRANDAL, E. CALLEJA, A. TRAMPERT, U. JAHN "Inelastic light scattering spectroscopy of semiconductor nitride nanocolumns. Physica Status Solidi (b), 244, 2838-2846 (2007) ISSN: 0370-1972
  • [2007] M. NIEBELSCHÜTZ, V. CIMALLA, O. AMBACHER, T. MACHLEIDT, K.H. FRANKE, J. RISTIC, J. GRANDAL, M.A. SÁNCHEZ-GARCÍA, E. CALLEJA "Electrical characterization of Group III-Nitride nanocolumns with Scanning Force Microscopy" Modern Research and Educational Topics in Microscopy, Nº3, Eds. A. Méndez-Vilas, J. Díaz. Formatex, 560-567 (2007) ISSN: 0370-1972
  • [2007] S. LAZIĆ, E. GALLARDO, J.M. CALLEJA, F. AGULLO-RUEDA, J. GRANDAL, M.A. SANCHEZ-GARCIA, E. CALLEJA, E. LUNA, A. TRAMPERT "Phonon-plasmon coupling in electron surface accumulation layers in InN nanocolumns" Physical Review B, 76, 205319-205321 (2007) ISSN: 1098-0121
  • [2007] S. LAZIĆ, E. GALLARDO, J.M. CALLEJA, F. AGULLO-RUEDA, M.A. SANCHEZ-GARCIA, J. GRANDAL, E. CALLEJA, A. TRAMPERT "Coupled longitudinal optical phonon-plasmon modes in InN nanocolumns" AIP Conference Proceedings 893, 287 (2007) ISSN: 1077-3118
  • [2007] S. LAZIC, E. GALLARDO, J.M. CALLEJA, F. AGULLO-RUEDA, J. GRANDAL, M.A. SANCHEZ-GARCIA, E. CALLEJA, E. LUNA, A. TRAMPERT "Phonon-plasmon coupling in electron surface accumulation layers in InN nanocolumns" Physical Review B, 76, 205319-205321 (2007) ISSN: 1098-0121
  • [2007] S. LAZIC, E. GALLARDO, J.M. CALLEJA, F. AGULLO-RUEDA, M.A. SANCHEZ-GARCIA, J. GRANDAL, E. CALLEJA, A. TRAMPERT "Coupled longitudinal optical phonon-plasmon modes in InN nanocolumns" AIP Conference Proceedings 893, 287 (2007) ISSN: 1077-3118
  • [2007] S. VALDUEZA-FELIP, F.B. NARANJO, M. GONZÁLEZ-HERRÁEZ, H. FERNÁNDEZ, J. SOLIS, S. FERNÁNDEZ, F. GUILLOT, E. MONROY, J. GRANDAL, M.A. SÁNCHEZ-GARCÍA "Novel nitride - based materials for nonlinear optical signal processing applications at 1.5 µm"roc. IEEE Inter. Symposium on Intelligent Signal Processing WISP 2007 ISSN: 1553-572X
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• Capítulos de libros
  • [2017] Selective Area Growth of InGaN/GaN Nanocolumnar Heterostructures by Plasma Assisted Molecular Beam Epitaxy
  • [2014] Selective area growth of GaN nanowires by plasma-assisted molecular beam epitaxy
• Conferencias invitadas en congresos
  • [2017] Comparative study of InGaN layers for photovoltaic applications grown by PA-MBE on Si(111) using different buffer layers and growth conditions
  • [2015] Morphology and optical properties of ordered GaN and InGaN nanocolumns grown on non-polar and semipolar orientations
  • [2015] Novel optoelectronics devices
  • [2015] Selective Area Growth of InGaN/GaN Nanocolumnar structures for Classical and Quantum Light Sources
  • [2014] Advances on MBE Selective Area Growth of III-Nitride nanostructures: from nanoLEDs to pseudo substrates
  • [2013] Selective Area Growth of III-N Nanostructrures for Optoelectronic Applications
  • [2012] Influence of substrate type and orientation on the morphology and optical properties of selective area growth of GaN and InGaN nanocolumns
  • [2011] MBE growth and characterization of InGaN-based films and nanocolumns on Silicon substrates and GaN templates
  • [2011] MBE growth and characterization of InGaN-based films and nanocolumns on Silicon substrates and GaN templates
  • [2011] Surface-related optical properties of GaN and InGaN nanocolumns
  • [2011] Surface-related optical properties of GaN and InGaN nanocolumns
  • [2011] Understanding the Selective Area Nucleation and Growth of GaN nanocolumns by MBE using Ti nanomasks
  • [2010] E. CALLEJA, A. BENGOECHEA-ENCABO, J. GRANDAL, S. FERNÁNDEZ, J. RISTIC, M.A. SANCHEZ-GARCÍA, F. BARBAGINI, P. LEFEBVRE, J.M. CALLEJA, E. GALLARDO, E.LUNA, A. TRAMPERT, U.JAHN. "Spontaneous and ordered growth of III-N nanocolumns by MBE: growth mechanisms and applications to Optoelectronic Devices". International Workshop on Nitride Semiconductors (IWNS 2010) Tampa, Florida (USA) 2010
  • [2008] Growth and characterization of Nitrides-based (GaN, AlN, InN) nanostructures European Materials Research Society Meeting (E-MRS) 2008 Symposium G (Wide band gap semiconductor nanostructures for optoelectronic applications) Estrasburgo (Francia), 2008
  • [2008] Growth and characterization of Nitrides-based (GaN, AlN, InN) nanostructures Mini-Symposium on Physics and Applications of InN and InGaN Semiconductor Materials The Rank Prize Funds Grasmere (Inglaterra), 2008
  • [2008] MBE growth and characterization of InN-based layers and nanostructures Workshop on Frontier Photonic and Electronic Materials and Devices Hakone, Kanagawa (Japón), 2008
  • [2007] M. A.Sánchez-García, J. Grandal, A. Bengoechea, D. López-Romero,E. Calleja, S. Lazic, J.M. Calleja, E. Luna, A. Trampert, M. Niebelschütz, V. Cimalla, O. Ambacher "MBE Growth And Characterization Of InN On Silicon Substrates" European Materials Research Society Meeting (E-MRS) 2007 Estrasburgo (Francia) 28 de mayo al 1 Junio de 2007
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• Cursos, seminarios y tutoriales
  • [2019] Evolución de la electrónica y su relación con los minerales.
  • [2015] Hydride VPE for current III-V and nitride semiconductor compound issues
  • [2015] Crystallographic Polarity in Selective-Area Gallium Nitride Nanowire Growth: Which End Is Up?
  • [2015] Self assembled and ordered group III nitride nanocolumnar structures for light emitting applications
  • [2014] Alternativas para el graduado del GITST. Posibilidades de investigación en un centro de investigación (ISOM-UPM)
  • [2012] Prof. Magnus Willander. Department of Science and Technology, Linkoping University, Sweden. "Nanostructures and their Applications"
  • [2012] Ana Bengoechea Encabo.- "Crecimiento, fabricación y caracterización de heteroestructuras y nanocolumnas ordenadas basadas en nitruros del grupo III para aplicaciones sensoras"
  • [2012] Dr C. J. B. Ford . Cavendish Laboratory, University of Cambridge, UK." Novel designs for quantum computers using moving quantum dots"
  • [2012] Javier Rodríguez Madrid. ISOM-DIE-UPM. High precision pressure sensors based on SAW devices fabricated on diamond substrates
  • [2012] Miguel Romera Rabasa.-"Transporte Dependiente de Espín en Estructuras de Magnetorresistencia Gigante con Capas Delgadas de Gadolinio"
  • [2012] Prof. Stefano Sanguinetti. Dipartimento di Scienza dei Materiali, Universitat di Milano Bicocca, Italy. "Semiconductor Quantum Nanostructures by Droplet Epitaxy"
  • [2012] Profesor Enrique Calleja. Director del ISOM. "Generación de luz blanca eficiente con nanoestructuras semiconductoras"
  • [2012] Profesor ponente: Adam Urbanczyk. COBRA Research Institute, Eindhoven University of Technology. "Epitaxial metal nanocrystal-semiconductor quantum dot plasmonic nanostructures"
  • [2012] Zarko Gacevic.- "Constituent Blocks of III-Nitride Microcavities Grown by Molecular Beam Epitaxy"
  • [2011] Magnetic Hall sensors based on III-V heterostructures. Prof. Sylvie Contreras
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• Estancias y sabáticos recogidos en programas oficiales
  • [2018] Estancia de Investigación.- D. Kosuke Iwanaga.- Japan
  • [2018] Estancia de Investigación.- D. Toshihiro Takagi.-Toyohashi University of Techno
  • [2017] Estancia por colaboración investigadora de Doña Alekseenko Aleksandra Pavlovna.St. Petersburg Politechnic University, Faculty/Department IPhNT, Russia, Saint Petersburg.
  • [2017] Estancia por colaboración investigadora de Doña Dudina Alina .St. Petersburg Politechnic University, Faculty/Department IPhNT, Russia, Saint Petersburg.
  • [2017] Estancia por colaboración investigadora de Doña Elina Nepomniashchaia.St. Petersburg Politechnic University, Faculty/Department IPhNT, Russia, Saint Petersburg.
  • [2008] ESTANCIA ANA BENGOECHEA ENCABO: Walter Schottky Institute, en Munich.
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• Otras Publicaciones
  • [2019] Delegación de la Universidad Federal del Sur (Rostov del Don, Rusia), visita la ETSIT-UPM
  • [2019] Visita al ISOM Universidad Purdue, EEUU
  • [2018] La Noche Europea de los Investigadores se celebró el pasado viernes 28 de septiembre en la ETSIT-UPM y fue todo un éxito de participación y actividades. Esta iniciativa, enmarcada en Horizonte 2020, pretende acercar la investigación y los investigadores a todos los públicos. En el ISOM el Experimento de Invisibilidad fue una de las atracciones con más expectación: Ha aparecido dos veces en el programa de televisión El Hormiguero. También se visitaron los laboratorios del ISOM.
  • [2014] Nobel de física para los inventores de los LEDs de luz azul y blanca
  • [2013] Directorio de entidades y organizaciones con capacidades NANO, en el que se ha integrado el ISOM recientemente. ver enlace para descargar SPANISH NANOTECHNOLOGY COMMUNITY Directory 2013 pdf.
  • [2013] El ISOM forma parte de la Plataforma Tecnológica NANOfutures donde se conectan entidades y organizaciones con capacidades NANO
  • [2012] Noticia divulgada por Euroresidentes: "El Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) de la Universidad Politécnica de Madrid reconocido como Centro Internacional de Nanociencia y de Nanotecnología"
  • [2012] Visita guiada a nuestras Instalaciones con motivo de la XII SEMANA DE LA CIENCIA 2012, mi+d. Hora: 10.00 horas a 14.00 horas. Y el Lunes 12 de noviembre 2012 de 16.00 horas a 18.00 horas.
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• Otros méritos
  • [2016] Subdirector del ISOM (2016-)
  • [2016] Visita Guiada a Grupo de Alumnos de ETSIT-UPM, en la Jornada de Puertas Abiertas 2016
  • [2016] Visita guiada a representación de la Nanjing University of Posts & Telecommunications de China. Visita organizada por el Vicerrectorado de Relaciones Internacionales UPM y la Subdirección de Relaciones Internacionales de la ETSIT-UPM
  • [2016] Visita guiada a representación de la delegación de la University of Technology Sidney (Australia)
  • [2015] Secretario del ISOM.- Dr. Miguel Ángel Sánchez-García
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• Patentes
  • [2019] Light-emitting diode chip
  • [2019] Non-polar III-Nitride binary and ternary materials, method for obtaining thereof and uses
  • [2015] Temperature-Stable All-InGaN White Nanorod LEDs
  • [2012] Light-emitting diode chip. E2011,0717 DE X /3265/2011E23319DE
  • [2012] Light-emitting diode chip. E2011,0717 DE X /3265/2011E23319DE
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• Ponencia en Congresos
  • [2018] Nanoscale Imaging of Individual AlN/GaN/AlN Quantum Disk embedded in GaN Nanowires
  • [2018] Selective area growth of GaN nanocolumns with extremely low photoluminescence linewidth of <0.6 meV
  • [2016] Comparative Study of InGaN Layers Grown by PA-MBE on Si(111) Using Different Buffer Layers and Growth Conditions
  • [2015] Direct imaging of single InGaN/GaN core-shell microrods using nano-scale Scanning Transmission Electron Microscopy Cathodoluminescence
  • [2015] Selective Area Growth of III- Nitride Nanorods on polar, semi-polar and non-polar orientations: Device applications
  • [2014] XRD analysis of InGaN uniform layers grown on Si (111) without any buffer layers and on Sapphire
  • [2013] AFM electrical characterization of graphene nano LEDs
  • [2013] Coalescence of selective area growth GaN by MBE, for high quality polar, non polar and semi polar templates
  • [2013] Growth and characterization of ordered In(Ga)N/GaN nanocolumnar structures on Si (111) substrates with In contents between 0 and 100%
  • [2013] Improvement of Radar Capabilities by Reconfigurable Digital Signal Processing
  • [2013] Localized emission from the apex of GaN/(In,Ga)N/GaN
  • [2013] MBE selective area growth of polar, non-polar and semi-polar GaN and InGaN/GaN nanostructures
  • [2013] Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on Si(111): from ultraviolet to infrared emission
  • [2013] Selective area growth of In(Ga)N/GaN nanocolumns on silicon substrates
  • [2013] Selective area growth of InGaN/GaN nanostructures for green and white light emission
  • [2013] Selective area growth of polar, non-polar and semi-polar GaN and InGaN/GaN nanostructures
  • [2012] Electrical characterization of single GaN/InGaN nanorods grown by selective-area MBE
  • [2012] Graphene Electrodes For Nano-LEDs
  • [2012] Growth and characterization of ordered InGaN/GaN nanocolumnar structures on GaN/sapphire and Si (111) substrates
  • [2012] Influence of substrate orientation on the morphology and optical properties of selective area growth GaN nanocolumns and InGaN quantum disks
  • [2012] Investigation of Al1xInxN barrier ISFET structures with GaN capping on silicon substrates for pH detection
  • [2012] NanoLEDs with graphene electrode
  • [2012] Selective area growth of GaN/InGaN nanocolumnar heterostructures on polar, semipolar and non-polar substrates
  • [2011] Control of the morphology on selective area growth of GaN nanocolumns by rf-plasma-assisted
  • [2011] E-beam nanopatterning for the selective area growth of III-V nitride nanorods
  • [2011] Efficient phosphor-free, white light emission from ordered
  • [2011] Electrochemical capacitance voltage profiling of transition from surface electron depletion to accumulation with increasing In-content in InGaN alloys
  • [2011] Emission control of InGaN nanocolumns with growth temperature
  • [2011] Evidence of charge carrier number fluctuations by low frequency noise measurements in MBE grown Indium Nitride layers
  • [2011] Evidence of charge carrier number fluctuations in InN thin films?
  • [2011] Evidence of charge carrier number fluctuations in InN thin films?
  • [2011] Fabrication of GaN nanorods by focused ion beam
  • [2011] InN-based MIS rectification device
  • [2011] InN/GaN heterojunction electrical behavior
  • [2011] Plasma-assisted MBE growth of III-N nanorods: applications to optoelectronic devices and photovoltaics
  • [2011] Selective area growth of GaN nanocolumns by rf-plasma-assisted MBE at low temperature and under nitrogen-rich conditions
  • [2011] Substrate nanopatterning by e-beam lithography to growth ordered arrays of III-nitride nanodetectors, white light emitters, and solar cells, Marie Curie Researchers Symposium
  • [2011] Surface-related optical properties of GaN and InGaN nanocolumns
  • [2011] The microstructure of InN/InGaN heterostructures and quantum wells grown by MBE
  • [2011] Understanding the selective area nucleation and growth of GaN Nanocolumns by MBE using Ti nanomasks
  • [2011] X-ray diffraction and transmission electron microscopy analysis of threading dislocations in MBE grown InN layers
  • [2010] A. BENGOECHEA, J. GRANDAL, S. FERNANDEZ-GARRIDO, M.A. SANCHEZ-GARCIA, F. BARBAGINI, P. LEFEBVRE, E. CALLEJA, E. LUNA, A. TRAMPERT. "Selective area growth of GaN nanocolumns by rf-plasma-assisted MBE". 16th International MBE Conference Berlin (Germany) 2010
  • [2010] A. VILALTA-CLEMENTE, G. R. MUTTA, M. MORALES, J.L. DOUALAN, J. GRANDAL, M. A. SÁNCHEZ-GARCÍA, F. CALLE, E. VALCHEVA, K. KIRILOV, P. RUTERANA "Structural Study of InN layer with compressive strain" E-MRS, Symposium G: Physics and applications of novel gain materials based on III-V-N compounds Strasbourg (France), 2010
  • [2010] P. LEFEBVRE, S. ALBERT, J. RISTIC, M.-A. SÁNCHEZ-GARCÍA, E. CALLEJA. "Carrier localization and surface effects in InGaN nanocolumns grown by plasma-assisted molecular beam epitaxy" Int. Workshop on Nitride Semiconductors - IWN 2010 Tampa (USA), 2010
  • [2010] S. ALBERT, J. GRANDAL, M.A. SANCHEZ-GARCIA, P. LEFEBVRE, J. RISTIC, E. CALLEJA, A. VILALTA-CLEMENTE, B. LACROIX, P. RUTERANA, E. LUNA, U. JAHN, A. TRAMPERT. "MBE growth and characterization of InN/InGaN thin films and nanostructures on GaN templates and Si(111) substrates" 16th International MBE Conference Berlin (Germany) 2010
  • [2009] A. REDONDO-CUBERO, J. PEREIRO, J. GRANDAL, K. LORENZ, N. FRANCO, R. GAGO, E. MUÑOZ, M. A. SÁNCHEZ-GARCÍA, E. CALLEJA, E. ALVES "Structural study of the epitaxial growth in InGaN/GaN heterostructures by ion beam analysis" 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2009) Málaga (Spain), 2009.
  • [2009] J. EROLES, A. BENGOECHEA, M.A. SANCHEZ-GARCIA, F. CALLE "Characterization of a pH sensor based on an AlGaN/GaN transistor" 7th Spanish Conference on Electronic Devices. CDE-09. IEEE, Electron Devices, 258-261, ISBN: 978-1-4244-2838-0 Santiado de Compostela (Spain), 2009
  • [2009] J. GRANDAL, A. BENGOECHEA, M. A. SÁNCHEZ-GARCÍA, E. CALLEJA, E. LUNA, A. TRAMPERT, E. GALLARDO, J.M. CALLEJA "InN/InGaN multiple quantum wells emitting at 1.5 µm" 15th European Workshop on Molecular Beam Epitaxy Zakopane (Poland), 2009
  • [2009] J.M. ROUTOURE, B. GUILLET, L. MÉCHIN, A. VILALTA-CLEMENTE, J. GRANDAL, M. A. SÁNCHEZ-GARCÍA, S. MARTÍN, F. CALLE, P. RUTERANA "Low frequency noise measurements in InN films" 2009 E-MRS Fall Meeting, Symposium on Indium Nitride. Warsaw (Poland), 2009
  • [2008] Characterization of InN nanocolumns grown by PA-MBE on a-plane GaN/r-plane Al2O3 templates International Workshop on Nitride Semiconductor 2008 Montreux, (Suiza), 2008
  • [2008] Growth of InN nanocolumns on a-plane GaN templates 15th International Conference on Molecular Beam Epitaxy Vancouver (Canada), 2008
  • [2008] Growth of InN on Silicon substrates Mini-Symposium on Physics and Applications of InN and InGaN Semiconductor Materials The Rank Prize Funds Grasmere (Inglaterra), 2008
  • [2008] Investigation and Manipulation of Space Charged Regions in GaN and InN Nanocolumns International Conference on Electronic Materials Sydney, (Australia), 2008
  • [2008] Photoemission and Optical Studies of Electron Accumulation at InN and In-rich InGaN Surfaces
  • [2007] E. Sillero, A. Bengoechea, M. A. Sánchez-García, F. Calle "III-Nitride MEMS grown by MBE on Si(111): Fabrication and mechanical characterisation" 16th European Workshop on Heterostructures Technology Frejus (Francia) 2 al 5 de septiembre de 2007
  • [2007] E. Sillero, D. López-Romero, A. Bengoechea, M. A. Sánchez-García, F. Calle "Fabrication and stress relief modelling of GaN based MEMS test structures grown by MBE on Si(111)" 7th International Conference on Nitride Semiconductors (ICNS07) Las Vegas (USA) 16 al 21 de septiembre de 2007
  • [2007] J. Grandal, A.Bengoechea, M.A. Sánchez-García, E. Calleja, E. Luna, A. Trampert, M. Niebelschütz, V. Cimalla "Structural Characterization Of Inn-Based Layers Grown On Si (111) And Si (001) Substrates By Mbe" 14th European Molecular Beam Epitaxy Workshop 2007 Sierra Nevada, Granada (ESPAÑA) 5 al 7 de marzo de 2007
  • [2007] J. Grandal, M.A. Sánchez-García, E. Calleja, S. Lazic, J.M. Calleja, E. Luna, A. Trampert "Characterization Of Inn Nanocolumns Grown On Si (001) Substrates By Plasma Assisted Molecular Beam Epitaxy"European Material Research Society Spring Conference 2007 Estrasbourg (Francia) 28 de mayo al 1 Junio de 2007
  • [2007] J. Grandal, M.A. Sánchez-García, E. Calleja, S. Lazic, J.M. Calleja, E. Luna, A. Trampert "Structural and optical characterization of Inn/Ingan multiple quantum wells grown by plasma assisted-MBE" 7th International Conference on Nitride Semiconductors (ICNS07) Las Vegas (NV), USA 16 al 21 de septiembre de 2007
  • [2007] J. Grandal, M.A. Sánchez-García, E. Calleja, S. Lazic, J.M. Calleja, E. Luna, A. Trampert "Characterization Of InN Nanocolumns Grown On Si (001) Substrates By Plasma Assisted Molecular Beam Epitaxy" European Material Research Society Spring Conference 2007 Estrasbourg (Francia) 28 de mayo al 1 Junio de 2007
  • [2007] M. A.Sánchez-García, J. Grandal, A. Bengoechea, D. López-Romero,E. Calleja, S. Lazic, J.M. Calleja, E. Luna, A. Trampert, M. Niebelschütz, V. Cimalla, O. Ambacher "MBE Growth And Characterization Of Inn On Silicon Substrates"European Materials Research Society Meeting (E-MRS) 2007 Estrasburgo (Francia) 28 de mayo al 1 Junio de 2007
  • [2007] M. Niebelschütz.V. Cimalla, O. Ambacher, T. Machleidt, J. Ristic, J. Grandal, M. A. Sánchez-García. E. Calleja "Space Charged Region In Gan And Inn Nanocolumns Investigated By Atomic Force Microscopy" 7th International Conference on Nitride Semiconductors 2007 Las Vegas (NV), USA 16 al 21 de septiembre de 2007
  • [2007] S. Lazić, E. Gallardo, J. M. Calleja, F. Agulló-Rueda, J. Grandal, M. A. Sánchez-García, E. Calleja, A. Trampert, E. Luna ¿Raman Scattering By Coupled Plasmon-Lo Phonons In Inn Nanocolumns¿ 7th International Conference on Nitride Semiconductors (ICNS07) Las Vegas (NV), USA 16 al 21 de septiembre de 2007
  • [2007] S. Lazić, E. Gallardo, J.M. Calleja, F. Agulló-Rueda, J. Grandal, M.A. Sánchez-Garcia, E. Calleja "Raman Scattering By Longitudinal Optical Phonons In Inn Nanocolumns Grown On Si(111) And Si(001) Substrates" 13th International Conference on Modulated Semiconductor Structures (MSS-13) Génova (Italia) 15 al 20 de julio de 2007
  • [2007] S. Lazić, J.M. Calleja, F.Agulló-Rueda, M.A. Sánchez-García, J. Grandal, E. Calleja, A. Trampert "Inelastic light scattering by the longitudinal optical phonons in InN nanocolumns and compact layers" Physics of Light-Matter Coupling in nanostructures La Habana (Cuba) 12 al 17 de abril de 2007
  • [2007] S. Lazic, E. Gallardo, J. M. Calleja, F. Agulló-Rueda, J. Grandal, M. A. Sánchez-García, E. Calleja, A. Trampert, E. Luna "Raman Scattering By Coupled Plasmon-Lo Phonons In Inn Nanocolumns" 7th International Conference on Nitride Semiconductors (ICNS07) Las Vegas (NV), USA 16 al 21 de septiembre de 2007
  • [2007] S. Lazic, E. Gallardo, J.M. Calleja, F. Agulló-Rueda, J. Grandal, M.A. Sánchez-Garcia, E. Calleja "Raman Scattering By Longitudinal Optical Phonons In Inn Nanocolumns Grown On Si(111) And Si(001) Substrates" 13th International Conference on Modulated Semiconductor Structures (MSS-13) Génova (Italia) 15 al 20 de julio de 2007
  • [2007] S. Lazic, J.M. Calleja, F.Agulló-Rueda, M.A. Sánchez-García, J. Grandal, E. Calleja, A. Trampert "Inelastic light scattering by the longitudinal optical phonons in InN nanocolumns and compact layers" Physics of Light-Matter Coupling in nanostructures La Habana (Cuba) 12 al 17 de abril de 2007
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• Proyectos de I+D+i
  • [2019] GANQUBIT: Nanohilos basados en GaN para sistemas de información cuántica y circuitos digitales
  • [2019] Nanohilos basados en GaN para sistemas de información cuántica y circuitos electrónicos digitales (GaNQUBIT)
  • [2015] FESEM: Extension de medida de catodoluminiscencia (cl) al rango infrarojo en microscopio de barrido electrónico FESEM
  • [2015] FESEM: Extensión de medida de catodoluminiscencia(CL) al rango infrarrojo en microcospio de barrido electrónico FESEM
  • [2015] MBE: ADECUACIÓN DE UN REACTOR DE EPITAXIA DE HACES MOLECULARES (MBE) PARA EL CRECIMIENTO EPITAXIAL DE NANOESTRUCTURAS SEMICONDUCTORAS
  • [2014] CELULAS SOLARES DE INGAN MEJORADAS CON PLASMONES SUPERFICIALES....
  • [2013] CELULAS SOLARES DE INGAN MEJORADAS CON PLASMONES SUPERFICIALES....
  • [2013] HIGH QUALITY MATERIAL AN INTRINSIC PROPERTIES OF INN AND INDIUM RICH NITRIDE ALLOYS (THE RAINBOW ITN) 213238
  • [2012] CELULAS SOLARES DE INGAN MEJORADAS CON PLASMONES SUPERFICIALES....
  • [2012] CELULAS SOLARES DE INGAN MEJORADAS CON PLASMONES SUPERFICIALES....
  • [2012] GECCO: 3D GaN for High Efficiency Solid State Lighting
  • [2011] CELULAS SOLARES DE INGAN MEJORADAS CON PLASMONES SUPERFICIALES....
  • [2011] RAINBOW SECOND TRAINING WORKSHOP
  • [2011] RAINBOW: High quality and intrinsic Properties of InN and indium rich Nitride Alloys
  • [2011] SNB09: Substrate nanopatterning by e-beam lithography to growth ordered arrays of III-Nitride nanodetectors: application to IR detectors, emitters, and new Solar Cells
  • [2010] HIGH QUALITY MATERIAL AN INTRINSIC PROPERTIES OF INN AND INDIUM RICH NITRIDE ALLOYS (THE RAINBOW ITN) 213238
  • [2010] HIGH QUALITY MATERIAL AN INTRINSIC PROPERTIES OF INN AND INDIUM RICH NITRIDE ALLOYS (THE RAINBOW ITN) 213238
  • [2010] RAINBOW SECOND TRAINING WORKSHOP
  • [2009] CRECIMIENTO Y CARACTERIZACION DE HETEROESTRUCTURAS DE NITRUTOS-III
  • [2009] FOURTH INTERNATIONAL SYMPOSIUM ON BLUE LASER AND LIGHT EMITTING DIODES ISBLLED 2002
  • [2009] HIGH QUALITY MATERIAL AN INTRINSIC PROPERTIES OF INN AND INDIUM RICH NITRIDE ALLOYS (THE RAINBOW ITN) 213238
  • [2009] SISTEMA DE CARACTERIZACION OPTICA AVANZADA MULTIFUNCIONAL
  • [2009] bio sensores quimicos avanzados para medida in situ de la calidad de aguas..
  • [2008] (Bio)sensores químicos avanzados para medida in-situ de la calidad de aguas basados en elementos específicos de reconocimiento y lectura multifuncional integrada
  • [2008] 14th European Molecular Beam Epìtaxy" Acción complementaria ACC-030000-2007-3
  • [2008] 14th European Molecular Beam Epìtaxy. Acción complementaria TEC2007-30322-E/
  • [2008] Ayudas financieras para la mejora de las infraestructuras científicas y tecnológicas singulares y para el acceso a las mismas
  • [2008] Bio)sensores químicos avanzados para medida in-situ de la calidad de aguas basados en elementos específicos de reconocimiento y lectura multifuncional integrada
  • [2008] Desarrollo de Micro y Nanocavidades incluyendo regiones activas de Puntos Cuánticos de Nitruros-III: Aplicaciones a emisores de luz en azul y UV (QUADONIC)
  • [2008] Desarrollo matriz de detectores multiespectral en el infrarrojo 3-5
  • [2008] High quality Material and intrinsic Properties of InN and indium rich Nitride Alloys-(The Rainbow ITN)
  • [2008] I+D de Micro y Nanosistemas basados en Nitruros III-V para comunicaciones y sensores MINANI
  • [2008] Programa de infraestructura y gestión de calidad de la red de laboratorios incluido en el Contrato-Programa de I+D entre la CAM y la UPM
  • [2008] Programa de infraestructura y gestión de calidad de la red de laboratorios incluido en el Contrato-Programa de I+D entre la CAM y la UPM
  • [2007] "(Bio)sensores químicos avanzados para medida in-situ de la calidad de aguas basados en elementos específicos de reconocimiento y lectura "multifuncional integrada"
  • [2007] "(Bio)sensores químicos avanzados para medida in-situ de la calidad de aguas basados en elementos específicos de reconocimiento y lectura (multifuncional integrada)"
  • [2007] "14th European Workshop on MBE, Sierra Nevada, Granada, ESPAÑA" Min. Educación y Ciencia, ACC-030000-2007-3 (2007)
  • [2007] "14th European Workshop on MBE, Sierra Nevada, Granada, ESPAÑA" Min. Educación y Ciencia, ACC-030000-2007-3(2007)
  • [2007] "14th European Workshop on MBE, Sierra Nevada, Granada, ESPAÑA" Ministerio de Educación y Ciencia.TEC2007-30322-E/ (2007)
  • [2007] "14th European Workshop on MBE, Sierra Nevada, Granada, ESPAÑA" Ministerio de Educación y Ciencia.TEC2007-30322-E/ (2007)
  • [2007] "14th European Workshop on MBE, Sierra Nevada, Granada, ESPAÑA.ISOM-UPM
  • [2007] "Ayudas para apoyar las líneas de I+D en el programa de creación y consolidación de grupos de investigación de la Universidad Politécnica de Madrid. CAM, Referencia: CCG07-UPM/000-3220"
  • [2007] "Crecimiento y caracterización de heteroestructuras de nitruros-III e integración con materiales magnéticos para su aplicación de dispositivos híbridos magnético-semiconductor" TEC2004-05698-C02-01/MIC
  • [2007] "Desarrollo de Dispositivos Emisores y Detectores en el rango Ultravioleta para Aplicaciones en Comunicaciones, Generación de Luz Blanca, Detección de Contaminación y Bio-Fotónica". Min. Educación y Ciencia. Referencia: MAT2004-02875
  • [2007] "Desarrollo de Dispositivos Emisores y Detectores en el rango Ultravioleta para Aplicaciones en Comunicaciones, Generación de Luz Blanca, Detección de Contaminación y Bio-Fotónica". Min. Educación y Ciencia. Referencia: MAT2004-02875. ADICIONAL
  • [2007] "International Workshop 2007 on MBE". Sierra Nevada, Granada, España. ISOM-UPM
  • [2007] "Microscopio de barrido de capacidad para caracterización de nanoestructuras". Min. Educación y Ciencia, UNPM06-33-037 (2007)
  • [2007] "Nanoestructuras de Semiconductores como Componentes para la Información Cuántica (NANIC)" Min. Educación y Ciencia, Acción Estratégica en Nanotecnología. NAN2004-09109-C04-02. (2005-2008).
  • [2007] "Nanoestructuras de semiconductores como componentes para la información cuántica"(NANOCOMIC)
  • [2007] "Sistema de caracterización óptica avanzada multifuncional"
  • [2007] Crecimiento y caracterización de heteroestructuras de nitruros-III e integración con materiales magnéticos para su aplicación de dispositivos híbridos magnético-semiconductor" TEC2004-05698-C02-01/MIC, ADICIONAL
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• Responsabilidades
  • [2018] Dr. Miguel Ángel Sánchez-García. Subdirector del ISOM, desde 2016 en adelante
  • [2017] Subdirector del Instituto de Sistemas Optoelectronicos y Microtecnologia, ISOM. 2016 en adelante
  • [2016] Responsable Sala de Cortadoras
  • [2016] Responsables sala de Epitaxia MBE I y II
  • [2013] Secretaría del ISOM.- Mayo de 2012 en adelante
  • [2007] Miguel Ángel Sánchez-García, Miembro del comité de organización del 14th Euro-MBE Workshop, Granada, 2007.
  • [2007] Miguel Ángel Sánchez-García, Responsable del equipo de ataque seco por iones reactivos (RIE, Reactive Ion Etching) Instituto de Sistemas Optoelectrónicos y Microtecnología. UPM (Enero 2001- Enero 2007)
  • [2007] Miguel Ángel Sánchez-García, Responsable del equipo de fabricación de materiales aislantes por CVD (Chemical Vapor Deposition) Instituto de Sistemas Optoelectrónicos y Microtecnología. UPM (Enero 2001- Enero 2007)
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• Tesis Doctorales
  • [2017] Epitaxial Growth and Characterization of InGaN layers for photovoltaic applications
  • [2015] Self assembled and ordered group III nitride nanocolumnar structures for light emitting applications
  • [2012] Crecimiento, fabricación y caracterización de heteroestructuras y nanocolumnas ordenadas basadas en nitruros del grupo III para aplicaciones sensoras
  • [2009] JAVIER GRANDAL QUINTANA "Crecimiento y caracterización de nitruro de indio por epitaxia de haces moleculares para aplicaciones en el infrarrojo cercano"
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